arXiv subjects

M. Zani

Publications and source records attributed to M. Zani.

4 recordsLinked to original sources

arXiv2022

Correlation effects in Barkhausen noise and magnetic attenuation in soft ribbons

The propagation of the effects connected with the occurrence of magnetization reversals in an amorphous ribbon of Fe$_{63}$B$_{64}$Si$_{8}$Ni$_{15}$ has been investigated using a method based on two pickup coils separated by a distance variable between 2 an 40 mm. The ratio $R$ between the voltage signals induced in the coils contains information on the location where the magnetization reversal took place. This information can be extracted by knowing the function $V(x)$ which represents the attenuation of a signal generated by a reversal that took place at a distance x from the coil. A mathematical model for extracting this function starting from the histogram of the experimentally measured values of $R$ is presented. The attenuation function obtained in this way is relatively independent on the distance between the coils, and this is in strong support of the correctness of the model adopted.

cond-mat.stat-mech↗

arXiv2018

Approximation complexity of homogeneous sums of random processes

We study approximation properties of additive random fields $Y_d$, $d\in\mathbb{N}$, which are sums of zero-mean random processes with the same continuous covariance functions. The average case approximation complexity $n^{Y_d}(\varepsilon)$ is defined as the minimal number of evaluations of arbitrary linear functionals needed to approximate $Y_d$, with relative $2$-average error not exceeding a given threshold $\varepsilon\in(0,1)$. We investigate the growth of $n^{Y_d}(\varepsilon)$ for arbitrary fixed $\varepsilon\in(0,1)$ and $d\to\infty$. The results are applied to sums of standard Wiener processes.

math.PR↗

arXiv2017

Asymptotic analysis of average case approximation complexity of additive random fields

We study approximation properties of sequences of centered additive random fields $Y_d$, $d\in\mathbb{N}$. The average case approximation complexity $n^{Y_d}(\varepsilon)$ is defined as the minimal number of evaluations of arbitrary linear functionals that is needed to approximate $Y_d$ with relative $2$-average error not exceeding a given threshold $\varepsilon\in(0,1)$. We investigate the growth of $n^{Y_d}(\varepsilon)$ for arbitrary fixed $\varepsilon\in(0,1)$ and $d\to\infty$. Under natural assumptions we obtain general results concerning asymptotics of $n^{Y_d}(\varepsilon)$. We apply our results to additive random fields with marginal random processes corresponding to the Korobov kernels.

math.PR↗

arXiv2013

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function mapping, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale.

cond-mat.mes-hall↗