SearcharxivSearch

arXiv subjects

Manfred E. Ramsteiner

Publications and source records attributed to Manfred E. Ramsteiner.

2 recordsLinked to original sources

Complete Raman Tensor Determination in Birefringent $β$-Ga$_2$O$_3$ by Single-Stage Hyperspectral Analysis of Polarization Angle-Resolved Raman Spectra

The low symmetry of the monoclinic phase of Ga$_2$O$_3$ leads to pronounced optical anisotropy and, consequently, to birefringence, which strongly affects the Raman response. Because Raman scattering is fundamentally sensitive to the polarizability of a material, this anisotropy must be carefully accounted for in order to extract quantitative information - an effort that has only recently been shown to be feasible in such media. Here, we report Raman measurements from all three principal crystal planes $(100)$, $(010)$, and $(001)$, as well as from the $(\overline{2}01)$-plane of a $β$-Ga$_2$O$_3$ single crystal. By combining polarization angle-resolved Raman spectroscopy (PARRS) with a newly developed fitting procedure and explicitly accounting for birefringence, we achieve full spectral separation and quantitatively determine the energies and relative Raman tensor elements of all 15 Raman-active modes.

cond-mat.mtrl-sci

Spin-Polarized Electron Injection through an Fe/InAs Junction

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12 % at the temperature of 6.5 K and the external magnetic field of 10 T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface.

cond-mat.mtrl-sci