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Maggy Colas

Publications and source records attributed to Maggy Colas.

2 recordsLinked to original sources

Optical Poling Reveals Hidden Molecular Restructuring in Multimode Fibers, Unlocking Ultra-Efficient Third-Order Nonlinearities

Optical poling is a well-established technique for inducing \chi^{(2)} nonlinearity, yet its impact on silica's molecular structure remains unexplored. Here, we report the first direct observation of molecular restructuring in large-core graded-index multimode fibers (MMFs) induced by optical poling, transforming the silica tetrahedral ring network. Through coherent light beating, this process converts large rings of more than four SiO_4 tetrahedra into smaller ones, altering both linear and nonlinear optical susceptibilities. Contrary to the assumption that poling efficiency stems solely from charge displacement, we show that structural modifications dominate, leading to record enhancements in third-order nonlinear processes, including geometric parametric instabilities (GPIs) and Kerr self-cleaning, despite a low modification of the Kerr coefficient. High-energy poling acts as an in situ annealing process, dynamically modulating the refractive index for unprecedented spatiotemporal light control. These findings provide fundamental insights into silica's molecular dynamics under intense optical fields and open avenues for ultra-efficient nonlinear optical devices, enabling next-generation fiber-based photonics for high-power lasers, broadband light generation, and all-optical signal processing.

physics.optics

Electrically activated W-doped VO2 films for reliable, large-area, broadband THz waves modulators

THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequency ranges. Currently, THz modu-lators face major challenges in consistently producing high modulations depths over large frequency bands. Moreover, a convenient integration for practical applications requires that the modulation/switching properties can be electrically controlled. Devices fulfilling all these con-ditions remain to be demonstrated. In this work we show that W-doped VO2 films grown by direct-current magnetron sputtering can be efficiently used for the development reliable, large-area, broadband THz waves modulators. We demonstrate that W doping not only permits to tune the insulator to metal transition (IMT) temperature of VO2, but also, most importantly, to control the topology of the electrically activated transition. In situ / operando X-ray diffraction and Raman spectroscopy characterizations of the devices, coupled with standard resistivi-ty measurements and time-domain THz spectroscopy, unambiguously demonstrate that the changes in the spatial distribution of the IMT is due to structural distortions induced by W doping.

cond-mat.mtrl-sci