arXiv subjects

M. V. Klymenko

Publications and source records attributed to M. V. Klymenko.

6 recordsLinked to original sources

arXiv2023

Excitons and singlet fission at hybrid inorganic-organic semiconductor interfaces

Excitons in organic crystalline semiconductors play a crucial role in the operation of optoelectronic devices such as organic solar cells, light-emitting diodes, and photodetectors. The excitonic properties of materials are dramatically affected by the presence of surfaces and interfaces. In this work, we investigate the influence of a neutral hydrogen-passivated 1x2 reconstructed (100) silicon substrate on excitons within the crystalline tetracene layer deposited on the top of it. Our findings reveal that singlet excitons in the contact tetracene layer are situated within the continuum of unbound Wannier-Mott excitonic states in silicon, with noteworthy hybridization between these states. Consequently, in the contact tetracene layer, all singlet excitons exhibit a pronounced interlayer charge transfer character, while the triplet exciton remains confined to the tetracene layer. This makes the singlet fission effect highly improbable for the contact tetracene layer. Additionally, the presence of the silicon substrate results in a modification of the singlet-triplet gap by 144 meV. This change is solely attributed to the hybridization with excitons in silicon, which influences the exchange energy. Our results show that the dynamic dielectric screening caused by the substrate does not impact the singlet-triplet gap but alters the exciton binding energies.

cond-mat.mtrl-sci↗

arXiv2022

A many-body perturbation theory approach to energy band alignment at the crystalline tetracene-silicon interface

Hybrid inorganic-organic semiconductor interfaces are of interest for new photovoltaic devices operating above the Shockley-Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tackle this problem, we use many-body perturbation theory in the non-self-consistent GW approximation, orbital relaxation corrections for organic semiconductors, and line-up potential method for inorganic semiconductors which allows for tractable and accurate computing of energy band alignment in crystalline van-der-Waals hybrid inorganic-organic semiconductor interfaces. In this work, we study crystalline tetracene physisorbed on the clean hydrogen-passivated 1x2 reconstructed (100) silicon surface. Using this computational approach, we find that the energy band alignment is determined by an interplay of the mutual dynamic dielectric screening of two materials and the formation of a dipole layer due to a weak hybridization of atomic/molecular orbitals at the interface. We also emphasize the significant role of the exchange-correlation effects in predicting band offsets for the hybrid inorganic-organic semiconductor interfaces.

cond-mat.mtrl-sci↗

arXiv2020

NanoNET: an extendable Python framework for semi-empirical tight-binding models

We present a novel open-source Python framework called NanoNET (Nanoscale Non-equilibrium Electron Transport) for modelling electronic structure and transport. Our method is based on the tight-binding method and non-equilibrium Green's function theory. The core functionality of the framework is providing facilities for efficient construction of tight-binding Hamiltonian matrices from a list of atomic coordinates and a lookup table of the two-center integrals in dense, sparse, or block-tridiagonal forms. The framework implements a method based on $kd$-tree nearest-neighbour search and is applicable to isolated atomic clusters and periodic structures. A set of subroutines for detecting the block-tridiagonal structure of a Hamiltonian matrix and splitting it into series of diagonal and off-diagonal blocks is based on a new greedy algorithm with recursion. Additionally the developed software is equipped with a set of programs for computing complex band structure, self-energies of elastic scattering processes, and Green's functions. Examples of usage and capabilities of the computational framework are illustrated by computing the band structure and transport properties of a silicon nanowire as well as the band structure of bulk bismuth.

physics.comp-ph↗

arXiv2019

Probing charge carrier movement in organic semiconductor thin films via nanowire conductance spectroscopy

Understanding the movement of charge within organic semiconducting films is crucial for applications in photo-voltaics and flexible electronics. We study the sensitivity of the electrical conductance of a silicon nanowire to changes of charge states within an organic semiconductor physisorbed on the surface of the nanowire. Elastic scattering caused by motion of charge carriers near the nanowire modifies the mean-free path for backscattering of electrons propagating within it, which we have mathematically expressed in terms of the causal Green's functions. The scattering potential has been computed using a combination of the polarizable continuum model and density functional theory with the range-separated exchange-correlation functional for organic molecules and the semi-empirical tight-binding model for silicon. As an example, the sensitivity to charge state changes in tetracene is computed as a function of operating temperature and geometrical parameters of a nanowire. For a single molecule, ultra-thin silicon nanowires with characteristic sizes of the cross-section below 2 nm produce a detectable conductance change at room temperature. For larger nanowires the sensitivity is reduced, however the conductance change grows with the number of charged molecules: with sub-4 nm nanowires being sensitive enough to detect several tens of charge carriers. We propose using noise spectroscopy to access the temporal evolution of the charge states. Information regarding the spatial distribution of charge carries in organic thin films can be obtained using a grid of nanowire resistors and electric impedance tomography.

cond-mat.mes-hall↗

arXiv2016

Linear and planar molecules formed by coupled P donors in silicon

Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary geometrical configuration in silicon taking into account the valley-orbit coupling. The methodology is applied to three coupled phosphorus donors, arranged in a linear chain and in a triangle, and to six donors arranged in a regular hexagon. The results of the simulations evidence that the valley composition of the single-electron states strongly depends on the geometry of the dopant molecule and its orientation relative to the crystallographic axes of silicon. The electron binding energy of the triatomic linear molecules is larger than that of the diatomic molecule oriented along the same crystallographic axis, but the energy gap between the ground state and the first excited state is not significantly different for internuclear distances from 1.5 to 6.6 nm. Three donor atoms arranged in a triangle geometry have larger binding energies than a triatomic linear chain of dopants with the same internuclear distances. The planar donor molecules are characterized by a strong polarization in favor of the valleys oriented perpendicular to the plane of the molecule. The polarization increases with number of atoms forming the planar molecule.

cond-mat.mes-hall↗

arXiv2016

Multi-valley envelope function equations and effective potentials for P impurity in silicon

We propose a system of real-space envelope function equations without fitting parameters for modeling the electronic spectrum and wave functions of a phosphorus donor atom embedded in silicon. The approach relies on the Burt-Foreman envelope function representation and leads to coupled effective-mass Schroedinger equations containing smooth effective potentials. These potentials result from the spatial filtering imposed on the exact potential energy matrix elements in the envelope function representation. The corresponding filter function is determined from the definition of the envelope function. The resulting effective potentials and the system of envelope functions jointly reproduce the valley-orbit coupling effect in the doped silicon. Including the valley-orbit coupling not only of the 1s, but also for 2s atomic orbitals, as well as static dielectric screening is found crucial to accurately reproduce experimental data. The measured binding energies are recovered with a maximum relative error of 1.53 %. The computed wave functions are in a good agreement with experimental measurements of the electron density provided by scanning tunneling microscopy.

cond-mat.mes-hall↗