arXiv subjects

Mahdi Faghihnasiri

Publications and source records attributed to Mahdi Faghihnasiri.

3 recordsLinked to original sources

arXiv2026

Symmetry-Dependent Mechanical and Vibrational Response of Formamidinium Lead Halide Perovskites: A DFT Study

Formamidinium-based hybrid halide perovskites (FAPbX3, X = Cl, Br, and I) have attracted considerable attention for optoelectronic applications owing to their outstanding optical and electronic properties. However, the influence of crystal symmetry reduction on their mechanical behavior and stability has not yet been comprehensively understood. In this work, density functional theory (DFT) calculations were performed to investigate the structural, elastic, dynamical, and nonlinear mechanical properties of the cubic and ps-cubic phases of FAPbX3. The elastic constants, bulk, shear, and Young's moduli, Poisson's ratio, sound velocities, and Debye temperature were evaluated and correlated with the second Piola-Kirchhoff stress-strain response under tensile and compressive loading. The results reveal that the effect of symmetry reduction is strongly dependent on the halide composition. For FAPbCl3 and FAPbBr3, the transition from the cubic to the ps-cubic phase reduces the lattice stiffness, decreases the acoustic phonon velocities, and lowers the Debye temperature, whereas the opposite trend is observed for FAPbI3. The stress-strain analysis further reveals pronounced nonlinear, anisotropic, and asymmetric mechanical behavior, demonstrating that symmetry reduction can either activate or suppress strain-accommodation mechanisms depending on the halide species, thereby governing the mechanical stability and the onset of structural softening. These findings provide microscopic insight into the relationship between crystal symmetry, lattice dynamics, and nonlinear mechanical response in formamidinium-based halide perovskites, offering useful guidance for the design of mechanically robust optoelectronic materials.

cond-mat.mtrl-sci↗

arXiv2021

Reversible tuning the optical properties of defective TMDs monolayers

Potential applications of monolayer of transition metal dichalcogenides (TMDs) in optoelectronic and flexible devices are under heavy investigation. Although TMDs monolayers are highly robust to external mechanical fields, their electronic structure is sensitive to compressive and tensile strain. Besides, intrinsic point defects are present in synthesized samples of these two dimensional (2D) materials which leads to the modification of their electronic and optical properties. Presence of vacancy complexes leads to absorption with larger dipole matrix elements in comparison to the case of simple transition metal vacancies. Using first principles calculations, we scrutinize the effect of various strain situations on the absorption spectra of such defective monolayers and show that strain engineering allows for reversible tuning of the optical properties.

physics.comp-ph↗

arXiv2019

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and optoelectronics. These monolayers can undergo strong elastic deformations, up to about 10\%, without any bond breaking. Moreover, the electronic structure and transport properties, which define the performance of these TMDs monolayers in nanoelectronic devices, can be strongly affected by the presence of point defects, which are often present in the synthetic samples. Thus, it is important to understand both effects on the electronic properties of such monolayers. In this work, we have investigated the electronic structure and energetic properties of defective MoS$_{2}$ monolayers, as subject to various strains, using density functional theory simulations. Our results indicated that strain leads to strong modifications of the defect levels inside the bandgap and their orbital characteristics. Strain also splits the degenerate defect levels up to an amount of 450~meV, proposing novel applications.

physics.comp-ph↗