arXiv subjects

Mandar M. Deshmukh

Publications and source records attributed to Mandar M. Deshmukh.

At least 37 records · Page 2Linked to original sources

arXiv2022

Nonlinear anomalous Hall effects probe topological phase-transitions in twisted double bilayer graphene

Nonlinear anomalous Hall effect is the Berry curvature dipole induced second-order Hall voltage or temperature difference in response to a longitudinal electric field or temperature gradient. These are the prominent Hall responses in time reversal symmetric systems. Here, we investigate the family of second-order nonlinear anomalous Hall effects, the electrical, thermoelectric and thermal nonlinear Hall effects in the moiré system of twisted double bilayer graphene. We demonstrate that the nonlinear anomalous Hall signals can be used to probe the topological phase-transitions in moiré systems, induced by a perpendicular electric field. Specifically, we show that the whole family of nonlinear anomalous Hall responses undergo a sign reversal across a topological phase-transition.

cond-mat.mes-hall↗

arXiv2022

Berry curvature dipole senses topological transition in a moiré superlattice

Topological aspects of electron wavefunction play a crucial role in determining the physical properties of materials. Berry curvature and Chern number are used to define the topological structure of electronic bands. While Berry curvature and its effects in materials have been studied, detecting changes in the topological invariant, Chern number, is challenging. In this regard, twisted double bilayer graphene (TDBG) has emerged as a promising platform to gain electrical control over the Berry curvature hotspots and the valley Chern numbers of its flat bands. In addition, strain induced breaking of the three-fold rotation (C3) symmetry in TDBG, leads to a non-zero first moment of Berry curvature called the Berry curvature dipole (BCD), which can be sensed using nonlinear Hall (NLH) effect. We reveal, using TDBG, that the BCD detects topological transitions in the bands and changes its sign. In TDBG, the perpendicular electric field tunes the valley Chern number and the BCD simultaneously allowing us a tunable system to probe the physics of topological transitions. Furthermore, we find hysteresis of longitudinal and NLH responses with electric field that can be attributed to switching of electric polarization in moiré systems. Such a hysteretic response holds promise for next-generation Berry curvature-based memory devices. Probing topological transitions, as we show, can be emulated in other 3D topological systems.

cond-mat.mes-hall↗

arXiv2022

Quantum noise limited microwave amplification using a graphene Josephson junction

Josephson junctions (JJ) and their tunable properties, including their nonlinearities, form the core of superconducting circuit quantum electrodynamics (cQED). In quantum circuits, low-noise amplification of feeble microwave signals is essential and the Josephson parametric amplifiers (JPA) are the widely used devices. The existing JPAs are based on Al-AlOx-Al tunnel junctions realized in a superconducting quantum interference device geometry, where magnetic flux is the knob for tuning the frequency. Recent experimental realizations of 2D van der Waals JJs provide an opportunity to implement various cQED devices with the added advantage of tuning the junction properties and the operating point using a gate potential. While other components of a possible 2D van der Waals cQED architecture have been demonstrated -- quantum noise limited amplifier, an essential component, has not been realized. Here we implement a quantum noise limited JPA, using a graphene JJ, that has linear resonance gate tunability of 3.5 GHz. We report 24 dB amplification with 10 MHz bandwidth and -130 dBm saturation power; performance on par with the best single-junction JPAs. Importantly, our gate tunable JPA works in the quantum-limited noise regime which makes it an attractive option for highly sensitive signal processing. Our work has implications for novel bolometers -- the low heat capacity of graphene together with JJ nonlinearity can result in an extremely sensitive microwave bolometer embedded inside a quantum noise-limited amplifier. In general, our work will open up exploration of scalable device architecture of 2D van der Waals materials by integrating a sensor with the quantum amplifier.

cond-mat.mes-hall↗

arXiv2022

Superconducting vortex-charge measurement using cavity electromechanics

As the magnetic field penetrates the surface of a superconductor, it results in the formation of flux-vortices. It has been predicted that the flux-vortices will have a charged vortex core and create a dipolelike electric field. Such a charge trapping in vortices is particularly enhanced in high-T$_c$ superconductors (HTS). Here, we integrate a mechanical resonator made of a thin flake of HTS Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ into a microwave circuit to realize a cavity-electromechanical device. Due to the exquisite sensitivity of cavity-based devices to the external forces, we directly detect the charges in the flux-vortices by measuring the electromechanical response of the mechanical resonator. Our measurements reveal the strength of surface electric dipole moment due to a single vortex core to be approximately 30~$|e|a_B$, equivalent to a vortex charge per CuO$_2$ layer of $3.7\times 10^{-2}|e|$, where $a_B$ is the Bohr radius and $e$ is the electronic charge.

cond-mat.supr-con↗

arXiv2021

Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals

We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport measurements. We can implement electron beam lithography by peeling off and transferring the resist for nanofabrication onto the irregular crystal. We fabricate the device electrodes with superconducting Niobium nitride (NbN) to control the current flow through the intended active area of the devices. Our device structure enables the reduction of the current jetting effect, and we demonstrate the negative magnetoresistance measurement as a function of angle. The high field magnetotransport show three distinct oscillation frequencies corresponding to the three bands at the Fermi level. Resistance measured in the low magnetic field shows the usual weak anti-localization dip near the zero-field -- a signature of a Weyl material. Our method of fabricating devices with superconducting electrodes provides a way to probe the electrical properties of macroscopic single crystals at the nanoscale. As we use conventional lithographic techniques for patterning, this method can be extended to a wide gamut of electrode materials and a large class of 3D quantum materials.

cond-mat.mes-hall↗

arXiv2021

Coplanar cavity for strong coupling between photons and magnons in van der Waals antiferromagnet

We investigate the performance of niobium nitride superconducting coplanar waveguide resonators towards hybrid quantum devices with magnon-photon coupling. We find internal quality factors ~ 20000 at 20 mK base temperature, in zero magnetic field. We find that by reducing film thickness below 100 nm internal quality factor greater than 1000 can be maintained up to parallel magnetic field of ~ 1 T and perpendicular magnetic field of ~ 100 mT. We further demonstrate strong coupling of microwave photons in these resonators, with magnons in chromium trichloride, a van der Waals antiferromagnet, which shows that these cavities serve as a good platform for studying magnon-photon coupling in 2D magnonics based hybrid quantum systems. We demonstrate strong magnon-photon coupling for both optical and acoustic magnon modes of an antiferromagnet.

cond-mat.mes-hall↗

arXiv2020

Bulk valley transport and Berry curvature spreading at the edge of flat bands

2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting the first experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path -- this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands.

cond-mat.mes-hall↗

arXiv2020

On-demand local modification of high-$T_\text{c}$ superconductivity in few unit-cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

High-temperature superconductors (HTS) are important for potential applications and for understanding the origin of strong correlations. Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO), a van der Waals material, offers a platform to probe the physics down to a unit-cell. Guiding the flow of electrons by patterning 2DEGS and oxide heterostructures has brought new functionality and access to new science. Similarly, modifying superconductivity in HTS locally, on a small length scale, will be of immense interest for superconducting electronics. Here we report transport studies on few unit-cell thick BSCCO and modify its superconductivity locally by depositing metal on the surface. Deposition of chromium (Cr) on the surface over a selected area of BSCCO results in insulating behavior of the patterned region. Cr locally depletes oxygen in CuO$_2$ planes and disrupts the superconductivity in the layers below. Our technique of modifying superconductivity is suitable for making sub-micron superconducting wires and more complex superconducting electronic devices.

cond-mat.supr-con↗

arXiv2020

Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalped for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tear-and-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalped for other shaping related applications for sensitive 2D materials.

physics.app-ph↗

arXiv2020

Tunable bandwidths and gaps in twisted double bilayer graphene system on the verge of correlations

We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the electric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.

cond-mat.mes-hall↗

arXiv2020

Evidence of standing spin-waves in a van der Waals magnetic material

Spin-waves have been studied for data storage, communication and logic circuits in the field of spintronics based on their potential to substitute electrons. Recent discovery of magnetism in two-dimensional (2D) systems such as monolayer CrI$_3$ and Cr$_2$Ge$_2$Te$_6$ has led to a renewed interest in such applications of magnetism in the 2D limit. Here we present direct evidence of standing spin-waves along with the uniform precessional resonance modes in van der Waals magnetic material, CrCl$_3$. Our experiment is the first direct observation of standing spin-wave modes, set up across a thickness of 20 $μ$m, in a van der Waals material. We detect standing spin-waves in the vicinity of both, optical and acoustic, branches of the antiferromagnetic resonance. We also observe magnon-magnon coupling, softening of resonance modes with temperature and extract the evolution of interlayer exchange field as a function of temperature.

cond-mat.mtrl-sci↗

arXiv2019

Elastic properties of few unit cell thick superconducting crystals of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

We present systematic measurements of the mechanical properties of few unit cell (UC) thick exfoliated crystals of a high-T$_c$ cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. We determine the elastic properties of these crystals by deformation using an atomic force microscope (AFM) at room temperature. With the spatial measurements of local compliance and their detailed modeling, we independently determine the Young's modulus of rigidity and the pre-stress. The Young's modulus of rigidity is found to be in the range of 22 GPa to 30 GPa for flakes with thickness from 5 UC to 18 UC. The pre-stress spreads over the range of 5 MPa - 46 MPa, indicating a run-to-run variation during the exfoliation process. The determination of Young's modulus of rigidity for thin flakes is further verified from recently reported buckling technique.

cond-mat.mes-hall↗

arXiv2019

Nanoelectromechanical resonators from high-T$_c$ superconducting crystals of Bi$_2$Sr$_2$Ca$_1$Cu$_2$O$_{8+δ}$

In this report, we present nanoelectromechanical resonators fabricated with thin exfoliated crystals of a high-T$_c$ cuprate superconductor Bi$_2$Sr$_2$Ca$_1$Cu$_2$O$_{8+δ}$. The mechanical readout is performed by capacitively coupling their motion to a coplanar waveguide microwave cavity fabricated with a superconducting alloy of molybdenum-rhenium. We demonstrate mechanical frequency tunability with external dc-bias voltage, and quality factors up to 36600. Our spectroscopic and time-domain measurements show that mechanical dissipation in these systems is limited by the contact resistance arising from resistive outer layers. The temperature dependence of dissipation indicates the presence of tunneling states, further suggesting that their intrinsic performance could be as good as other two-dimensional atomic crystals such as graphene.

cond-mat.mes-hall↗

arXiv2019

Non-trivial quantum oscillation geometric phase shift in a trivial band

The accumulation of non-trivial geometric phases in a material's response is often a tell-tale sign of a rich underlying internal structure. Studying quantum oscillations provides one of the ways to determine these geometrical phases, such as Berry's phase, that play a central role in topological quantum materials. We report on magneto-transport measurements in ABA-trilayer graphene, the band structure of which is comprised of a weakly gapped linear Dirac band, nested within a trivial quadratic band. Here we show Shubnikov-de Haas (SdH) oscillations of the quadratic band shifted by a phase that sharply departs from the expected 2$π$ Berry's phase. Our analysis reveals that, surprisingly, the anomalous phase shift is non-trivial and is inherited from the non-trivial Berry's phase of the linear Dirac band due to strong filling-enforced constraints between the linear and quadratic band Fermi surfaces. Given that many topological materials contain multiple bands, our work indicates how additional bands, which are thought to obscure the analysis, can actually be exploited to tease out the subtle effects of Berry's phase.

cond-mat.mes-hall↗

arXiv2018

Tension mediated nonlinear coupling between orthogonal mechanical modes of nanowire resonators

We study the nonlinear coupling between orthogonal flexural modes of doubly clamped InAs nanowire resonators. The two orthogonal modes are formed by the symmetry breaking and lifting of degeneracy of the fundamental mode. The presence of a Duffing nonlinearity emerges when a mode is driven to large amplitudes. In this regime the modes are coupled due to the tension induced from the large amplitude of oscillations and is reflected in the hysteretic response of the mode that is not strongly driven. We study the driven-driven response of the mechanical modes to elucidate the role of nonlinear mode coupling in such mechanical resonators. The dynamics of the coupled modes studied here could prove useful in technological applications such as nanowire based vectorial force sensing.

cond-mat.mes-hall↗

arXiv2018

Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene

The sequence of the zeroth Landau levels (LLs) between filling factors $ν$=-6 to 6 in ABA-stacked trilayer graphene (TLG) is unknown because it depends sensitively on the non-uniform charge distribution on the three layers of ABA-stacked TLG. Using the sensitivity of quantum Hall data on the electric field and magnetic field, in an ultraclean ABA-stacked TLG sample, we quantitatively estimate the non-uniformity of the electric field and determine the sequence of the zeroth LLs. We also observe anticrossings between some LLs differing by 3 in LL index, which result from the breaking of the continuous rotational to \textit{C}$_3$ symmetry by the trigonal warping.

cond-mat.mes-hall↗

arXiv2017

Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metallic gates. We have observed that the photovoltage increases with decreasing temperature indicating a dominant role of supercollision scattering. Our technique can also be extended to other 2D materials and to finer features that will lead to p-n junctions which span a large area, like a superlattice, that can generate a larger photoresponse. Our work creating abrupt p-n junctions is distinct from previous works that use a source-drain bias voltage with a single ionic gate creating a spatially graded p-n junction.

cond-mat.mes-hall↗

arXiv2016

Nanoscale electromechanics to measure thermal conductivity, expansion and interfacial losses

We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from thermal stresses that depend on temperature dependent thermal conductivity and expansion coefficient. The change in sign of the linear expansion coefficient of InAs is reflected in the resonant response of the system near a bath temperature of 20 K. Using finite element simulations to model the experimentally observed frequency shifts, we show that the thermal conductivity of a nanowire can be approximated in the 10-60 K temperature range by the empirical form $κ=b$T W/mK, where the value of $b$ for a nanowire was found to be $b=0.035$ W/mK$^2$, significantly lower than bulk values. Also, local heating allows us to independently vary the temperature of the nanowire relative to the clamping points pinned to the bath temperature. We suggest a loss mechanism (dissipation $\sim10^{-4}-10^{-5}$) originating from the interfacial clamping losses between the metal and the semiconductor nanostructure.

cond-mat.mes-hall↗