arXiv subjects

Mahammad Tahir

Publications and source records attributed to Mahammad Tahir.

4 recordsLinked to original sources

arXiv2026

Probing Interfacial Spin Dynamics and Temperature Dependent Asymmetry in Spin Pumping Across Ni80Fe20/Cu/Cr1.12Te2 Interfaces

Spin transfers in magnetic multilayers offers a promising pathway toward ultrafast, energy-efficient spintronic devices. In this study, we investigate the interfacial spin pumping and temperature-dependent spin current exchange in a Cr1.12Te2/Cu/Ni80Fe20 (Py)(FM1/NM/FM2) trilayer structure. Using broadband and cryogenic ferromagnetic resonance (FMR) measurements, we investigate key magnetization dynamical parameters, including the effective Gilbert damping factor, effective magnetic fields, interfacial spin mixing conductance, and spin current density. Efficient spin angular momentum transfers from Py to Cr1.12Te2 are observed at room temperature. At lower temperatures, the enhanced linewidth reflects temperature dependent spin pumping effects occurring at distinct precession frequencies of the ferromagnetic layers. Notably, the absence of interfacial Damping indicates that spin pumping can be modulated by controlling the net spin current flow. These findings offer critical insight into temperature-dependent tunable spin transport mechanisms in magnetic multilayers, highlighting their potential for next-generation spintronic applications.

cond-mat.mes-hall↗

arXiv2025

Enhanced Spin Pumping and Magnetization dynamics in Ni$_{80}$Fe$_{20}$/MoS$_2$ stack via interface modification

Materials with strong spin orbit coupling (SOC) are essential for realizing spin orbit torque (SOT) based magnetic memory devices. Transition metal dichalcogenides (TMDs) are promising candidates for such appli cations because of their inherently high SOC strength. In this study, we investigate the spin pumping effect at the interface between a monolayer of molybdenum disulfide (ML-MoS$_2$) and Ni$_{80}$Fe$_{20}$ (Py) thin films using broadband ferromagnetic resonance (FMR) spectroscopy. FMR measurements reveal a notable enhancement in the effective Gilbert damping factor for the ML-MoS$_2$/Py (Pt = 0 nm) interface compared to the reference Py thin films, attributed to spin pumping across the ML-MoS$_2$/Py interface. To further quantify spin pumping efficiency, we introduce a high SOC platinum (Pt) interlayer at the ML-MoS$_2$/Py interface and systematically vary its thickness. This allows us to evaluate key spin transport parameters, including the enhancement in the effective Gilbert damping parameter, the effective spin mixing conductance that reflects the transfer of spin angular momentum from Py to ML-MoS$_2$ and the effective spin current density.

physics.app-ph↗

arXiv2024

Enhancement of spin current to charge current conversion in Ferromagnet/Graphene interface

The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM interface and the effect of interface modification through high spin orbit coupling (SOC) material (Pt) as an interlayer (IL) of varying thicknesses by using broadband FMR spectroscopy. The spin mixing conductance is enhanced from $1.66 \times 10^{18}$ m$^{-2}$ to $2.72 \times 10^{18}$ m$^{-2}$ whereas the spin current density is enhanced from 0.135$\pm $0.003 to 0.242$\pm$0.004 MA/m$^{2}$ at the Graphene/FM interface due to the interface modification using high SOC material Pt as an interlayer. The spin current to charge current conversion efficiency turns out to be $\approx 0.003$ nm for the Graphene/FM interface. These findings support the idea that Graphene in combination with high SOC material (Pt) could be a potential candidate for spintronic applications, specifically for spin-torque-based memory applications.

cond-mat.mes-hall↗

arXiv2023

Interfacial magnetic anisotropy controlled spin pumping in Co60Fe20B20/Pt stack

Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge conversion efficiency of the heavy metal interfacing with ferromagnets. Here, we demonstrate the direct tunability of spin angular momentum transfer and thereby spin pumping, in CoFeB/Pt stack, with interfacial magnetic anisotropy. The ultra-low thickness of CoFeB thin film tilts the magnetic easy axis from in-plane to out-of-plane due to surface anisotropy. The Ferromagnetic resonance measurements are performed to investigate the magnetic anisotropy and spin pumping in CoFeB/Pt stacks. We clearly observe tunable spin pumping effect in the CoFeB/Pt stacks with varying CoFeB thicknesses. The spin current density, with varying ferromagnetic layer thickness, is found to increase from 0.11 to 0.24 MA/m2, with increasing in-plane anisotropy field. Such interfacial anisotropy-controlled generation of pure spin current can potentially lead to next-generation anisotropic spin current-controlled spintronic devices.

cond-mat.mes-hall↗