arXiv subjects

M. X. Chen

Publications and source records attributed to M. X. Chen.

11 recordsLinked to original sources

arXiv2024

Suppression and excitation condition of collision on instabilities of electrostatic plasmas

Two-stream (TS) and Bump-On-Tail (BOT) electron distributions can induce instabilities in collisionless plasmas, which is closely related to phenomena in space and fusion plasmas. Collisions can lead to unexpected plasma behavior, especially in dense and/or low temperature plasmas. In this work, the Vlasov-Poisson system with Krook collisions are used to study the effect of collisions. Normally, the collision can dissipate the system energy which causes the suppression of the instabilities. Against the traditional suppression effect of collision on the instability, it is found in our simulation that the collision can also excite the instability even in the forbidden beam velocity range predicted by the cold-beam theory. With collision, the beam velocity range can be divided into suppression area [vth/2, vc + vth], transition area [vc - vth, vc + vth], excitation area [vc + vth, 2vc] and forbidden area [2vc, +infinity] for TS instability. where vc is the critical velocity from cold-beam theory and vth is thermal velocity or the beam width in our simulation. The collision dissipation effect and the excitation of beam instability can compete with each other, which evoked the excitation of collision on TS instability. The collision can change the suppression and excitation condition from beam theory. However, for BOT instability, there is only suppression effect of collision on the instability. These results can expand the view of collision effect on instability of electrostatic plasmas.

physics.plasm-ph↗

arXiv2018

Topological phase transition with nanoscale inhomogeneity in (Bi$_{1-x}$In$_{x}$)$_{2}$Se$_{3}$

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength, and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In doped Bi$_2$Se$_3$. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.

cond-mat.str-el↗

arXiv2017

Effects of magnetic dopants in (Li$_{0.8}$M$_{0.2}$OH)FeSe (M = Fe, Mn, Co): a density-functional theory study using band unfolding technique

The effects of Fe dopants in (Li$_{0.8}$Fe$_{0.2}$OH)FeSe on the electronic band structure are investigated by band unfolding ($k$-projection) technique based on first-principles supercell calculations. Doping 20\% Fe into the LiOH layers has significant effects on the band structure, that is, the Fe impurities doping electrons to the FeSe layers not only shift the Fermi level, but also induce substantial changes in the profile of bands around the Fermi level. However, the magnetic ordering in the dopants has minor effects on the band structure due to the fact that there is only a weak bonding between the LiOH and FeSe layers. Electronic bands for the surface FeSe layer show noticeable differences from those for inner layers in both the location of the Fermi level and details of the bands near the high symmetry points. The band structure for the surface FeSe layer where the Fe atoms are in checkerboard antiferromagnetic order is consistent with angle-resolved photoemission spectroscopy results. Mn and Co have similar doping effects on the band structure of (LiOH)FeSe.

cond-mat.mtrl-sci↗

arXiv2017

Topological Dirac states beyond $π$ orbitals for silicene on SiC(0001) surface

The discovery of intriguing properties related to the Dirac states in graphene has spurred huge interest in exploring its two-dimensional group-IV counterparts, such as silicene, germanene, and stanene. However, these materials have to be obtained via synthesizing on substrates with strong interfacial interactions, which usually destroy their intrinsic $π$($p_z$)-orbital Dirac states. Here we report a theoretical study on the existence of Dirac states arising from the $p_{x,y}$ orbitals instead of $p_z$ orbitals in silicene on 4H-SiC(0001), which survive in spite of the strong interfacial interactions. We also show that the exchange field together with the spin-orbital coupling give rise to a detectable band gap of 1.3 meV. Berry curvature calculations demonstrate the nontrivial topological nature of such Dirac states with a Chern number $C = 2$, presenting the potential of realizing quantum anomalous Hall effect for silicene on SiC(0001). Finally, we construct a minimal effective model to capture the low-energy physics of this system. This finding is expected to be also applicable to germanene and stanene, and imply great application potentials in nanoelectronics.

cond-mat.mes-hall↗

arXiv2017

Effects of interface oxygen vacancies on electronic bands of FeSe/SrTiO3(001)

Modifications of the electronic bands of thin FeSe films due to oxygen vacancies in the supporting SrTiO 3 (001) substrate - and the interplay with spin-orbit coupling, magnetism, and epitaxy - are investigated by first-principles supercell calculations. Unfolded (k-projected) bands show that the oxygen vacancies both provide electron doping to the interface FeSe layer and also have notable effects on the details of the bands around the Fermi level, including renormalizing the width of the Fe-3d band near the Fermi level by a factor of about 0.6, and causing a splitting of ~40 meV at the M point for the checkerboard antiferromagnetic configuration. For an FeSe bilayer, the modifications to the bands are mainly limited to the interface FeSe layer. While spin-orbit-coupling induced band splittings of ~30 meV at M for the ideal FeSe/SrTiO3 (001) interfaces are comparable to the splitting due to oxygen vacancies, the effects are not simply additive. Calculations and comparison to our scanning tunneling microscopy images of MBE-grown FeSe films on SrTiO3 (001) suggest that a common defect may be Se bound to an oxygen vacancy at the interface

cond-mat.mtrl-sci↗

arXiv2016

Designing substrates for silicene and germanene: First-principles calculations

We propose a guideline for exploring substrates that stabilize the monolayer honeycomb structure of silicene and germanene while simultaneously preserve the Dirac states: in addition to have a strong binding energy to the monolayer, a suitable substrate should be a large-gap semiconductor with a proper workfunction such that the Dirac point lies in the gap and far from the substrate states when their bands align. We illustrate our idea by performing first-principles calculations for silicene and germanene on the Al-terminated (0001) surface of Al2O3 . The overlaid monolayers on Al-terminated Al2O3(0001) retain the main structural profile of the low-buckled honeycomb structure via a binding energy comparable to the one between silicene and Ag(111). Unfolded band structure derived from the k-projection method reveals that gapped Dirac cone is formed at the K point due to the structural distortion and the interaction with the substrate. The gaps of 0.4 eV and 0.3 eV respectively for the supported silicene and germanene suggest that they may have potential applications in nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2016

Half-metallic Dirac cone in zigzag-graphene-nanoribbon/graphene

The Dirac electrons of graphene, an intrinsic zero gap semiconductor, uniquely carry spin and pseudospin that give rise to many fascinating electronic and transport properties. While isolated zigzag graphene nanoribbons are antiferromagnetic semiconductors, we show by means of first-principles and tight-binding calculations that zigzag graphene nanoribbons supported on graphene are half-metallic as a result of spin- and pseudospin-symmetry breaking. In particular, half-metallic Dirac cones are formed at K (K') near the Fermi level. The present results demonstrate that the unique combination of spin and pseudospin in zigzag graphene nanoribbons may be used to manipulate the electronic properties of graphene, and may have practical implications for potential graphene-based nanoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2014

Revealing the substrate origin of the linear dispersion of silicene/Ag(111)

The band structure of the recently synthesized (3$\times$3) silicene monolayer on (4$\times$4) Ag(111) is investigated using density functional theory. A $k$-projection technique that includes the $k_\bot$-dependence of the surface bands is used to separate the contributions arising from the silicene and the substrate, allowing a consistent comparison between the calculations and the angle-resolved photoemission experiments. Our calculations not only reproduce the observed gap and linear dispersion across the K point of (1$\times$1) silicene, but also demonstrate that these originate from the $k_\bot$-dependence of Ag(111) substrate states (modified by interactions with the silicene) and \textit{not} from a Dirac state.

cond-mat.mtrl-sci↗

arXiv2014

Electronic thermal conductivity as derived by density functional theory

Reliable evaluation of the lattice thermal conductivity is of importance for optimizing the figure-of-merit of thermoelectric materials. Traditionally, when deriving the phonon mediated thermal conductivity $κ_{ph} = κ- κ_{el}$ from the measured total thermal conductivity $κ$ the constant Lorenz number $L_0$ of the Wiedemann-Franz law \mbox{$\mathbf{κ_{el}}=T L_0 σ$} is chosen. The present study demonstrates that this procedure is not reliable when the Seebeck coefficient $|S|$ becomes large which is exactly the case for a thermoelectric material of interest. Another approximation using $L_0-S^2$, which seem to work better for medium values of $S^2$ also fails when $S^2$ becomes large, as is the case when the system becomes semiconducting/insulating. For a reliable estimation of $κ_{el}$ it is proposed, that a full first-principles calculations by combining density functional theory with Boltzmann's transport theory has to be made. For the present study such an approach was chosen for investigating the clathrate type-I compound Ba$_8$Au$_{6-x}$Ge$_{40+x}$ for a series of dopings or compositions $x$. For a doping of $0.8$ electrons corresponding to $x=0.27$ the calculated temperature dependent Seebeck coefficient agrees well with recent experiments corroborating the validity of the density functional theory approach.

cond-mat.mtrl-sci↗

arXiv2012

Optimizing thermoelectric properties of filled MPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites by band engineering

On the basis of density functional theory (DFT) calculations thermoelectric properties are derived for Sb-doped skutterudites MPt$_4$Ge$_{12-x}$Sb$_x$ with M=Ba,La,Th. It is predicted that the originally very small absolute values of Seebeck coefficients $|S|$ of the undoped compounds is increased by factors of 10 or more for suitable dopings. The optimal dopings correspond to a "magic" valence electron number for which all electronic states up to a (pseudo)gap are filled. The theoretical findings are corroborated by measurements of $S$ for LaPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites. DFT derived vibrational rattling-like modes for LaPt$_4$Ge$_{12}$ indicate a small value for the lattice thermal conductivity which in combination with a large value of $S^2$ makes the La-based skutterudites appear as promising thermoelectric materials.

cond-mat.mtrl-sci↗

arXiv2011

Thermoelectric properties of Ba-Cu-Si clathrates

Thermoelectric properties of the type-I clathrates Ba$_8$Cu$_x$Si$_{46-x}$ ($3.6 \leq x \leq 7$, $x$ = nominal Cu content) are investigated both experimentally and theoretically. The polycrystalline samples are prepared either by melting, ball milling and hot pressing or by melt spinning, hand milling and hot pressing techniques. Temperature-dependent electrical resistivity, $ρ(T)$, and the Seebeck coefficient, $S(T)$, measurements reveal metal-like behavior for all samples. For $x = 5$ and 6, density functional theory calculations are performed for deriving the enthalpy of formation and the electronic structure which is exploited for the calculation of Seebeck coefficients and conductivity within Boltzmann's transport theory. For simulating the properties of doped clathrates the rigid band model is applied. On the basis of the density functional theory results the experimentally observed compositional dependence of $ρ(T)$ and $S(T)$ of the whole sample series is analyzed. The highest dimensionless thermoelectric figure of merit $ZT$ of 0.28 is reached for a melt-spun sample at $600^{\circ}$C. The relatively low $ZT$ values in this system are attributed to the too high charge carrier concentrations.

cond-mat.mtrl-sci↗