arXiv subjects

M. Shayegan

Publications and source records attributed to M. Shayegan.

At least 19 recordsLinked to original sources

arXiv2026

Engineering Quantum Criticality in the Integer Quantum Hall Regime through a Screening Layer

Disorder-induced localization of electrons and electron-electron interaction are among the most fundamental problems in condensed matter physics. In two-dimensional electron systems, extensive studies have led to the emergence of a scaling picture, characterized by a set of universal critical exponents that govern the transitions between the integer quantum Hall plateaus. From the temperature dependence of the plateau-to-plateau transitions, experiments primarily report k ~ 0.42, implying a dynamic exponent z = 1, consistent with a theoretical picture where electrons have a long-range (1/r) interaction. Theory also predicts that z = 2 for short-range electron interaction, but an experimental verification has remained elusive. Here, we directly probe the influence of Coulomb interaction on these transitions using a bilayer electron system confined to a GaAs double quantum well device. The two layers are in close proximity, with an interlayer distance approximately equal to the magnetic length at the relevant magnetic fields. By tuning the electron density in the top layer, we access both insulating and metallic phases of the electrons in this layer as a function of magnetic field, allowing in-situ control of the unscreened and screened interaction strengths in the bottom layer as it goes through its plateau-to-plateau transitions. In the unscreened case, we measure k ~ 0.42 consistent with the widely reported value. More importantly, when screening is introduced, k is reduced to ~ 0.22, implying z = 2. Our results provide direct experimental evidence for the role of electron-electron interaction in determining critical behavior in the quantum Hall regime, and demonstrate screening as a powerful tuning parameter for engineering quantum criticality.

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arXiv2025

Even-denominator fractional quantum Hall states with spontaneously broken rotational symmetry

The interplay between the fractional quantum Hall effect and nematicity is intriguing as it links emerging topological order and spontaneous symmetry breaking. Anisotropic fractional quantum Hall states (FQHSs) have indeed been reported in GaAs quantum wells but only in tilted magnetic fields, where the in-plane field explicitly breaks the rotational symmetry. Here we report the observation of FQHSs with highly anisotropic longitudinal resistances in purely perpendicular magnetic fields at even-denominator Landau level (LL) fillings {\nu} = 5/2 and 7/2 in ultrahigh-quality GaAs two-dimensional hole systems. The coexistence of FQHSs and spontaneous symmetry breaking at half fillings signals the emergence of nematic FQHSs which also likely harbor non-Abelian quasiparticle excitations. By gate tuning the hole density, we observe a phase transition from an anisotropic, developing FQHS to an isotropic composite fermion Fermi sea at {\nu} = 7/2. Our calculations suggest that the mixed orbital components in the partially occupied LL play a key role in the competition and interplay between topological and nematic orders.

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arXiv2025

Competing Many-Body Phases at Small Fillings in Ultrahigh-Quality GaAs 2D Hole Systems: Role of Landau Level Mixing

The fractional quantum Hall state (FQHS), an incompressible liquid state hosting anyonic excitations with fractional charge and statistics, represents a compelling many-body phase observed in clean two-dimensional (2D) carrier systems. The expected non-Abelian nature of the FQHSs at even-denominator Landau level (LL) fillings has particularly sparked considerable recent interest. At sufficiently small fillings, another exotic phase, namely a quantum Wigner crystal (WC) state, dominates. Here we report magneto-transport measurements in an ultrahigh-quality GaAs 2D \textit{hole} system where the large hole effective mass leads to a significant LL mixing (LLM) even at very high magnetic fields and affects the many-body states at very small fillings. We observe numerous developing FQHSs at both even- and odd-denominator fillings, deep in the insulating regime at $\nu \lesssim$ 1/3 where WC states dominate. The FQHSs we observe at odd-denominator fillings on the flanks of $\nu=$ 1/4 and 1/6 are consistent with the Abelian Jain sequence of four-flux and six-flux composite fermions, while the ones at even-denominator fillings $\nu=$ 1/4 and 1/6 are likely non-Abelian states emerging from the pairing of these quasiparticles induced by severe LLM. Our results demonstrate that the competition between the FQHSs and WC phases is close at very small fillings even in the presence of severe LLM. We also measure activation energies of WC states near $\nu=$ 1/6, and find that they are substantially larger than what has been reported for ultrahigh-quality GaAs 2D electrons. A moderate LLM is believed to lower the activation energy associated to the formation of WC intrinsic defects. The surprisingly large activation energy for our 2DHS with significant LLM is therefore puzzling, and may suggest a different type of intrinsic WC defect compared to that in 2D electrons.

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arXiv2025

Developing fractional quantum Hall states at even-denominator fillings 1/6 and 1/8

In the extreme quantum limit, when the Landau level filling factor $\nu<1$, the dominant electron-electron interaction in low-disorder two-dimensional electron systems leads to exotic many-body phases. The ground states at even-denominator $\nu=$ 1/2 and 1/4 are typically Fermi seas of composite fermions carrying two and four flux quanta, surrounded by the Jain fractional quantum Hall states (FQHSs) at odd-denominator fillings $\nu=p/(2p\pm1)$ and $\nu=p/(4p\pm1)$, where $p$ is an integer. For $\nu<$ 1/5, an insulating behavior, which is generally believed to signal the formation of a pinned Wigner crystal, is seen. Our experiments on ultrahigh-quality, dilute, GaAs two-dimensional electron systems reveal developing FQHSs at $\nu=p/(6p\pm1)$ and $\nu=p/(8p\pm1)$, manifested by magnetoresistance minima superimposed on the insulating background. In stark contrast to $\nu=$ 1/2 and 1/4, however, we observe a pronounced, sharp minimum in magnetoresistance at $\nu=$ 1/6 and a somewhat weaker minimum at $\nu=$ 1/8, suggesting developing FQHSs, likely stabilized by the pairing of composite fermions that carry six and eight flux quanta. Our results signal the unexpected entry, in ultrahigh-quality samples, of FQHSs at even-denominator fillings 1/6 and 1/8, which are likely to harbor non-Abelian anyon excitations.

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arXiv2024

Developing fractional quantum Hall states at $\nu$ = $\dfrac{1}{7}$ and $\dfrac{2}{11}$ in the presence of significant Landau level mixing

Termination of the fractional quantum Hall states (FQHSs) and the emergence of Wigner crystal phases at very small Landau level filling factors ($\nu$) have been of continued interest for decades. Recently, in ultra-high-quality, dilute GaAs 2D electron systems (2DESs), strong evidence was reported for FQHSs at $\nu=1/7, 2/13$ and 2/11 which fall in the $\nu = p/(6p\pm1)$ Jain series of FQHSs, interpreted as integer ($p = 1$, 2) QHSs of 6-flux composite fermions ($^6$CFs). These states are surrounded by strongly-insulating phases which are generally believed to be Wigner crystals. Here, we study an ultra-high-quality 2DES confined to an AlAs quantum well where the 2D electrons have a much larger effective mass ($m^*\simeq 0.45 m_e$) and a smaller dielectric constant ($\epsilon\simeq10\epsilon_0$) compared to GaAs 2D electrons ($m^*\simeq 0.067 m_e$ and $\epsilon\simeq13\epsilon_0$). This combination of $m^*$ and $\epsilon$ renders the Landau level mixing parameter $\kappa$, defined as the ratio of the Coulomb and cyclotron energies, $\simeq 9$ times larger in AlAs 2DESs ($\kappa\propto m^*/\epsilon$). Qualitatively similar to the GaAs 2DESs, we observe an insulating behavior reentrant around a strong $\nu=1/5$ FQHS, and extending to $\nu<1/5$. Additionally, we observe a clear minimum in magnetoresistance at $\nu=2/11$, and an inflection point at $\nu=1/7$ which is very reminiscent of the first report of an emerging FQHS at $\nu=1/7$ in GaAs 2DESs. The data provide evidence for developing QHSs of $^6$CFs at very small fillings. This is very surprising because $\kappa$ near $\nu \simeq 1/6$ in our sample is very large ($\simeq4$), and larger $\kappa$ has the tendency to favor Wigner crystal states over FQHSs at small fillings. Our data should inspire calculations that accurately incorporate $\kappa$ in competing many-body phases of $^6$CFs at extremely small fillings near $\nu=1/6$.

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arXiv2024

Origin of pinning disorder in magnetic-field-induced Wigner solids

At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here we present a study of the pinning mode resonance in the low-$ν$ Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths, $d$. The pinning mode frequencies,$f_p$, decrease strongly as $d$ increases, with the widest well exhibiting $f_p$ as low as $\simeq$35 MHz. The amount of reduction of \fp\ with increasing $d$ can be explained remarkably well by tails of the wave function impinging into the alloy-disordered Al$_x$Ga$_{1-x}$As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.

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arXiv2024

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's most fundamental parameters, namely the energy gap that determines its low-temperature conductivity, in record-mobility, ultra-high-purity, two-dimensional electrons confined to GaAs quantum wells. The WC domains in these samples contain $\simeq$ 1000 electrons. The measured gaps are a factor of three larger than previously reported for lower quality samples, and agree remarkably well with values predicted for the lowest-energy, intrinsic, hyper-corelated bubble defects in a WC made of flux-electron composite fermions, rather than bare electrons. The agreement is particularly noteworthy, given that the calculations are done for disorder-free composite fermion WCs, and there are no adjustable parameters. The results reflect the exceptionally high quality of the samples, and suggest that composite fermion WCs are indeed more stable compared to their electron counterparts.

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arXiv2024

Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system

In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics. We report here, measurements on an ultra-low-disorder, dilute 2DES, confined to a GaAs quantum well. In the $ν< 1/5$ range, superimposed on a highly-insulating longitudinal resistance, the 2DES exhibits a developing fractional quantum Hall state at $ν=1/7$, attesting to its exceptional high quality, and dominance of electron-electron interaction in the low filling regime. In the nearby insulating phases, we observe remarkable non-linear \textit{I-V} and noise characteristics as a function of increasing current, with current thresholds delineating three distinct phases of the WS: a pinned phase (P1) with very small noise, a second phase (P2) in which $dV/dI$ fluctuates between positive and negative values and is accompanied by very high noise, and a third phase (P3) where $dV/dI$ is nearly constant and small, and noise is about an order of magnitude lower than in P2. In the depinned (P2 and P3) phases, the noise spectrum also reveals well-defined peaks at frequencies that vary linearly with the applied current, suggestive of washboard frequencies. We discuss the data in light of a recent theory that proposes different dynamic phases for a driven WS.

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arXiv2023

Ultraclean two-dimensional hole systems with mobilities exceeding 10$^7$ cm$^2$/Vs

Owing to their large effective mass, strong and tunable spin-orbit coupling, and complex band-structure, two-dimensional hole systems (2DHSs) in GaAs quantum wells provide rich platforms to probe exotic many-body physics, while also offering potential applications in ballistic and spintronics devices, and fault-tolerant topological quantum computing. We present here a systematic study of molecular-beam-epitaxy grown, modulation-doped, GaAs (001) 2DHSs where we explore the limits of low-temperature 2DHS mobility by optimizing two parameters, the GaAs quantum well width and the alloy fraction ($x$) of the flanking Al$_x$Ga$_{1-x}$As barriers. We obtain a breakthrough in 2DHS mobility, with a peak value $\simeq 18 \times 10^6$ cm$^2$/Vs at a density of 3.8 $\times$ 10$^{10}$ /cm$^{2}$, implying a mean-free-path of $\simeq 57 μ$m. Using transport calculations tailored to our structures, we analyze the operating scattering mechanisms to explain the non-monotonic evolution of mobility with density. We find it imperative to include the dependence of effective mass on 2DHS density, well width, and $x$. We observe concomitant improvement in quality as evinced by the appearance of delicate fractional quantum Hall states at very low density.

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arXiv2023

Fractional Quantum Hall State at Filling Factor $ν=1/4$ in Ultra-High-Quality GaAs 2D Hole Systems

Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at $ν=1/4$, superimposed on a highly insulating background, suggesting a close competition between the $ν=1/4$ FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations which predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at $ν=1/4$. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs.

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arXiv2023

Highly-Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally-Coupled Half-Filled Landau Level

The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here we report the observation of an even-denominator fractional quantum Hall state with highly-anisotropic in-plane transport coefficients at Landau level filling factor $ν=3/2$. We observe this state in an ultra-high-quality GaAs two-dimensional hole system when a large in-plane magnetic field is applied. By increasing the in-plane field, we observe a sharp transition from an isotropic composite fermion Fermi sea to an anisotropic even-denominator FQHS. Our data and calculations suggest that a unique feature of two-dimensional holes, namely the coupling between heavy-hole and light-hole states, combines different orbital components in the wavefunction of one Landau level, and leads to the emergence of a highly-anisotropic even-denominator fractional quantum Hall state. Our results demonstrate that the GaAs two-dimensional hole system is a unique platform for the exploration of exotic, many-body ground states.

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arXiv2023

Topological phase transition between composite-fermion and Pfaffian daughter states near ν = 1/2 FQHS

$ν$=1/2 is among the most enigmatic many-body phases in two-dimensional electron systems as it appears in the ground-state rather than an excited Landau level. It is observed in wide quantum wells where the electrons have a bilayer charge distribution with finite tunneling. Whether this 1/2 FQHS is two-component (Abelian) or one-component (non-Abelian) has been debated since its experimental discovery over 30 years ago. Here, we report strong 1/2 FQHSs in ultrahigh-quality, wide, GaAs quantum wells, with transport energy gaps up to $\simeq$4K, among the largest gaps reported for any even-denominator FQHS. The 1/2 FQHS is flanked by numerous, Jain-sequence FQHSs at $ν$=$p$/(2$p$$\pm$1) up to $ν$=8/17 and 9/17. Remarkably, as we raise the density and strengthen the 1/2 FQHS, the 8/17 and 7/13 FQHSs suddenly become strong, much stronger than their neighboring high-order FQHSs. Insofar as FQHSs at $ν$=8/17 and 7/13 are precisely the theoretically-predicted, simplest, daughter states of the one-component Pfaffian 1/2 FQHS, our data suggest a topological phase-transition of 8/17 and 7/13 FQHSs from the Jain-states to the daughter states of the Pfaffian, and that the parent 1/2 FQHS we observe is the Pfaffian state.

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arXiv2023

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent $κ\simeq 0.42$. Here we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our study is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that $κ$ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor $ν=1/2$, and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the non-universal $κ$ observed in our experiments.

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arXiv2023

Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($ν$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $ν=1/2$ in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multi-valley degree of freedom offer an unprecedented tunability of the $ν=1/2$ FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the $ν=1/2$ FQHS depend strongly on valley occupancy.

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arXiv2022

Fractional quantum Hall valley ferromagnetism in the extreme quantum limit

Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magneto-transport experiments demonstrating how the valley degree of freedom impacts the fractional quantum states (FQHSs), and the related magnetic-flux-electron composite fermions (CFs), at very high magnetic fields in the extreme quantum limit when only the lowest Landau level is occupied. Unlike in other multivalley two-dimensional electron systems such as Si or monolayer graphene and transition-metal dichalcogenides, in our AlAs sample we can continuously tune the valley polarization via the application of in-situ strain. We find that the FQHSs remain exceptionally strong even as they make valley polarization transitions, revealing a surprisingly robust ferromagnetism of the FQHSs and the underlying CFs. Our observation implies that the CFs are strongly interacting in our system. We are also able to obtain a phase diagram for the FQHS and CF valley polarization in the extreme quantum limit as we monitor transitions of the FHQSs with different valley polarizations.

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arXiv2022

Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing

In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and near filling factor $ν=1$. As we tune the field position of the crossing from one side of $ν=1$ to the other by changing the hole density, the energy gap for the quantum Hall state at $ν=1$ remains exceptionally large, and only shows a small dip near the crossing. The gap overall follows a $\sqrt{B}$ dependence, expected for the exchange energy. Our data are consistent with a robust quantum Hall ferromagnet as the ground state.

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arXiv2022

Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3/4

Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasi-particles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν = 3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magneto-transport measurements reveal a strong minimum in the longitudinal resistance at ν = 3/4, accompanied by a developing Hall plateau centered at (h/e2)/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions.

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arXiv2022

Composite Fermion Mass

Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental property of a FQHS, namely its energy gap. We present here experimental measurements of $m_{CF}$ in ultra-high quality two-dimensional electron systems confined to GaAs quantum wells of varying thickness. An advantage of measuring $m_{CF}$ over gap measurements is that mass values are insensitive to disorder and are therefore ideal for comparison with theoretical calculations, especially for high-order FQHS. Our data reveal that $m_{CF}$ increases with increasing well width, reflecting a decrease in the energy gap as the electron layer becomes thicker and the in-plane Coulomb energy softens. Comparing our measured masses with available theoretical results, we find significant quantitative discrepancies, highlighting that more rigorous and accurate calculations are needed to explain the experimental data.

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