arXiv subjects

M. Vandelli

Publications and source records attributed to M. Vandelli.

5 recordsLinked to original sources

arXiv2023

Extended regime of coexisting metallic and insulating phases in a two-orbital electronic system

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration of the non-local collective electronic fluctuations strongly affects the picture of the phase transition provided by the dynamical mean field theory. Our calculations reveal the appearance of metallic and Mott insulating states characterised by the same density but different values of the chemical potential, which is missing in the local approximation to electronic correlations. We find that the region of concomitant metastability of these two solutions is remarkably broad in terms of the interaction strength. It starts at a critical value of the interaction slightly larger than the bandwidth and extends to more than twice the bandwidth, where the two solutions merge into a Mott insulating phase. Our results illustrate that non-local correlations can have crucial consequences on the electronic properties in the strongly correlated regime of the simplest multi-orbital systems.

cond-mat.str-el↗

arXiv2021

Impact of partially bosonized collective fluctuations on electronic degrees of freedom

In this work we present a comprehensive analysis of collective electronic fluctuations and their effect on single-particle properties of the Hubbard model. Our approach is based on a standard dual fermion/boson scheme with the interaction truncated at the two-particle level. Within this framework we compare various approximations that differ in the set of diagrams (ladder vs exact diagrammatic Monte Carlo), and/or in the form of the four-point interaction vertex (exact vs partially bosonized). This allows to evaluate the effect of all components of the four-point vertex function on the electronic self-energy. In particular, we observe that contributions that are not accounted for by the partially bosonized approximation for the vertex have only a minor effect on electronic degrees of freedom in a broad range of model parameters. In addition, we find that in the regime, where the ladder dual fermion approximation provides an accurate solution of the problem, the leading contribution to the self-energy is given by the longitudional bosonic modes. This can be explained by the fact that contributions of transverse particle-hole and particle-particle modes partially cancel each other. Our results justify the applicability of the recently introduced dual triply irreducible local expansion (D-TRILEX) method that represents one of the simplest consistent diagrammatic extensions of the dynamical mean-field theory. We find that the self-consistent D-TRILEX approach is reasonably accurate also in challenging regimes of the Hubbard model, even where the dynamical mean-field theory does not provide the optimal local reference point (impurity problem) for the diagrammatic expansion.

cond-mat.str-el↗

arXiv2020

Dual Boson Diagrammatic Monte Carlo Approach Applied to the Extended Hubbard Model

In this work we introduce the Dual Boson Diagrammatic Monte Carlo technique for strongly interacting electronic systems. This method combines the strength of dynamical mean-filed theory for non-perturbative description of local correlations with the systematic account of non-local corrections in the Dual Boson theory by the diagrammatic Monte Carlo approach. It allows us to get a numerically exact solution of the dual boson theory at the two-particle local vertex level for the extended Hubbard model. We show that it can be efficiently applied to description of single particle observables in a wide range of interaction strengths. We compare our exact results for the self-energy with the ladder Dual Boson approach and determine a physical regime, where description of collective electronic effects requires more accurate consideration beyond the ladder approximation. Additionally, we find that the order-by-order analysis of the perturbative diagrammatic series for the single-particle Green's function allows to estimate the transition point to the charge density wave phase.

cond-mat.str-el↗

arXiv2020

Nonlinear optical study of commensurability effects in graphene-hBN heterostructures

Second-order nonlinear optical response allows to detect different properties of the system associated with the inversion symmetry breaking. Here, we use a second harmonic generation effect to investigate the alignment of a graphene/hexagonal Boron Nitride heterostructure. To achieve that, we activate a commensurate-incommensurate phase transition by a thermal annealing of the sample. We find that this structural change in the system can be directly observed through a strong modification of a nonlinear optical signal. This result reveals the potential of a second harmonic generation technique for probing structural properties of layered systems.

cond-mat.mes-hall↗

arXiv2019

Resonant optical second harmonic generation in graphene-based heterostructures

An optical Second-Harmonic Generation (SHG) allows to probe various structural and symmetry-related properties of materials, since it is sensitive to the inversion symmetry breaking in the system. Here, we investigate the SHG response from a single layer of graphene disposed on an insulating hexagonal Boron Nitride (hBN) and Silicon Carbide (SiC) substrates. The considered systems are described by a non-interacting tight-binding model with a mass term, which describes a non-equivalence of two sublattices of graphene when the latter is placed on a substrate. The resulting SHG signal linearly depends on the degree of the inversion symmetry breaking (value of the mass term) and reveals several resonances associated with the band gap, van Hove singularity, and band width. The difficulty in distinguishing between SHG signals coming from the considered heterostrusture and environment (insulating substrate) can be avoided applying a homogeneous magnetic field. The latter creates Landau levels in the energy spectrum and leads to multiple resonances in the SHG spectrum. Position of these resonances explicitly depends on the value of the mass term. We show that at energies below the band-gap of the substrate the SHG signal from the massive graphene becomes resonant at physically relevant values of the applied magnetic field, while the SHG response from the environment stays off-resonant.

cond-mat.mes-hall↗