arXiv subjects

Maja Wasiluk

Publications and source records attributed to Maja Wasiluk.

7 recordsLinked to original sources

arXiv2026

Temperature Dependence of the Refractive Index for AlAsGaSb

Accurate design and optimization of photonic multilayer structures like distributed Bragg reflectors (DBRs) require precise knowledge of material optical constants, particularly the temperature dependence of the refractive index. While these parameters are well established for widely used semiconductors, for emerging materials such as antimonides they are often limited to room-temperature data, especially for new spectral ranges of interest. Antimonide compounds, in particular GaSb-based alloys, are promising for quantum photonics applications. In this work, we investigated DBRs lattice-matched to GaSb and designed for operation in the third telecommunication window. Reflectivity spectra were measured in the temperature range from 11.5 K to 300 K, and then fitted using the transfer matrix method (TMM), combined with a dedicated recursive numerical fitting algorithm. Initial parameters included layer thicknesses determined by scanning electron microscopy (SEM) and literature values of refractive indices at room temperature. This approach enabled extraction of the temperature-dependent refractive indices of two AlGaAsSb alloys suitable for forming DBR mirrors for 1.5 um wavelengths. The obtained results provide essential input for reliable DBR design, ensuring proper stopband positioning and high reflectivity under cryogenic operating conditions required for efficient quantum emitter performance.

cond-mat.other↗

arXiv2026

Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um

A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission wavelength can be modified from 1.48 um to the center of the telecom C-band at 1.55 mm by independently varying the QD composition and size. More specifically, the optical transition energy shifts linearly as a function of In-content of the QD material at a rate of -4.4 meV/In-percentage, and with the number of monolayers (ML) of material used for filling the nanoholes, at -2.0 meV/ML. These experimentally observed energy shifts are well predicted by simulations yielding rates of -4.3 meV/In-percentage and -2.1 meV/ML, respectively. For the simulation, a uniform In composition, low intermixing, and microscopically measured QD geometry is considered. Additionally, excellent ensemble QD uniformity, with unprecedented inhomogeneous broadening well-below 7 meV across all samples is demonstrated. Finally, photoluminescence of single-QDs reveals narrow excitonic emission lines of 13.8+/-6.7 ueV and low fine-structure splitting values reaching <10 ueV. These results identify GaSb-based LDE QDs as a tunable telecom platform for scaling quantum-photonic applications over long-haul optical fiber networks.

cond-mat.mes-hall↗

arXiv2026

Two-photon interference from as-grown InAsP/InP quantum dots under detuned excitation

In this study, we investigate as-grown InAsP/InP quantum dots emitting in the third telecommunication window under detuned quasi-resonant excitation. A large excitation-emission detuning of 32 meV enables efficient suppression of scattered laser light while retaining several advantages of near-resonant excitation. The single-photon nature of the emission is confirmed by a Hanbury Brown and Twiss experiment, yielding a raw second-order autocorrelation value of $g_{\mathrm{raw}}^{(2)}(0)=0.076(6)$. Hong-Ou-Mandel measurement is used to determine the degree of indistinguishability of single photons and reveal as measured visibilities of $V=0.094(4)$ and $V=0.106(5)$ for excitation pulse separations of 13.1 ns and 5.3 ns, respectively. These results demonstrate the potential of as-grown InAsP/InP quantum dots grown via molecular beam epitaxy under not experimentally demanding detuned excitation for generating indistinguishable telecom single photons. Further improvements are to be achieved through Purcell enhancement in optical cavities.

quant-ph↗

arXiv2025

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Hereby, we study the generation of pairs of polarization-entangled photons at telecom C-band by biexciton-exciton cascade from non-resonantly excited epitaxial InAs/InP quantum dots (QDs). It is realized without external tuning of the fine structure splitting (FSS), which does not exceed 10 $\mu$eV in as-grown nanostructures, due to their high in-plane symmetry. Excitonic complexes are identified by means of excitation power-dependent and polarization-resolved magneto)microphotoluminescence. Their origin from different carrier configurations confined in the same QD is confirmed by time correlations of emitted photons. Experimental results are supported by 8-band kp calculations, followed by the configuration interaction method to include excitonic effects. This comparison reveals the structure of higher energy states, allowing for the reconstruction of the QD structural parameters. To verify and quantify the entanglement, we perform quantum state tomography and reconstruct the two-photon density matrix. Its diagonalization allows a detailed analysis of the entangled state and reveals an unfavourable interplay between phase accumulation and decoherence, pointing to a clear route for boosting entanglement by using a XX resonant, pulsed excitation scheme and shortening the radiative lifetimes.

quant-ph↗

arXiv2025

Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect

Spins of carriers confined in quantum dots (QDs) are promising candidates for qubits due to their relatively long spin relaxation times. However, the electron spin dephasing, primarily driven by hyperfine interactions with nuclear spins, can limit their coherence. Here, we report the first Hanle effect demonstration in single InAs(P)/InP QDs emitting in the telecom C-band leading to experimental determination of electron spin dephasing time. Using polarization-resolved photoluminescence spectroscopy, we identified excitonic complexes and confirmed the presence of a negatively charged trion, exhibiting a degree of circular polarization (DOCP) of $-36\%$ under quasi--resonant excitation. From the analysis of Hanle linewidth and employing a previously reported value of the electron $g$-factor, we extracted an electron spin dephasing time of $T_2^{\ast} = 1.59 \pm 0.49~\mathrm{ns}$. Despite the large indium nuclear spin, the obtained $T_2^{\ast}$ is comparable to values reported for GaAs-based QDs, which we attribute to the larger volume of the InAs(P)/InP QDs. These findings confirm the potential of InP-based telecom QDs for use in spin-photon interfaces.

cond-mat.mes-hall↗

arXiv2023

On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices

Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of $4\pi$ and a high single-photon purity in terms of $g^{(2)}(0)=0.005(1)$ and $0.015(1)$ for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the $\pi$-pulse exceeding 80$\%$. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to $35(3)\%$, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.

quant-ph↗

arXiv2023

High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band

Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.

quant-ph↗