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Manavendra Pratap Singh

Publications and source records attributed to Manavendra Pratap Singh.

3 recordsLinked to original sources

Anisotropic In-plane Thermal Conductivity of Freestanding Few-layer ReS2

Rhenium disulfide (ReS2) is a low-symmetry transition metal dichalcogenide (TMDC) exhibiting strong in-plane anisotropy, weak interlayer coupling, and stacking-dependent physical properties. While anisotropic thermal conductivity has been reported in bulk ReS2, experimental studies on stackingdependent thermal conductivity and its thickness evolution in the few-layer regime remain largely unexplored. Here, we have extracted the thermal conductivity of freestanding, few-layer ReS2 samples (thickness < 10 nm) using polarization-resolved optothermal Raman thermometry after correcting for polarization dependent absorbance. All measured ReS2 samples show pronounced in-plane anisotropic thermal conductivity. Notably, the ~3.5 nm AA-stacked flake shows higher thermal conductivity than the AB-stacked flake of the same thickness, highlighting the influence of stacking order on phonon transport. The in-plane thermal conductivity displays a non-monotonic dependence on thickness over the 2.5 to 8 nm range which is supported by density functional theory (DFT) calculations. These findings provide key insight into anisotropic phonon transport in low-symmetry 2D materials and highlight the potential of few-layer ReS2 for nanoscale thermal management and thermoelectric applications.

cond-mat.mes-hall↗

Gate-tuneable single-photon emitters in WSe2 monolayer created via AFM nanoindentation on rigid SiO2/Si substrates

Single-photon emitters (SPEs) hosted by two-dimensional (2D) semiconducting materials are envisioned for next-generation quantum applications. However, SPE creation in 2D semiconductors on rigid substrates like SiO2/Si via nanoindentation is a technological gap, critical for interfacing SPEs with photonic circuits and cavities. Here, we report a protocol for deterministically creating SPEs in monolayer WSe2 on SiO2/Si substrates using a sharp diamond AFM (atomic force microscope) tip. A displacement-controlled indentation process is developed, allowing indent depths > 150 nm necessary for creating SPEs. Sharp defect peaks (~200 μeV) are observed in cryogenic (4K) photoluminescence (PL) spectrum at nanoindented sites and are stable upto ~ 120K. 76% of sites exhibit sharp defect-bound peaks confirmed by power-dependent, temperature-dependent, and time-resolved PL (TRPL). AFM and PL mapping link these peaks to indent periphery. The peaks show sub-linewidth spectral jitter, no blinking, and single-photon nature in second-order autocorrelation measurements. SPEs can be switched on/off, and background emissions suppressed using electrical gating. Gate-voltage dependent TRPL indicate that SPE dynamics can be tuned, depending on nature of SPE, pointing the way to higher-purity SPEs. Our work is directly applicable to other 2D materials and photonic circuit/cavity compatible rigid substrates and is a significant step for scalable SPE technologies.

cond-mat.mes-hall↗

Quantum light generation with ultra-high spatial resolution in 2D semiconductors via ultra-low energy electron irradiation

Single photon emitters (SPEs) are building blocks of quantum technologies. Defect engineering of 2D materials is ideal to fabricate SPEs, wherein spatially deterministic and quality-preserving fabrication methods are critical for integration into quantum devices and cavities. Existing methods use combination of strain and electron irradiation, or ion irradiation, which make fabrication complex, and limited by surrounding lattice damage. Here, we utilise only ultra-low energy electron beam irradiation (5 keV) to create dilute defect density in hBN-encapsulated monolayer MoS2, with ultra-high spatial resolution (< 50 nm, extendable to 10 nm). Cryogenic photoluminescence spectra exhibit sharp defect peaks, following power-law for finite density of single defects, and characteristic Zeeman splitting for MoS2 defect complexes. The sharp peaks have low spectral jitter (< 200 μeV), and are tuneable with gate-voltage and electron beam energy. Use of low-momentum electron irradiation, ease of processing, and high spatial resolution, will disrupt deterministic creation of high-quality SPEs.

cond-mat.mes-hall↗