arXiv subjects

Mahmoud M. Asmar

Publications and source records attributed to Mahmoud M. Asmar.

27 records · Page 2Linked to original sources

arXiv2018

Proximity-Induced Superconductivity at Non-Helical Topological Insulator Interfaces

We study how non-helical spin textures at the boundary between a topological insulator (TI) and a superconductor (SC) affect the proximity-induced superconductivity of the TI interface state. We consider TIs coupled to both spin-singlet and spin-triplet SCs, and show that for the spin-triplet parent SCs the resulting order parameter induced onto the interface state sensitively depends on the symmetries which are broken at the TI-SC boundary. For chiral spin-triplet parent SCs, we find that nodal proximity-induced superconductivity emerges when there is broken twofold rotational symmetry which forces the spins of the non-helical topological states to tilt away from the interface plane. We furthermore show that the Andreev conductance of lateral heterostructures joining TI-vacuum and TI-SC interfaces yields experimental signatures of the reduced symmetries of the interface states.

cond-mat.supr-con↗

arXiv2018

Proximity-induced topological phases in bilayer graphene

We study the band structure of phases induced by depositing bilayer graphene on a transition metal dichalcogenide monolayer. Tight-binding and low-energy effective Hamiltonian calculations show that it is possible to induce topologically nontrivial phases that should exhibit spin Hall effect in these systems. We classify bulk insulating phases through calculation of the Z$_2$ invariant, which unequivocally identifies the topology of the structure. The study of these and similar hybrid systems under applied gate voltage opens the possibility for tunable topological structures in real experimental systems.

cond-mat.mes-hall↗

arXiv2018

Topological phases of topological insulator thin films

We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as function of both the film thickness and the momentum in the plane of the film for Bi$_2$Se$_3$ and Bi$_2$Te$_3$. As a result, while the magnitude of the matrix element at the center of the surface Brillouin Zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and non-topological phases, separated by semimetallic states, as the film thickness varies. In the topological phase the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi$_2$Se$_3$, making Bi$_{2}$Te$_{3}$, where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators.

cond-mat.mes-hall↗

arXiv2017

Minimal Geometry for Valley Filtering in Graphene

The possibility to effect valley splitting of an electronic current in graphene represents the essential component in the new field of valleytronics in such two-dimensional materials. Based on a symmetry analysis of the scattering matrix, we show that if the spatial distribution of multiple potential scatterers breaks mirror symmetry about the axis of incoming electrons, then a splitting of the current between two valleys is observed. This leads to the appearance of the valley Hall effect. We illustrate the effect of mirror symmetry breaking in a minimal system of two symmetric impurities, demonstrating the splitting between valleys via the differential cross sections and non-vanishing skew parameter. We further discuss the role that these effects may play in transport experiments.

cond-mat.mes-hall↗

arXiv2016

Interface symmetry and spin control in topological insulator-semiconductor heterostructures

Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface states appearing at the planar boundary between a topologically-trivial semiconductor (SE) and a TI are controlled by the symmetry of the interface. In contrast to the well-studied helical Dirac surface states, SE-TI interface states exhibit elliptical contours of constant energy and complex spin textures with broken helicity. We derive a general effective Hamiltonian for SE-TI junctions, and propose experimental signatures such as an out of plane spin accumulation under a transport current and the opening of a spectral gap that depends on the direction of an applied in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2016

Mass inversion in graphene by proximity to dichalcogenide monolayer

Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian that describes different symmetry breaking terms in graphene, while preserving time reversal invariance, shows that an inverted mass band gap regime is possible. The competition of different perturbation terms causes a transition from an inverted mass phase to a staggered gap in the bilayer heterostructure, as seen in its phase diagram. A tight-binding calculation of the bilayer validates the effective model parameters. A relative gate voltage between the layers may produce such phase transition in experimentally accessible systems. The phases are characterized in terms of Berry curvature and valley Chern numbers, demonstrating that the system may exhibit quantum spin Hall and valley Hall effects.

cond-mat.mes-hall↗

arXiv2015

Symmetry breaking effects on spin and electronic transport in graphene

The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic transport phenomena. We present an analysis based on symmetry considerations and examine the impact on the scattering matrix for graphene systems containing defects that enhance spin-orbit interactions, while conserving the electronic total angular momentum. We show that the appearance and dominance of skew scattering, and the related observation of valley and/or spin Hall effect in decorated graphene samples, suggests the set of symmetries that adatom perturbations should satisfy. We further show that detailed measurements of the transport and elastic times as a function of carrier concentration make it possible to not only extract the strength of the spin-orbit interaction, as suggested before, but also obtain the amplitude of the symmetry-breaking terms introduced. To examine how different terms would affect measurements, we also present calculations for typical random distributions of impurities with different perturbations, illustrating the detailed energy dependence of different observables

cond-mat.mes-hall↗

arXiv2013

Spin Orbit Interaction and Isotropic Electronic Transport in Graphene

Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of the transport to elastic times for massless electrons signals the anisotropy of the scattering. We show that SOIs lead to a drastic decrease of this ratio, especially at low carrier concentrations, while the scattering becomes increasingly isotropic. As the strength of the SOI determines the energy (carrier concentration) where this drop is more evident, this effect could help evaluate these interactions through transport measurements.

cond-mat.mes-hall↗

arXiv2012

Rashba Spin Orbit Interaction and Birefringent Electron Optics in Graphene

Electron optics exploits the analogies between rays in geometrical optics and electron trajectories, leading to interesting insights and potential applications. Graphene, with its two-dimensionality and photon-like behavior of its charge carriers, is the perfect candidate for the exploitation of electron optics. We show that a circular gate-controlled region in the presence of Rashba spin-orbit interaction in graphene may indeed behave as a Veselago electronic lens but with two different indices of refraction. We demonstrate that this birefringence results in complex caustics patterns for a circular gate, selective focusing of different spins, and the possible direct measurement of the Rashba coupling strength in scanning probe experiments.

cond-mat.mes-hall↗