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Mahmoud Zeer

Publications and source records attributed to Mahmoud Zeer.

5 recordsLinked to original sources

Coexistence and tunability of orbital and spin Hall effects in RuO$_2$

Altermagnetic materials, especially RuO$_2$, have recently attracted considerable attention for their unique magnetic properties and energy-efficient spintronic applications. However, recent experimental studies have reported highly conflicting signatures regarding altermagnetic spin splitting and charge--spin interconversion (CSI) in RuO$_2$. While some experiments link efficient CSI to non-relativistic altermagnetic spin-splitting effects, others observe large CSI signals in non-spin-splitting RuO$_2$, which are instead explained by relativistic inverse spin Hall effects. In this work, based on first-principles calculations, we reveal that these controversial experimental results originate from a phase-dependent coexistence and relative dominance of the orbital Hall effect (OHE) and spin Hall effect (SHE) in RuO$_2$. We systematically investigate the OHE and SHE in both altermagnetic and nonmagnetic phases of RuO$_2$. Our results show that the altermagnetic state hosts a giant OHE that exceeds the SHE by two orders of magnitude and carries an opposite sign. This dominant OHE can generate experimentally observed "SHE-like" voltages through orbital-to-spin conversion, explaining previously reported altermagnetic CSI signals. In contrast, OHE of nonmagnetic RuO$_2$ is suppressed and a large relativistic SHE emerges, in agreement with recent angle-resolved photoemission and spin-pumping experiments. Finally, we demonstrate that the coexistence of OHE and SHE is tunable via chemical doping, enabling on-demand modulation of CSI in in RuO$_2$. Our work provides a new physical mechanism for understanding CSI in RuO$_2$ and highlights the central role of orbital transport.

cond-mat.mtrl-sci

Orbital torques and orbital pumping in two-dimensional rare-earth dichalcogenides

The design of spin-orbit torque properties in two-dimensional (2D) materials presents one of the challenges of modern spintronics. In this context, 2D layers involving rare-earth ions $-$ which give rise to robust magnetism, exhibit pronounced orbital polarization of the states, and carry strong spin-orbit interaction $-$ hold particular promise. Here, we investigate ferromagnetic Janus H-phase monolayers of 4$f$-Eu rare-earth dichalcogenides EuSP, EuSSe, and EuSCl using first-principles calculations. We demonstrate that all compounds exhibit significant spin-orbit torques which originate predominantly in the colossal current-induced orbital response on the Eu $f$-electrons. Moreover, we demonstrate that the corresponding orbital torques can be used to drive strong in-plane currents of orbital angular momentum with non-trivial direction of orbital polarization. Our findings promote $f$-orbital-based 2D materials as a promising platform for in-plane orbital pumping and spin-orbit torque applications, and motivate further research on educated design of orbital properties for orbitronics with 2D materials.

cond-mat.mes-hall

Topology-engineered orbital Hall effect in two-dimensional ferromagnets

Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics.

cond-mat.mtrl-sci

Promoting $p$-based Hall effects by $p$-$d$-$f$ hybridization in Gd-based dichalcogenides

We conduct a first-principles study of Hall effects in rare-earth dichalcogenides, focusing on monolayers of the H-phase EuX$_2$ and GdX$_2$, where X = S, Se, and Te. Our predictions reveal that all EuX$_2$ and GdX$_2$ systems exhibit high magnetic moments and wide bandgaps. We observe that while in case of EuX$_2$ the $p$ and $f$ states hybridize directly below the Fermi energy, the absence of $f$ and $d$ states of Gd at the Fermi energy results in $p$-like spin-polarized electronic structure of GdX$_2$, which mediates $p$-based magnetotransport. Notably, these systems display significant anomalous, spin, and orbital Hall conductivities. We find that in GdX$_2$ the strength of correlations controls the relative position of $p$, $d$ and $f$-states and their hybridization which has a crucial impact on $p$-state polarization and the anomalous Hall effect, but not the spin and orbital Hall effect. Moreover, we find that the application of strain can significantly modify the electronic structure of the monolayers, resulting in quantized charge, spin and orbital transport in GdTe$_2$ via a strain-mediated orbital inversion mechanism taking place at the Fermi energy. Our findings suggest that rare-earth dichalcogenides hold promise as a platform for topological spintronics and orbitronics.

cond-mat.mes-hall

Spin and orbital transport in rare earth dichalcogenides: The case of EuS$_2$

We perform first-principles calculations to determine the electronic, magnetic and transport properties of rare-earth dichalcogenides taking a monolayer of the H-phase EuS$_2$ as a representative. We predict that the H-phase of the EuS$_2$ monolayer exhibits a half-metallic behavior upon doping with a very high magnetic moment. We find that the electronic structure of EuS$_2$ is very sensitive to the value of Coulomb repulsion $U$, which effectively controls the degree of hybridization between Eu-$f$ and S-$p$ states. We further predict that the non-trivial electronic structure of EuS$_2$ directly results in a pronounced anomalous Hall effect with non-trivial band topology. Moreover, while we find that the spin Hall effect closely follows the anomalous Hall effect in the system, the orbital complexity of the system results in a very large orbital Hall effect, whose properties depend very sensitively on the strength of correlations. Our findings thus promote rare-earth based dichalcogenides as a promising platform for topological spintronics and orbitronics.

cond-mat.mtrl-sci