arXiv subjects

Makoto Kohda

Publications and source records attributed to Makoto Kohda.

17 recordsLinked to original sources

arXiv2026

Uniform Narrow Excitonic Spectrum in Large-Area Suspended WSe2 Monolayers

Uniformity in the excitonic spectrum is a key requirement for accessing intrinsic excitonic physics in two-dimensional semiconductors; however, in transition-metal dichalcogenide (TMD) monolayers supported on substrates, exciton energies and linewidths can vary spatially due to inhomogeneities from contact with other materials or fabrication residues. Suspended TMD monolayers provide a route to minimizing substrate-induced disorder, although conventional transfer processes can introduce contamination. Here we demonstrate the spatially uniform excitonic spectrum from optically high-quality WSe2 suspended monolayers fabricated by gold-assisted exfoliation directly onto an Au contact electrode of a gate-tunable device. The resulting membranes span narrow suspended regions up to ~80 um and show spatially uniform photoluminescence at cryogenic temperatures with neutral-exciton linewidths as low as ~4.5 meV. Spectral reproducibility supports an intrinsic optical response, while gate-dependent measurements resolve multiple excitonic species. This approach provides a route to electrically tunable potential landscapes in suspended TMD monolayers with a highly uniform excitonic response.

cond-mat.mes-hall↗

arXiv2026

Quantum electrometry in a silicon carbide power device

For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map high electric fields with high spatial resolution, which has not been realized until now. Here we report that the silicon vacancy (Vsi) in SiC has outstanding characteristics for detecting electric fields applied in various directions within a high-biased SiC device. Vsi exhibits an equivalent response to electric field components parallel (Epara) and perpendicular (Eperp) to the c-axis, a feature unique among quantum sensors, and the responsiveness to Epara and Eperp enables detection of arbitrary electric fields encountered in cutting-edge SiC power devices. We confirmed high electric field detection of ~2.3 MV/cm, which is ~90% of the breakdown electric field of a 4H-SiC with typical carrier concentration. Selectively formed Vsi enables high-resolution mapping of electric field distribution. Vsi-based quantum sensors bring data-driven research and development methodologies as well as device degradation diagnosis.

quant-ph↗

arXiv2024

Selective synthesis of large-area monolayer tin sulfide from simple substances

Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices and photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. However, creating atomic-thickness crystals of SnS is challenging owing to the enhanced interlayer interactions caused by lone pair electrons, unlike to SnS2. Here, we demonstrate that p-type SnS can be selectively grown by simply varying the sulfur vapor concentration relative to tin using single-element precursors. We show that monolayer SnS crystals, up to several tens of micrometers in lateral scale, can be easily and safely obtained by high-temperature etching of bulk SnS in a pure nitrogen gas atmosphere. These findings pave the way for device applications based on high-quality tin sulfide.

cond-mat.mtrl-sci↗

arXiv2024

Direct imprinting of arbitrary spin textures using programmable structured light in a semiconductor two-dimensional electron gas

Precise control of spatial spin structures, such as spin helices, is critical for advancing spintronic devices, particularly in non-volatile, low-power information storage and processing. Conventional techniques, including transient spin grating spectroscopy and spatial- and time-resolved Kerr rotation microscopy, are limited by fixed optical grating periods and uniform light polarization, respectively, which constrain the flexibility of spin helix generation. Here, we introduce a novel approach utilizing structured light to directly imprint spatial spin structures in a GaAs/AlGaAs quantum well. This method allows for the precise control over the wave number and configuration of the spin helices, overcoming the limitations of previous techniques. Experiments conducted using pump-probe Kerr rotation microscopy combined with a programmable spatial light modulator revealed the efficient and tunable generation of spin helices. This approach is broadly applicable not only to semiconductors but also to magnetic thin films and 2D materials.

cond-mat.mes-hall↗

arXiv2024

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

We investigate the excitonic species in WS$_{2}$ monolayers transferred onto III-V semiconductor substrates with different surface treatments. When the III-V substrates were covered with amorphous native oxides, negatively charged excitons dominate the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III-V substrates were reduced, neutral excitons begin to dominate the spectral weight, indicating a reduction in the electron density in the WS$_{2}$ monolayers. The removal of the native oxides enhanced the electron transfer from the WS$_{2}$ monolayer to the III-V substrate. In addition, an additional shoulder-like PL feature appeared $\sim$50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III-V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through the substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, to implement deterministic carrier localization or delocalization for the 2D materials, and to facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

cond-mat.mtrl-sci↗

arXiv2022

Imprinting spatial helicity structure of vector vortex beam on spin texture in semiconductors

We present the transfer of the spatially variant polarization of topologically structured light to the spatial spin texture in a semiconductor quantum well. The electron spin texture, which is a circular pattern with repeating spin-up and spin-down states whose repetition rate is determined by the topological charge, is directly excited by a vector vortex beam with a spatial helicity structure. The generated spin texture efficiently evolves into a helical spin wave pattern owing to the spin-orbit effective magnetic fields in the persistent spin helix state by controlling the spatial wave number of the excited spin mode. By tuning the repetition length and azimuthal angle, we simultaneously generate helical spin waves with opposite phases by a single beam.

cond-mat.mes-hall↗

arXiv2021

Reliable modeling of weak antilocalization for accurate spin-lifetime extraction

We examine models for the magneto-conductivity correction in 2DEGs with both Rashba and Dresselhaus spin-orbit coupling (SOC) for their applicability to experimental data fitting. In particular, we compare the Landau-quantized Cooperon approach, which is mostly only numerically treatable, and the quasi-classical approximation that was recently employed to obtain an explicit solution for arbitrary Rashba and Dresselhaus SOC [PRL 112, 156601 (2019)]. It is found that the quasi-classical approximation yields significantly different results even to lowest order in the magnetic field and appears unsuitable for reliable parameter fitting. The discrepancy emerges when a sum over Landau levels is replaced by an integral over wave vectors. Substantial improvement is achieved by supplementing the quasi-classical model with the first two corrections given by the Euler-MacLaurin formula. Corresponding modifications are, however, only feasible in special SOC parameter configurations where the mixing of Landau bands is negligible and a closed-form solution that accounts for Landau quantization is also available. Such a scenario appears in a parameter regime where a persistent spin helix emerges and a transition between weak anti- and weak localization takes place. Combining recent findings, we derive a generalized closed-form expression for the magneto-conductivity correction applicable to generic 2DEGs that are grown along a crystal direction with at least two growth-direction Miller indices equal in modulus. The result is a function of spin lifetimes of the long-lived spin textures and is valid close to the persistent-spin-helix regime. The accuracy of the derived formula is validated by comparing with results from numerical diagonalization of the multiband Cooperon as well as a recently established Monte-Carlo-based real-space simulation in exemplary (001)-, (113)-, and (110)-2DEGs.

cond-mat.mes-hall↗

arXiv2021

Observation of spin-splitter torque in collinear antiferromagnetic RuO$_2$

The spin-splitter effect is theoretically predicted to generate an unconventional spin current with $\mathit{x}$- and $\mathit{z}$- spin polarization via the spin-split band in antiferromagnets. The generated torque, namely spin-splitter torque, is effective for the manipulation of magnetization in an adjacent magnetic layer without an external magnetic field for spintronic devices such as MRAM. Here, we study the generation of torque in collinear antiferromagnetic RuO$_2$ with (100), (101), and (001) crystal planes. Next we find all $\mathit{x}$-, $\mathit{y}$-, and $\mathit{z}$-polarized spin currents depending on the Néel vector direction in RuO$_2$(101). For RuO$_2$(100) and (001), only $\mathit{y}$-polarized spin current was present, which is independent of the Néel vector. Using the $\mathit{z}$-polarized spin currents, we demonstrate field-free switching of the perpendicular magnetized ferromagnet at room temperature. The spin-splitter torque generated from RuO$_2$ is verified to be useful for the switching phenomenon and paves the way for a further understanding of the detailed mechanism of the spin-splitter effect and for developing antiferromagnetic spin-orbitronics.

cond-mat.mtrl-sci↗

arXiv2020

Control of Spin Relaxation Anisotropy by Spin-Orbit-Coupled Diffusive Spin Motion

Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position, resulting in spin precession because of the diffusion-induced spin-orbit field. Near the cancellation between spin-orbit field and external magnetic field, the induced spin precession frequency depends nonlinearly on the diffusion velocity, which is unexpected from the conventional linear relation between the spin-orbit field and the electron velocity.This behavior originates from an enhancement of the spin relaxation anisotropy by the electron velocity perpendicular to the diffused direction. We demonstrate that the spin relaxation anisotropy, which has been regarded as a material constant, can be controlled via diffusive electron motion.

cond-mat.mes-hall↗

arXiv2020

Enhanced longevity of the spin helix in low-symmetry quantum wells

In a semiconductor, collective excitations of spin textures usually decay rather fast due to D'yakonov-Perel' spin relaxation. The latter arises from spin-orbit coupling, which induces wave-vector-dependent spin rotations that, in conjunction with random disorder scattering, generate spin decoherence. However, symmetries occurring under certain conditions can prevent the relaxation of particular homogeneous and inhomogeneous spin textures. The inhomogeneous spin texture, termed as persistent spin helix, is especially appealing as it enables us to manipulate the spin orientation while retaining a long spin lifetime. Recently, it was predicted that such symmetries can be realized in zinc-blende two-dimensional electron gases if at least two growth-direction Miller indices agree in modulus and the coefficients of the Rashba and linear Dresselhaus spin-orbit couplings are suitably matched [PRL 117, 236801 (2016)]. In the present paper, we systematically analyze the impact of the symmetry-breaking cubic Dresselhaus spin-orbit coupling, which generically coexists in these systems, on the stability of the emerging spin helices with respect to the growth direction. We find that, as an interplay between orientation and strength of the effective magnetic field induced by the cubic Dresselhaus terms, the spin relaxation is weakest for a low-symmetry growth direction that can be well approximated by a [225] lattice vector. These quantum wells yield a 30\% spin-helix lifetime enhancement compared to [001]-oriented electron gases and, remarkably, require a negligible Rashba coefficient. The rotation axis of the corresponding spin helix is only slightly tilted out of the quantum-well plane. This makes the experimental study of the spin-helix dynamics readily accessible for conventional optical spin orientation measurements where spins are excited and detected along the quantum-well growth direction.

cond-mat.mes-hall↗

arXiv2019

Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

We have studied spin-orbit (SO) field in Ni$_{80}$Fe$_{20}$(Py)/W/Pt trilayer by means of spin-torque ferromagnetic resonance, and demonstrated that the W/Pt interface generates an extra SO field acting on the Py layer. This unprecedented field originates from the following three processes, 1) spin accumulation at W/Pt interface via the Rashba-Edelstein effect, 2) diffusive spin transport in the W layer, and 3) spin absorption into the Py layer through accumulation at the Py/W interface. Our result means that we can create extra SO field away from the ferromagnet/ metal interface and control its strength by a combination of two different metals.

cond-mat.mes-hall↗

arXiv2015

Shot Noise Induced by Nonequilibrium Spin Accumulation

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.

cond-mat.mes-hall↗

arXiv2013

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.

cond-mat.mtrl-sci↗

arXiv2012

Shot noise suppression in InGaAs/InGaAsP quantum channels

We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e^2/h) (N=4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.

cond-mat.mes-hall↗

arXiv2009

All-electrical detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction in quantum wires

We propose a method to determine the relative strength of Rashba and Dresselhaus spin-orbit interaction from transport measurements without the need of fitting parameters. To this end, we make use of the conductance anisotropy in narrow quantum wires with respect to the directions of an in-plane magnetic field, the quantum wire and the crystal orientation. We support our proposal by numerical calculations of the conductance of quantum wires based on the Landauer formalism which show the applicability of the method to a wide range of parameters.

cond-mat.mes-hall↗

arXiv2005

Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.

cond-mat.mtrl-sci↗

arXiv2001

A spin Esaki diode

We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga,Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with +-6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga,Mn)As.

cond-mat.mtrl-sci↗