arXiv subjects

M. Väänänen

Publications and source records attributed to M. Väänänen.

3 recordsLinked to original sources

arXiv2025

Evaluation of CZT Detector Performance in Alpha and Gamma Spectrometry

Presented is a work on the performance studies of Cadmium Zinc Telluride (CZT) planar detector structures. Current-voltage (IV), capacitance-voltage (CV), and gamma- and alpha-spectroscopy measurements were carried out to provide the essential baseline required for forthcoming defect configuration impact studies on the detector spectroscopy performance. For each tested sensor, spectroscopic responses were recorded with several bias voltages applied. The described suite of measurements provides the parameters needed to evaluate, bulk resistivity, signal efficiency, and energy resolution for characteristic peaks at different energies. Readout configurations and data processing are discussed in related sections.

physics.ins-det↗

arXiv2024

Defect detection and size classification in CdTe samples in 3D

Defects in semiconductor crystals can have significant detrimental effects on their performance as radiation detectors. Defects cause charge trapping and recombination, leading to lower signal amplitudes and poor energy resolution. We have designed and built a modular 3D scanner for analyzing these defects in semiconductor samples using commercial off-the-shelf components. Previous solutions offer great spatial resolution, but have limited sample holding capacity and use continuum light sources which can cause difficulty differentiating between different materials within samples. Our design also includes a modular sample holder allowing for easy changing of samples. In this paper, we showcase first results achieved with this custom built scanner as well as planned developments.

physics.ins-det↗

arXiv2022

Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator

The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors with negative oxides (such as aluminium oxide - Al$_2$O$_3$ and hafnium oxide - HfO$_2$) as field insulators that possess good dielectric strength and provide radiation hardness. Thin films of Al$_2$O$_3$ and HfO$_2$ grown by atomic layer deposition (ALD) method were used as dielectrics for capacitive coupling. A comparison study based on dielectric material used in MOS capacitors indicate HfO$_2$ as a better candidate since it provides higher sensitivity (where, the term sensitivity is defined as the ratio of the change in flat-band voltage to dose) to negative charge accumulation with gamma irradiation. Further, space charge sign inversion was observed for sensors processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates that were irradiated with gamma rays up to a dose of 1 MGy. The inter-pixel resistance values of heavily gamma irradiated AC-coupled pixel sensors suggest that high-$K$ negative oxides as field insulators provide a good electrical isolation between the pixels.

physics.ins-det↗