arXiv subjects

Manifa Noor

Publications and source records attributed to Manifa Noor.

2 recordsLinked to original sources

arXiv2025

Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2

Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the direct observation of nonuniform and nearly discrete vertical arrangements of dipoles in ZrO2 thin films consisting of closely spaced head-to-head (HH) and tail-to-tail (TT) charged 180 degree walls, each exhibiting a distinct bulk-like structure. These charged domain walls (CDWs) further compress the irreducibly narrow, laterally stacked domains vertically to a thickness of 1-2.75 nm, yielding in-plane domains with sub-nm2 footprints-among the smallest ever reported for any ferroelectric material. The HH and TT walls form due to their flat longitudinal optical (LO) polar bands and are electrostatically stabilized by bound-charge compensation via interstitial oxygen atoms, which act as natural structural defects at the HH walls. Moreover, these walls are predicted to be conducting and to exhibit ultralow propagation barriers, with HH walls (1.6 meV) being far more mobile than TT walls (22.3 meV), indicating strong potential for low-voltage, domain-wall-based nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2024

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure, chemistry, and electrical potentials in these devices are not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W / Hf$_{0.5}$Zr$_{0.5}$O$_{2-\delta}$ (HZO) / W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten sub-oxide interfacial layer formed at the bottom interface during fabrication which introduces a potential dip and leads to asymmetric switching fields. Additionally, the measured inner potential in HZO is consistent with the presence of about 20% oxygen vacancies and a negative built-in potential in HZO. These chemical and electrostatic details are important to characterize and tune to achieve high performance ferroelectric devices.

cond-mat.mtrl-sci↗