arXiv subjects

Maciej Czapkiewicz

Publications and source records attributed to Maciej Czapkiewicz.

4 recordsLinked to original sources

arXiv2019

Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets

In this work, we comprehensively investigate and discuss the structural, magnetostatic, dynamic, and magnetoresistive properties of epitaxial Co/Mo superlattices. The magnetization of the Co sublayers is coupled antiferromagnetically with a strength that depends on the thickness of the nonmagnetic Mo spacer. The magnetization and magnetoresistance hysteresis loops clearly reflect interlayer exchange coupling and the occurrence of uniaxial magnetic anisotropy induced by the strained Co sublayers. Upon accounting for a deviation of the sublayer thicknesses from the nominal value, theoretical modeling, including both micromagnetic and macrospin approaches, precisely reproduces experimental magnetic hysteresis loops, magnetoresistance curves, and ferromagnetic resonance dispersion relations. The Mo spacer thickness as a function of the interlayer magnetic coupling is determined as a fitting parameter by modeling the experimental results.

cond-mat.mtrl-sci↗

arXiv2015

Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/MgO/FeCoB/Ta/Ru multilayers for three different buffers: Ta 5 / Ru 10 / Ta 3, Ta 5 / Ru 10 / Ta 10 and Ta 5 / Ru 20 / Ta 5 (all thicknesses in nm). In addition, we study systems with a single FeCoB layer deposited above as well as below the MgO barrier. The crystallographic texture and the roughness of the buffers are determined by means of XRD and atomic force microscopy measurements. Furthermore, we examine the magnetic domain pattern, the magnetic dead layer thickness and the perpendicular magnetic anisotropy fields for each sample. Finally, we investigate the effect of the current induced magnetization switching for nanopillar junctions with lateral dimensions ranging from 1 μm down to 140 nm. Buffer Ta 5 / Ru 10 / Ta 3, which has the thickest dead layer, exhibits a large increase in the thermal stability factor while featuring a slightly lower critical current density value when compared to the buffer with the thinnest dead layer Ta 5 / Ru 20 / Ta 5.

cond-mat.mes-hall↗

arXiv2013

Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising from the spin transfer torque. Magnetization precession in the free and reference layers of the MTJs is analyzed by comparing ST-FMR signals with macrospin and micromagnetic simulations. From ST-FMR spectra at different DC bias voltage, the in-plane and perpendicular torkances are derived. The experiments and free-electron model calculations show that the absolute torque values are independent of tunnel barrier thickness. The influence of coupling between the free and reference layer of the MTJs on the ST-FMR signals and the derived torkances are discussed.

cond-mat.mes-hall↗

arXiv2011

Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications

We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the field dependence of the effective damping parameter is derived. Below a certain threshold barrier thickness we observe an increased effective damping for antiparallel orientation of free and pinned layer which would inhibit reversible low current density spin torque magnetization reversal. Such inductive measurements, in combination with wafer probe station based magneto transport experiments, allow a fast determination of the optimum tunnel barrier thickness range for spin torque memory applications in a lithography free process.

cond-mat.mes-hall↗