Strain effects in [001] textured Co80Ir20 thin films with negative magnetocrystalline anisotropy
Co80Ir20 ferromagnetic thin films have recently been the focus of intensive research because the negative magnetocrystalline anisotropy adds to the shape anisotropy and favors a strong alignment of the magnetization in the film plane for [001] textured or epitaxial thin films. However, the role of magnetoelastic effects has not been properly considered in most published research. In this work we have performed a detailed analysis of 24 nm Co80Ir20 thin films deposited on Si/SiO2 with different underlayers (Ta, Pt) and overlayers in order to induce [001]-textured growth and different degrees of strain. Using x-ray diffraction measurements we have found that the c-axis lattice parameter depends on the underlayer material (larger negative strain for Ta), but the degree of texture and the average grain size remain essentially constant, except for one of the multilayers. Differences in the magnetic behavior according to the underlayer were also found in room temperature magnetization vs field loops and temperature dependent dc magnetization measurements. Anisotropy was quantified using ferromagnetic resonance which showed that the effective anisotropy field is also dependent on the underlayer. Ta underlayers show an anisotropy close to that expected for shape, while Pt underlayer induces an additional in-plane anisotropy field of the order of 7-9 kOe. A simple model of stress induced anisotropy gives anisotropy field values similar to those observed experimentally. The correlation between observed strain and anisotropy together with the similarity in microstructural properties strongly suggests that stress effects cannot be disregarded when analyzing the magnetic data for the estimation of the magnetocrystalline contribution.