Deterministic single-electron trapping on solid neon using engineered dielectric surface geometry
Levitating electron qubit on the surface of solid neon has recently emerged as a promising and intrinsically noise-resilient platform for quantum information processing. Their ultra-clean, inert environment suppresses conventional decoherence pathways associated with lattice disorder, charge traps, and nuclear-spin baths that limit coherence in semiconductor qubits. Yet, uncontrolled surface features such as bumps, valleys, and electrode-defined gaps can bind electrons unintentionally, contributing charge noise and inducing spin-orbit coupling mediated decoherence. To address this challenge, we propose an engineered interface in which a dielectric layer is deposited beneath the solid neon to provide an atomically smooth template, eliminating surface-roughness induced trapping. By selectively etching this dielectric layer at desired qubit locations, deterministic potential minima can be engineered to reliably capture electrons while suppressing unwanted surface bound states. We perform large-scale Schrodinger and Poisson simulation to compare the existing and proposed strategies of electron trapping on neon, obtaining good agreement with recent experimental measurements.