arXiv subjects

M. Sammon

Publications and source records attributed to M. Sammon.

14 recordsLinked to original sources

arXiv2025

Selective Shuttling of Electrons on Helium Using a CMOS Control Platform

Electrons bound to the surface of liquid helium are an emerging quantum computing platform, offering the potential for highly mobile spin qubits that can be manipulated using CMOS-fabricated devices. Here, as a step toward realizing this technology, we demonstrate selective two-dimensional shuttling of electrons across a helium film condensed on the surface of a CMOS control chip. The electrons are moved in packets containing, on average, several tens down to single electrons. We perform CCD-style electron shuttling in any of 128 transport microchannels, each of which links electron storage zones and sensing zones in the 2D plane. Shuttling sequences can be repeated at least 10$^9$ times with no detectable electron loss. The device serves as a prototype quantum information processing platform that is readily scalable to control large monolithically integrated arrays of single electron spins.

cond-mat.mes-hall↗

arXiv2025

Strong coupling of a microwave photon to an electron on helium

Electrons bound to the surface of superfluid helium have been proposed for scalable charge and spin-based quantum computing. However single electron quantum measurement in this system has remained elusive. Here we use a hybrid circuit quantum electrodynamic (cQED) device that comprises a quantum dot and a high-impedance superconducting resonator to demonstrate, for the first time, strong coupling between the resonator microwave field and the motional quantum state of the electron. We find a coupling strength between the electron motion and a resonator photon of $g/2\pi=118$ MHz, exceeding both the electron motional state decoherence and the resonator loss. These experiments open new avenues for investigating light-matter interaction at the single electron level, and are a key step towards measurement and control of electrons on helium-based spin qubits.

quant-ph↗

arXiv2024

Sensing and Control of Single Trapped Electrons Above 1 Kelvin

Electrons trapped on the surface of cryogenic substrates (liquid helium, solid neon or hydrogen) are an emerging platform for quantum information processing made attractive by the inherent purity of the electron environment, the scalability of trapping devices and the predicted long lifetime of electron spin states. Here we demonstrate the spatial control and detection of single electrons above the surface of liquid helium at temperatures above 1 K. A superconducting coplanar waveguide resonator is used to read out the charge state of an electron trap defined by gate electrodes beneath the helium surface. Dispersive frequency shifts are observed as the trap is loaded with electrons, from several tens down to single electrons. These frequency shifts are in good agreement with our theoretical model that treats each electron as a classical oscillator coupled to the cavity field. This sensitive charge readout scheme can aid efforts to develop large-scale quantum processors that require the high cooling powers available in cryostats operating above 1 K.

quant-ph↗

arXiv2024

High-impedance resonators for strong coupling to an electron on helium

The in-plane motion of an electron on helium can couple to superconducting microwave resonators via electrical dipole coupling, offering a robust and rapid readout scheme. In previous efforts, microwave resonator designs for electrons on helium have lacked the coupling strength to reach the strong coupling regime, where coherent quantum effects outlast both electron and resonator decoherence rates. High-impedance superconducting microwave resonators offer a path to strong coupling, but integrating such resonators with electrons on helium remains an outstanding challenge. Here, we introduce a high-impedance resonator design compatible with strong coupling to electrons on helium. We fabricate and measure titanium nitride resonators with median internal quality factors of $3.9\times 10^5$ and average impedance of 2.5 k$\Omega$, promising a seven-fold increase in coupling strength compared with standard 50$\Omega$ resonators. Additionally, we develop a simplified resonator model from the capacitance matrix and sheet inductance that accurately predicts the mode frequencies, significantly simplifying the design process of future resonators for investigating quantum effects with electrons on helium.

quant-ph↗

arXiv2023

A Hermetic On-Cryostat Helium Source for Low Temperature Experiments

We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crimping tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as monitored via the frequency response of a planar superconducting resonator device sensitive to small amounts of liquid helium. This on-cryostat helium source negates the use of a filling tube between the cryogenic volumes and room temperature, thereby preventing unwanted effects such as such as temperature instabilities that arise from the thermomechanical motion of helium within the system. This helium source can be used in experiments investigating the properties of quantum fluids or to better thermalize quantum devices.

physics.ins-det↗

arXiv2021

Efficient domain wall motion in asymmetric magnetic tunnel junctions with vertical current flow

In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We show that as we increase the MTJ asymmetry, by considering dissimilar ferromagnetic contacts, a linear-in-voltage field-like torque behavior is accompanied by an enhancement in the domain wall displacement efficiency and a higher degree of bidirectional propagation. Our analysis is based on a combination of a quantum transport model and magnetization dynamics as described by the Landau-Lifshitz-Gilbert equation, along with comparison to the intrinsic characteristics of a benchmark in-plane current injection domain wall device.

cond-mat.mes-hall↗

arXiv2020

Isotropically conducting (hidden) quantum Hall stripe phases in a two-dimensional electron gas

Quantum Hall stripe (QHS) phases, predicted by the Hartree-Fock theory, are manifested in GaAs-based two-dimensional electron gases as giant resistance anisotropies. Here, we predict a ``hidden'' QHS phase which exhibits \emph{isotropic} resistivity whose value, determined by the density of states of QHS, is independent of the Landau index $N$ and is inversely proportional to the Drude conductivity at zero magnetic field. At high enough $N$, this phase yields to an Ando-Unemura-Coleridge-Zawadski-Sachrajda phase in which the resistivity is proportional to $1/N$ and to the ratio of quantum and transport lifetimes. Experimental observation of this border should allow one to find the quantum relaxation time.

cond-mat.mes-hall↗

arXiv2019

Giant violation of Wiedemann-Franz law in doping layers of modern AlGaAs heterostructures

We analyze the data of the recent paper Nature 559, 205 (2018) and show that it contains an observation of thermal and electric conductivities of the doping layers in GaAs/AlGaAs heterostructures which violates the Wiedemann-Franz law. Namely, the measured thermal conductivity of the doping layers is similar to that of a metal while the electrical conductivity is exponentially small. We find that these results may be related to the exciton contribution to thermal conductivity calculated in several recent theoretical works for metallic samples.

cond-mat.mes-hall↗

arXiv2019

Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers

We study a capacitor made of three monolayers of transition metal dichalcogenide (TMD) separated by hexagonal Boron Nitride (hBN). We assume that the structure is symmetric with respect to the central layer plane. The symmetry includes the contacts: if the central layer is contacted by the negative electrode, both external layers are contacted by the positive one. As a result a strong enough voltage $V$ induces electron-hole dipoles (indirect excitons) pointing towards one of the external layers. Antiparallel dipoles attract each other at large distances. Thus, the dipoles alternate in the central plane forming a 2D antiferroelectric with negative binding energy per dipole. The charging of a three-layer device is a first order transition, and we show that if $V_1$ is the critical voltage required to create a single electron-hole pair and charge this capacitor by $e$, the macroscopic charge $Q_c = eSn_c$ ($S$ is the device area) enters the three-layer capacitor at a smaller critical voltage $V_{c} < V_{1}$. In other words, the differential capacitance $C(V)$ is infinite at $V = V_{c}$. We also show that in a contact-less three-layer device, where the chemically different central layer has lower conduction and valence bands, optical excitation creates indirect excitons which attract each other, and therefore form antiferroelectric exciton droplets. Thus, the indirect exciton luminescence is red shifted compared to a two-layer device.

cond-mat.mes-hall↗

arXiv2018

Excess electron screening of remote donors and mobility in modern GaAs/AlGaAs herostructures

In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is located within a narrow GaAs layer, flanked by narrow AlAs layers which capture excess electrons from donors but leave each of them localized in a compact dipole atom with a donor. Still excess electrons can hop between host donors to minimize their Coulomb energy. As a result they screen the random potential of donors dramatically. We numerically model the pseudoground state of excess electrons at a fraction $f$ of filled donors and find both the mobility and the quantum mobility limited by scattering on remote donors as universal functions of $f$. We repeat our simulations for devices with additional disorder such as interface roughness of the doping layers, and find the quantum mobility is consistent with measured values. Thus, in order to increase the quantum mobility this additional disorder should be minimized.

cond-mat.mes-hall↗

arXiv2018

Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures

In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is located within a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. Nevertheless, excess electrons screen both the remote donors and background impurities. When the fraction of remote donors filled by excess electrons $f$ is small, the remote donor limited quantum mobility grows as $f^{3}$ and becomes larger than the background impurity limited one at a characteristic value $f_c$. We also calculate both the mobility and the quantum mobility limited by the screened background impurities with concentrations $N_1$ in Al$_x$Ga$_{1-x}$As and $N_2$ in GaAs, which allows one to estimate $N_1$ and $N_2$ from the measured mobilities. Taken together, our findings should help to identify avenues for further improvement of modern heterostructures.

cond-mat.mes-hall↗

arXiv2017

Roughness scattering induced insulator-metal-insulator transition in a quantum wire

We have theoretically investigated the influence of interface roughness scattering on the low temperature mobility of electrons in quantum wires when electrons fill one or many subbands. We find the Drude conductance of the wire with length $\mathcal{L}$ first increases with increasing linear concentration of electrons $\eta$ and then decreases at larger concentrations. For small radius $R$ of the wire with length $\mathcal{L}$ the peak of the conductance $G_{max}$ is below $e^2/h$ so that electrons are localized. The height of this peak grows as a large power of $R$, so that at large $R$ the conductance $G_{max}$ exceeds $e^2/h$ and a window of concentrations with delocalized states (which we call the metallic window) opens around the peak. Thus, we predict an insulator-metal-insulator transition with increasing concentration for large enough $R$. Furthermore, we show that the metallic domain can be sub-divided into three smaller domains: 1) single-subband ballistic conductor, 2) many-subband ballistic conductor 3) diffusive metal, and use our results to estimate the conductance in these domains. Finally we estimate the critical value of $R_c(\mathcal{L})$ at which the metallic window opens for a given length $\mathcal{L}$ and find it to be in reasonable agreement with experiment.

cond-mat.mes-hall↗

arXiv2016

Electron Accumulation Layer in Ultrastrong Magnetic Field

When a three-dimensional electron gas is subjected to a very strong magnetic field, it can reach a quasi-one-dimensional state in which all electrons occupy the lowest Landau level. This state is referred to as the extreme quantum limit (EQL) and has been studied in the physics of pulsars and bulk semiconductors. Here we present a theory of the EQL phase in electron accumulation layers created by an external electric field $E$ at the surface of a semiconductor with a large Bohr radius such as InSb, PbTe, SrTiO$_3$ (STO), and particularly in the LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure. The phase diagram of the electron gas in the plane of the magnetic field strength and the electron surface concentration is found for different orientations of the magnetic field. We find that in addition to the quasi-classical metallic phase (M), there is a metallic EQL phase, as well as an insulating Wigner crystal state (WC). Within the EQL phase, the Thomas-Fermi approximation is used to find the electron density and the electrostatic potential profiles of the accumulation layer. Additionally, the quantum capacitance for each phase is calculated as a tool for experimental study of these phase diagrams.

cond-mat.mes-hall↗

arXiv2015

Hopping Conduction via Ionic Liquid Induced Silicon Surface States

In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hopping between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hopping conductivity resembles that of well studied $\text{Na}^{+}$ implanted Si MOSFETs.

cond-mat.mes-hall↗