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M. Tran

Publications and source records attributed to M. Tran.

3 recordsLinked to original sources

Quantum Enhanced Pauli Propagation

Accurately estimating observables on noisy quantum devices remains a central challenge for near-term quantum algorithms. While quantum error mitigation techniques can reduce noise-induced bias, they often rely on unverifiable assumptions about the circuit noise, and cannot guarantee the magnitude of residual bias error. Here, rather than using classical resources to mitigate a noisy quantum circuit execution, we propose a hybrid algorithm that uses quantum resources to improve the accuracy of approximate classical Pauli-path simulation. Our protocol, Quantum Enhanced Pauli Propagation (QuEPP), uses Clifford perturbation theory (CPT) to construct a classically simulable ensemble of Clifford circuits from the low-order terms in CPT, which directly provide the approximate classical Pauli-path simulation of the target circuit. Noisy quantum expectation values of this ensemble are then used to infer a global rescaling factor that corrects quantum execution of the target circuit, providing higher-order contributions absent from the truncated low-order classical simulation. This approach requires no noise characterization, applies to arbitrary circuits, and provides a provable route to asymptotically unbiased estimates. Using IBM Heron hardware, we demonstrate QuEPP on 2D random mirror circuits of up to 49 qubits and circuit depth 80, as well as Trotterized Hamiltonian evolution, showing consistent improvements beyond classical CPT and unmitigated quantum results. QuEPP offers a simple, scalable, and model-free framework for enabling accurate quantum computation in the pre-fault-tolerant era.

quant-ph

Tunable Room Temperature Magnetic Skyrmions in Ir/Fe/Co/Pt Multilayers

Magnetic skyrmions are nanoscale topological spin structures offering great promise for next-generation information storage technologies. The recent discovery of sub-100 nm room temperature (RT) skyrmions in several multilayer films has triggered vigorous efforts to modulate their physical properties for their use in devices. Here we present a tunable RT skyrmion platform based on multilayer stacks of Ir/Fe/Co/Pt, which we study using X-ray microscopy, magnetic force microscopy and Hall transport techniques. By varying the ferromagnetic layer composition, we can tailor the magnetic interactions governing skyrmion properties, thereby tuning their thermodynamic stability parameter by an order of magnitude. The skyrmions exhibit a smooth crossover between isolated (metastable) and disordered lattice configurations across samples, while their size and density can be tuned by factors of 2 and 10 respectively. We thus establish a platform for investigating functional sub-50 nm RT skyrmions, pointing towards the development of skyrmion-based memory devices.

cond-mat.mes-hall

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.

cond-mat.mtrl-sci