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Madhab Neupane

Publications and source records attributed to Madhab Neupane.

96 records · Page 6Linked to original sources

Saddle point singularity and topological phase diagram in a tunable topological crystalline insulator (TCI)

A topological crystalline insulator (TCI) is a new phase of topological matter, which is predicted to exhibit distinct topological quantum phenomena, since space group symmetries replace the role of time-reversal symmetry in the much-studied Z$_2$ topological insulators. Utilizing high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal the momentum space nature of interconnectivity of the Fermi surface pockets leading to a saddle point singularity within the topological surface state alone in the TCI Pb$_{0.7}$Sn$_{0.3}$Se. Moreover, we show that the measured momentum-integrated density of states exhibits pronounced peaks at the saddle point energies, demonstrating the van Hove singularities (VHSs) in the topological surface states, whose surface chemical potential, as we show, can be tuned via surface chemical gating, providing access to the topological correlated physics on the surface. Our experimental data reveal a delicate relationship among lattice constant, band gap and spin-orbit coupling strength associated with the topological phase transition in Pb$_{1-x}$Sn$_{x}$Se. Furthermore, we explore the robustness of the TCI phase with VHS in Pb$_{1-x}$Sn$_{x}$Se, which shows a variety of distinct topological phase transitions driven by either thermal instability or broken crystalline symmetry, and thus revealing a rich topological phase diagram connectivity in Pb$_{1-x}$Sn$_{x}$Se for the first time.

cond-mat.mes-hall↗

Surface electronic structure of the topological Kondo insulator candidate correlated electron system SmB6

The Kondo insulator SmB6 has long been known to exhibit low temperature transport anomalies whose origin is of great interest. Here we uniquely access the surface electronic structure of the anomalous transport regime by combining state-of-the-art laser- and synchrotron-based angle-resolved photoemission techniques. We observe clear in-gap states (up to 4 meV), whose temperature dependence is contingent upon the Kondo gap formation. In addition, our observed in-gap Fermi surface oddness tied with the Kramers' points topology, their coexistence with the two-dimensional transport anomaly in the Kondo hybridization regime, as well as their robustness against thermal recycling, taken together, collectively provide by-far the strongest evidence for protected surface metallicity with a Fermi surface whose topology is consistent with the theoretically predicted topological surface Fermi surface (TSS). Our observations of systematic surface electronic structure provide the fundamental electronic parameters for the anomalous Kondo ground state of the correlated electron material SmB6.

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Observation of Dirac node formation and mass acquisition in a topological crystalline insulator

In the recently discovered topological crystalline insulators (TCIs), topology and crystal symmetry intertwine to create surface states with a unique set of characteristics. Among the theoretical predictions for TCIs is the possibility of imparting mass to the massless Dirac fermions by breaking crystal symmetry, as well as a Lifshitz transition with a change of Fermi surface topology. Here we report high resolution scanning tunneling microscopy studies of a TCI, Pb1-xSnxSe. We demonstrate the formation of zero mass Dirac fermions protected by crystal symmetry and the mechanism of mass generation via symmetry breaking, which constitute the defining characteristics of TCIs. In addition, we show two distinct regimes of fermiology separated by a Van-Hove singularity at the Lifshitz transition point. Our work paves the way for engineering the Dirac band gap and realizing interaction-driven topological quantum phenomena in TCIs.

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Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator

Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator transition on the surfaces of manganese-doped Bi2Se3 thin films. The resulting electronic groundstate exhibits unique hedgehog-like spin textures at low energies, which directly demonstrate the mechanics of TR symmetry breaking on the surface. We further show that an insulating gap induced by quantum tunnelling between surfaces exhibits spin texture modulation at low energies but respects TR invariance. These spin phenomena and the control of their Fermi surface geometrical phase first demonstrated in our experiments pave the way for the future realization of many predicted exotic magnetic phenomena of topological origin.

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Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films

By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase transitions. At x = 3-7%, there is a transition from a topologically non-trivial metal to a trivial metal. At x = 15%, the metal becomes a variable-range-hopping insulator. Finally, above x = 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating/tunneling insulators.

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Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

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