arXiv subjects

M. V. Golubkov

Publications and source records attributed to M. V. Golubkov.

5 recordsLinked to original sources

arXiv2001

Width of the Zero-Field Superconducting Resistive Transition in the Vicinity of the Localization Threshold

Resistive superconducting zero-field transition in amorphous In-O films in states from the vicinity of the insulator-superconductor transition is analyzed in terms of two characteristic temperatures: the upper one, $T_{c0}$, where the finite amplitude of the order parameter is established and the lower one, $T_c$, where the phase ordering takes place. It follows from the magnetoresistance measurements that the resistance in between, $T_c<T<T_{c0}$, cannot be ascribed to dissipation by thermally dissociated vortex pairs. So, it is not Kosterlitz-Thouless-Berezinskii transition that happens at $T_c$.

cond-mat.supr-con↗

arXiv2000

Observation of the parallel-magnetic-field-induced superconductor-insulator transition in thin amorphous InO films

We study the response of a thin superconducting amorphous InO film with variable oxygen content to a parallel magnetic field. A field-induced superconductor-insulator transition (SIT) is observed that is very similar to the one in normal magnetic fields. As the boson-vortex duality, which is the key-stone of the theory of the field-induced SIT, is obviously absent in the parallel configuration, we have to draw conclusion about the theory insufficiency.

cond-mat.str-el↗

arXiv2000

Scaling analysis of the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

We have studied the magnetic-field-tuned superconductor-insulator quantum transition (SIT) in amorphous In-O films with different oxygen content and, hence, different electron density. While for states of the film near the zero-field SIT the two-dimensional scaling behaviour is confirmed, for deeper states in the superconducting phase the SIT scenario changes: in addition to the scaling function that describes the conductivity of fluctuation-induced Cooper pairs, there emerges a temperature-dependent contribution to the film resistance. This contribution can originate from the conductivity of normal electrons.

cond-mat.supr-con↗

arXiv1998

Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous InO films

We have investigated the field-induced superconductivity-destroying quantum transition in amorphous indium oxide films at low temperatures down to 30 mK. It has been found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increasing magnetic field the film resistance drops and approaches in the high-field limit the resistance value at transition point so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron pairs.

cond-mat.str-el↗

arXiv1998

Resistance behavior near the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

We have studied the magnetic-field-tuned superconductivity destroying quantum transition in amorphous In-O films with the onset of superconductivity in zero field at about 2 K. At temperatures down to 30 mK the critical resistance R_c=R(T,B_c) has been found to change approximately linearly with temperature, which is in contradiction to a standard description where zero slope dR_c/dT = 0 is assumed near T=0. To make the data R(T,B) collapse in the vicinity of transition against scaling variable (B-B_c)/T^{1/y}, one has either to allow for the intrinsic temperature dependence of R_c or to postulate the critical field B_c to be temperature-dependent B_c(T)-B_c(0)~T^{1+1/y}. We find that the state on the high-field side of the transition can be both insulating and metallic and we determine the critical index y=1.2.

cond-mat.str-el↗