Hexagonal Boron Nitride Spin Defects for Quantum Photonics: Annealing-Free Generation by Krypton Ion Implantation
Controlled, reproducible generation of luminescent defect centres in hBN remains a key challenge for scalable quantum-photonic technologies. Here, we report Kr$^{+}$ ion implantation as a tunable, annealing-free, and chemically inert route to room-temperature near-infrared luminescent spin defects in hBN, requiring no pre- or post-implantation annealing. SRIM Monte Carlo simulations were used to optimise the parameters for 40 keV Kr$^{+}$ irradiation of hBN flakes. The implanted samples exhibit a stable near-infrared photoluminescence (PL) band centred at $\sim$830 nm whose intensity increases with implantation fluence over $10^{11}$-$10^{15}$ions/cm$^{2}$. Temperature-dependent PL measurements (20-300 K) reveal a linewidth broadening well described by a $T^{3}$ dependence, consistent with acoustic-phonon-mediated dephasing. Raman spectra show the characteristic $E_{2g}$ mode of pristine hBN at $\sim$1366 cm$^{-1}$ alongside an implantation-induced defect feature at $\sim$1295 cm$^{-1}$, confirming irradiation-induced lattice disorder. Electron paramagnetic resonance (EPR) measurements reveal a paramagnetic centre with a $g$-factor of 2.003, and density functional theory (DFT) calculations indicate that a spatially separated $V_{\mathrm{N}}$-$C_{\mathrm{B}}$ donor-acceptor pair complex is a viable origin of the observed optical and magnetic signatures. Overall, Kr$^{+}$ implantation offers an effective, annealing-free, and scalable platform for generating stable room-temperature luminescent defects, providing a promising route toward quantum photonics.