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M. Takizawa

Publications and source records attributed to M. Takizawa.

At least 37 records · Page 2Linked to original sources
arXiv2008

Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.

cond-mat.mtrl-sci↗
arXiv2008

Doping evolution of the electronic structure in the single-layer cuprates Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$: Comparison with other single-layer cuprates

We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca$_{2-x}$Na$_{x}$CuO$_{2}$Cl$_2$ (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La$_{2-x}$Sr$_{x}$CuO$_{4}$ (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tight-binding fit, and the deduced next-nearest-neighbor hopping integral $t'$ also confirm the similarity to Na-CCOC and the difference from LSCO.

cond-mat.supr-con↗
arXiv2008

Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$

The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.

cond-mat.mtrl-sci↗
arXiv2007

Effects of electron-phonon coupling in angle-resolved photoemission spectra of SrTiO3

We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.

cond-mat.mtrl-sci↗
arXiv2007

Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni$_{1-x}$Fe$_x$O with hole doping

The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emission near valence-band maximum increased with Li content, consistent with the increase of electrical conductivity. Based on these findings, percolation of bound magnetic polarons is proposed as an origin of the ferromagnetic behavior.

cond-mat.mtrl-sci↗
arXiv2007

Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization

By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.

cond-mat.mtrl-sci↗
arXiv2007

Chemical potential shift induced by double-exchange and polaronic effects in Nd_{1-x}Sr_xMnO_3

We have studied the chemical potential shift as a function of temperature in Nd$_{1-x}$Sr$_x$MnO$_3$ (NSMO) by measurements of core-level photoemission spectra. For ferromagnetic samples ($x=0.4$ and 0.45), we observed an unusually large upward chemical potential shift with decreasing temperature in the low-temperature region of the ferromagnetic metallic (FM) phase. This can be explained by the double-exchange (DE) mechanism if the $e_g$ band is split by dynamical/local Jahn-Teller effect. The shift was suppressed near the Curie temperature ($T_C$), which we attribute to the crossover from the DE to lattice-polaron regimes.

cond-mat.str-el↗
arXiv2007

Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy

Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.

cond-mat.mtrl-sci↗
arXiv2006

Photoemission study of TiO2/VO2 interfaces

We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator transition temperature of the VO$_2$ thin films, $\sim 300$ K, metallic states were not observed for the interfaces with TiO$_2$, in contrast with the interfaces between the band insulator SrTiO$_3$ and the Mott insulator LaTiO$_3$ in spite of the fact that both TiO$_2$ and SrTiO$_3$ are band insulators with $d^0$ electronic configurations and both VO$_2$ and LaTiO$_3$ are Mott insulators with $d^1$ electronic configurations. We discuss possible origins of this difference and suggest the importance of the polarity discontinuity of the interfaces. Stronger incoherent part was observed in r-TiO$_2$/VO$_2$ than in a-TiO$_2$/VO$_2$, suggesting Ti-V atomic diffusion due to the higher deposition temperature for r-TiO$_2$/VO$_2$.

cond-mat.str-el↗
arXiv2006

Chemical potential shift and spectral weight transfer in Pr$_{1-x}$Ca$_x$MnO$_3$ revealed by photoemission spectroscopy

We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level ($E_F$) as a function of carrier concentration in Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO, $0.2 \le x \le 0.65$) through the measurements of photoemission spectra. The results showed that the chemical potential shift was suppressed for $x \agt 0.3$, where the charge exchange (CE)-type antiferromagnetic charge-ordered state appears at low temperatures. We consider this observation to be related to charge self-organization such as stripe formation on a microscopic scale in this composition range. Together with the previous observation of monotonous chemical potential shift in La$_{1-x}$Sr$_x$MnO$_3$, we conclude that the tendency toward the charge self-organization increases with decreasing bandwidth. In the valence band, spectral weight of the Mn 3$d$ $e_g$ electrons in PCMO was transferred from $\sim$ 1 eV below $E_F$ to the region near $E_F$ with hole doping, leading to a finite intensity at $E_F$ even in the paramagnetic insulating phase for $x \agt 0.3$, probably related with the tendency toward charge self-organization. The finite intensity at $E_F$ in spite of the insulating transport behavior is consistent with fluctuations involving ferromagnetic metallic states.

cond-mat.str-el↗
arXiv2006

Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices

We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an ``electronic reconstruction'' occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (~ 1000 C), which leads to Sr/La atomic interdiffusion and hence to the formation of La1-xSrxTiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cut-off is enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.

cond-mat.mtrl-sci↗
arXiv2006

Effect of strong localization of doped holes in angle-resolved photoemission spectra of La$_{1-x}$Sr$_x$FeO$_3$

We have performed an angle-resolved photoemission spectroscopy study of La$_{0.6}$Sr$_{0.4}$FeO$_3$ using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level ($E_F$) by $\sim 1$ eV compared with the calculation and to form a (pseudo)gap of $\sim 1$ eV at $E_F$. We attribute this observation to a strong localization effect of doped holes due to polaron formation.

cond-mat.str-el↗
arXiv2005

Valence changes associated with the metal-insulator transition in Bi$_{1-x}$La$_x$NiO$_3$

Perovskite-type BiNiO$_3$ is an insulating antiferromagnet in which a charge disproportionation occurs at the Bi site. La substitution for Bi suppresses the charge disproportionation and makes the system metallic. We have measured the photoemission and x-ray absorption (XAS) spectra of Bi$_{1-x}$La$_{x}$NiO$_{3}$ to investigate how the electronic structure changes with La doping. From Ni $2p$ XAS, we observed an increase of the valence of Ni from 2+ toward 3+. Combined with the core-level photoemission study, it was found that the average valence of Bi remains $\sim 4+$ and that the Ni valence behaves as $\sim (2+x)+$, that is, La substitution results in hole doping at the Ni sites. In the valence-band photoemission spectra, we observed a Fermi cutoff for $x>0$, consistent with the metallic behavior of the La-doped compounds. The Ni $2p$ XAS, Ni $2p$ core-level photoemission, and valence-band photoemission spectra were analyzed by configuration-interaction cluster-model calculation, and the spectral line shapes were found to be consistent with the gradual Ni$^{2+} \to$ Ni$^{3+}$ valence change.

cond-mat.str-el↗
arXiv2004

Manifestation of Correlation Effects in the photoemission spectra of Ca$_{1-x}$Sr$_x$RuO$_3$

We have measured soft x-ray photoemission and O 1{\it s} x-ray absorption spectra of Ca$_{1-x}$Sr$_x$RuO$_3$ thin films prepared {\it in situ}. The coherent and incoherent parts have been identified in the bulk component of the photoemission spectra, and spectral weight transfer from the coherent to the incoherent part has been observed with decreasing $x$, namely, with increasing orthorhombic distortion. We propose that, while the Ru 4d one-electron bandwidth does not change with $x$, the distortion and hence the splitting of the $t_{2\text{g}}$ band effectively increases electron correlation strength. Although strong mass enhancement is found in the electronic specific heat data, the coherent part remains wide, suggesting enhanced band narrowing only in the vicinity of {\it E$_{F}$}.

cond-mat.str-el↗
arXiv2004

Temperature-dependent soft x-ray photoemission and absorption studies of charge disproportionation in La$_{1-x}$Sr$_x$FeO$_3$

We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$) resulting in long-range spin and charge ordering is known to occur below $T_{CD}=190$ K. With decreasing temperature we observed gradual changes of the spectra with spectral weight transfer over a wide energy range of $\sim 5$ eV. Above $T_{CD}$ the intensity at the Fermi level ($E_F$) was relatively high compared to that below $T_{CD}$ but still much lower than that in conventional metals. We also found a similar temperature dependence for $x=0.4$, and to a lesser extent for $x=0.2$. These observations suggest that a local charge disproportionation occurs not only in the $x=0.67$ sample below $T_{CD}$ but also over a wider temperature and composition range in LSFO. This implies that the tendency toward charge disproportionation may be the origin of the unusually wide insulating region of the LSFO phase diagram.

cond-mat.str-el↗
arXiv1999

U_A(1) Symmetry Breaking and eta, eta prime mesons in the Bethe-Salpeter Approach

U_A(1) symmetry breaking is studied by introducing the flavor mixing interaction proposed by Kobayashi, Maskawa and 't Hooft. Combining the one gluon exchange interaction, the rainbow like Schwinger-Dyson equation and the ladder like Bethe-Salpeter equation are derived. The anomalous PCAC relation in the framework of this approximation is considered. The masses of the pseudoscalar mesons pi,eta and eta' are calculated. It is found that the pion mass is not sensitive to the strength of the flavor mixing interaction. On the other hand, the masses of eta and eta' are reproduced by a relatively weak flavor mixing interaction, for which the chiral symmetry breaking is dominantly induced by the soft-gluon exchange interaction. The decay constants are calculated and the anomalous PCAC relation is numerically checked. It is found that the flavor structures of the eta and eta' mesons significantly depend on their masses and therefore it is quetionable to define a flavor mixing angle for eta and eta'.

hep-ph↗
arXiv1998

Dynamical Chiral Symmetry Breaking in Effective Models of QCD in the Bethe-Salpeter Approach

Dynamical breaking of chiral symmetry in effective models of QCD is studied. Introducing a cut-off function or a non-local interaction, the Noether current must be modified and thus the Ward-Takahashi identity and the PCAC relation are modified accordingly. We point out that the pion decay constant must be defined consistently with the Noether current so that the low-energy relations are satisfied. We define the proxy of the Noether current for general effective models, which is consistent with loop expansion of the Cornwall-Jackiw-Tomboulis effective action. A general formula for the pion decay constant in terms of the Bethe-Salpeter amplitude is derived. The effective Pagels-Stokar formula is proposed which is useful to estimate the decay constant without solving the Bethe-Salpeter equation.

hep-ph↗