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Mamoru Fukunaga

Publications and source records attributed to Mamoru Fukunaga.

2 recordsLinked to original sources

Apparent Ferroelectric Polarization Hysteresis and a Simple Method to Observe Piezoelectric Strain Loops with a Microphone

Extra components in series to non-ferroelectric capacitance can cause apparent ferroelectric D-E hysteresis loops even with the double-wave method (DWM). Characteristics of fake loops are studied withsimple circuit models, and suspicious loops of actual materials are found in some papers using the DWM. Inverse piezoelectric strain also reverses along with the polarization by the electric field, and S-E loops are considered more reliable to prove ferroelectricity than the D-E loops. But measurement of S-E loops usually requires expensive instruments in contrast to D-E loops with a simple circuit. A very simple method is developed to observe S-E loops of bulk samples with an inexpensive small electret microphone and a little expansion to the circuit for D-E loops. S-E loops of a commercial ceramic capacitor by this method reveal that its D-E loops apparent.

cond-mat.mtrl-sci

Origin of dielectric relaxation observed in complex perovskite oxides Ba(1-x)La(x)Ti(1-x)Cr(x)O3

Frequency dependence of the dielectric constant of complex perovskite oxide Ba(1-x)La(x)Ti(1-x)Cr(x)O3 (BLTC) ceramics with the composition ratio 0.4<= x <= 0.7 is precisely measured in the temperature range from 20 K to 300 K, and the dielectric relaxation is found to be quite similar to that of CaCu3Ti4O12 (CCTO), which exhibits the Debye-like frequency dispersion around 100 K. In BLTC, the ferroelectric phase transition temperature shifts to lower temperature with increase of x, while a remarkable dielectric relaxation newly appears at higher temperature region. The dielectric relaxation can be explained by an equivalent model of a series of two R-C parallel circuits, which corresponds to a heterogeneous structure in the sample with an internal barrier layer capacitor. Temperature and frequency dependences of the measured dielectric constant are explained well by the model with the temperature-dependent electrical conductivity and temperature-independent intrinsic dielectric constant. It is also found that the contribution of thin layer to the dielectric relaxation in a high temperature region is affected by the dc bias field on the sample.

cond-mat.mtrl-sci