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M. T. Greenaway

Publications and source records attributed to M. T. Greenaway.

At least 19 recordsLinked to original sources

Systemically Designed Degrees for Real-World Challenges: A case study on Physics curriculum design at Loughborough University

We present a ground-up redesign of the undergraduate physics degree at Loughborough University, driven by the principle of authenticity in academic and industrial practice. Departing from conventional incremental reforms, we adopt a systems-engineering approach to programme-level curriculum design, treating the degree as an integrated system with verifiable performance. This methodology aligns stakeholder-derived requirements with vertically-integrated threads in theory, computation, laboratory practice, and professional skills. We demonstrate that this approach enables students to achieve levels of disciplinary and cross-disciplinary competence beyond those typically expected at undergraduate level. Outcomes are supported by graduate destinations, enhanced student performance, and positive external evaluations, including national accreditation. Our results suggest that rigorous, system-level curriculum design can yield transformational gains in both capability and confidence.

physics.ed-ph

Extreme electron-hole drag and negative mobility in the Dirac plasma of graphene

Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of electron-hole drag in the Planckian plasma that develops in monolayer graphene in the vicinity of its Dirac point above liquid-nitrogen temperatures. The frequent electron-hole scattering forces minority carriers to move against the applied electric field due to the drag induced by majority carriers. This unidirectional transport of electrons and holes results in nominally negative mobility for the minority carriers. The electron-hole drag is found to be strongest near-room temperature, despite being notably affected by phonon scattering. Our findings provide better understanding of the transport properties of charge-neutral graphene, reveal limits on its hydrodynamic description and also offer insight into quantum-critical systems in general.

cond-mat.mes-hall

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.

cond-mat.mes-hall

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.

cond-mat.other

Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects

Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a "Doppler-like" shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter-Landau level (LL) transitions; (ii) an intra-LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.

cond-mat.mes-hall

Emergence and Control of Complex Behaviours in Driven Systems of Interacting Qubits with Dissipation

Progress in the creation of large scale, artificial quantum coherent structures demands the investigation of their nonequilibrium dynamics when strong interactions, even between remote parts, are non-perturbative. Analysis of multiparticle quantum correlations in a large system in the presence of decoherence and external driving is especially topical. Still, scaling behaviour of dynamics and related emergent phenomena are not yet well understood. We investigate how the dynamics of a driven system of several quantum elements (e.g., qubits or Rydberg atoms) changes with increasing number of elements. Surprisingly, a two-element system exhibits chaotic behaviours. For larger system sizes a highly stochastic, far from equilibrium, {\em hyperchaotic} regime emerges. Its complexity systematically scales with the size of the system, proportionally to the number of elements. Finally, we demonstrate that these chaotic dynamics can be efficiently controlled by a periodic driving field. The insights provided by our results indicate the possibility of a reduced description for the behaviour of a large quantum system in terms of the transitions between its qualitatively different dynamical regimes, which are controlled by a relatively small number of parameters, and may prove useful in the design, characterization and control of large artificial quantum structures.

quant-ph

Ultrafast strain-induced charge transport in semiconductor superlattices

We investigate the effect of hypersonic (> 1 GHz) acoustic phonon wavepackets on electron transport in a semiconductor superlattice. Our quantum mechanical simulations demonstrate that a GHz train of picosecond deformation strain pulses propagating through a superlattice can generate current oscillations whose frequency is several times higher than that of the strain pulse train. The shape and polarity of the calculated current pulses agree well with experimentally measured electric signals. The calculations also explain and accurately reproduce the measured variation of the induced current pulse magnitude with the strain pulse amplitude and applied bias voltage. Our results open a route to developing acoustically-driven semiconductor superlattices as sources of millimetre and sub-millimetre electromagnetic waves.

physics.app-ph

Strong magnetophonon oscillations in extra-large graphene

Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graphene/hexagonal boron-nitride Hall bars and show that wider devices reveal additional quantum effects. In devices wider than ten micrometres we observe distinct magnetoresistance oscillations that are caused by resonant scattering of Landau-quantised Dirac electrons by acoustic phonons in graphene. The study allows us to accurately determine graphene's low energy phonon dispersion curves and shows that transverse acoustic modes cause most of phonon scattering. Our work highlights the crucial importance of device width when probing quantum effects and also demonstrates a precise, spectroscopic method for studying electron-phonon interactions in van der Waals heterostructures.

cond-mat.mes-hall

Magnetophonon spectroscopy of Dirac Fermion scattering by transverse and longitudinal acoustic phonons in graphene

Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the experimental data over a wide range of carrier densities. It demonstrates the predominance of carrier scattering by low energy transverse acoustic (TA) mode phonons: the magnetophonon resonance amplitude is significantly stronger for the TA modes than for the longitudinal acoustic (LA) modes. We demonstrate that the LA and TA phonon speeds and the electron-phonon coupling strengths determined from the magnetophonon resonance measurements also provide an excellent fit to the measured dependence of the resistivity at zero magnetic field over a temperature range of 4-150 K. A semiclassical description of magnetophonon resonance in graphene is shown to provide a simple physical explanation for the dependence of the magneto-oscillation period on carrier density. The correspondence between the quantum calculation and the semiclassical model is discussed.

cond-mat.mes-hall

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.

cond-mat.mes-hall

Effects of classical stochastic webs on the quantum dynamics of cold atomic gases in a moving optical lattice

We introduce and investigate a system that uses temporal resonance-induced phase space pathways to create strong coupling between an atomic Bose-Einstein condensate and a traveling optical lattice potential. We show that these pathways thread both the classical and quantum phase space of the atom cloud, even when the optical lattice potential is arbitrarily weak. The topology of the pathways, which form web-like patterns, can by controled by changing the amplitude and period of the optical lattice. In turn, this control can be used to increase and limit the BEC's center-of-mass kinetic energy to pre-specified values. Surprisingly, the strength of the atom-lattice interaction and resulting BEC heating of the center-of-mass motion is enhanced by the repulsive inter-atomic interactions.

cond-mat.quant-gas

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

cond-mat.mes-hall

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

cond-mat.mes-hall

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

cond-mat.mes-hall

Resonant tunnelling between the chiral Landau states of twisted graphene lattices

A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions.

cond-mat.mes-hall

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.

cond-mat.mes-hall

Resonant tunnelling and negative differential conductance in graphene transistors

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

cond-mat.mes-hall

Resonant control of cold-atom transport through two optical lattices with a constant relative speed

We show theoretically that the dynamics of cold atoms in the lowest energy band of a stationary optical lattice can be transformed and controlled by a second, weaker, periodic potential moving at a constant speed along the axis of the stationary lattice. The atom trajectories exhibit complex behavior, which depends sensitively on the amplitude and speed of the propagating lattice. When the speed and amplitude of the moving potential are low, the atoms are dragged through the static lattice and perform drifting orbits with frequencies an order of magnitude higher than that corresponding to the moving potential. Increasing either the speed or amplitude of the moving lattice induces Bloch-like oscillations within the energy band of the static lattice, which exhibit complex resonances at critical values of the system parameters. In some cases, a very small change in these parameters can reverse the atom's direction of motion. In order to understand these dynamics we present an analytical model, which describes the key features of the atom transport and also accurately predicts the positions of the resonant features in the atom's phase space. The abrupt controllable transitions between dynamical regimes, and the associated set of resonances, provide a mechanism for transporting atoms between precise locations in a lattice: as required for using cold atoms to simulate condensed matter or as a stepping stone to quantum information processing. The system also provides a direct quantum simulator of acoustic waves propagating through semiconductor nanostructures in sound analogs of the optical laser (SASER).

cond-mat.quant-gas