arXiv subjects

Manjari Garg

Publications and source records attributed to Manjari Garg.

6 recordsLinked to original sources

arXiv2025

Non-universal localization transition in the quantum Hall effect probed through broken-symmetry states of graphene

The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal character is not systematically observed in experiments, including very recent ones in extremely clean devices. Here we explore this non-universality by systematically measuring the localization length in broken-symmetry quantum Hall states of graphene. Depending on the nature and gap size of these states, we observe differences of up to a tenfold in the minimum localization length, accompanied by clear deviations from universal scaling. Our results, as well as the previously observed non-universality, are fully captured by a simple picture based on the co-existence of localized states from two successive sub-Landau levels.

cond-mat.mes-hall↗

arXiv2024

Vanishing bulk heat flow in the nu=0 quantum Hall ferromagnet in monolayer graphene

Under high perpendicular magnetic field and at low temperatures, graphene develops an insulating state at the charge neutrality point. This state, dubbed $\nu=0$, is due to the interplay between electronic interactions and the four-fold spin and valley degeneracies in the flat band formed by the $n=0$ Landau level. Determining the ground state of $\nu=0$, including its spin and valley polarization, has been a theoretical and experimental undertaking for almost two decades. Here, we present experiments probing the bulk thermal transport properties of monolayer graphene at $\nu=0$, which directly probe its ground state and collective excitations. We observe a vanishing bulk thermal transport, in contradiction with the expected ground state, predicted to have a finite thermal conductance even at very low temperature. Our result highlight the need for further investigations on the nature of $\nu=0$.

cond-mat.mes-hall↗

arXiv2022

Heat equilibration of integer and fractional quantum Hall edge modes in graphene

Hole-conjugate states of the fractional quantum Hall effect host counter-propagating edge channels which are thought to exchange charge and energy. These exchanges have been the subject of extensive theoretical and experimental works; in particular, it is yet unclear if the presence of integer quantum Hall edge channels stemming from fully filled Landau levels affects heat equilibration along the edge. In this letter, we present heat transport measurements in quantum Hall states of graphene demonstrating that the integer channels can strongly equilibrate with the fractional ones, leading to markedly different regimes of quantized heat transport that depend on edge electrostatics. Our results allow for a better comprehension of the complex edge physics in the fractional quantum Hall regime.

cond-mat.mes-hall↗

arXiv2021

Quantum Hall interferometry in triangular domains of marginally twisted bilayer graphene

Quantum Hall (QH) interferometry provides an archetypal platform for the experimental realization of braiding statistics of fractional QH states. However, the complexity of observing fractional statistics requires phase coherence over the length of the interferometer, as well as suppression of Coulomb charging energy. Here, we demonstrate a new type of QH interferometer based on marginally twisted bilayer graphene (mtBLG), with a twist angle $\theta$ $\approx$ $0.16$ $^{\circ}$. With the device operating in the QH regime, we observe distinct signatures of electronic Fabry-P\'{e}rot (FP) and Aharonov-Bohm (AhB)-oscillations of the magneto-thermopower in the density-magnetic field phase-space, at Landau level filling factors $\nu=4$,$8$. We find that QH interference effects are intrinsic to the triangular AB/BA domains in mtBLG that show diminished Coulomb charging effects. Our results demonstrate phase-coherent interference of QH edge modes without any additional gate-defined complex architecture, which may be beneficial in experimental realizations of non-Abelian braiding statistics.

cond-mat.mes-hall↗

arXiv2020

Excess entropy and breakdown of semiclassical description of thermoelectricity in twisted bilayer graphene close to half filling

In moiré systems with twisted bilayer graphene (tBLG), the amplification of Coulomb correlation effects at low twist angles ($θ$) is a result of nearly flat low-energy electronic bands and divergent density of states (DOS) at van Hove singularities (vHS). This not only causes superconductivity, Mott insulating states, and quantum anomalous Hall effect close to the critical (or magic) angle $θ= θ_{c} \approx 1.1^\circ$, but also unconventional metallic states that are claimed to exhibit non-Fermi liquid (NFL) excitations. However, unlike superconductivity and the correlation-induced gap in the DOS, unambiguous signatures of NFL effects in the metallic state remain experimentally elusive. Here we report simultaneous measurement of electrical resistivity ($ρ$) and thermoelectric power ($S$) in tBLG at $θ\approx 1.6^\circ$. We observe an emergent violation of the semiclassical Mott relation in the form of excess $S$ close to half-filling. The excess $S$ ($\approx 2$ $μ$V/K at low temperature $T \sim 10$ K) persists up to $\approx 40$ K, and is accompanied by metallic $T$-linear $ρ$ with transport scattering rate ($τ^{-1}$) of near-Planckian magnitude $τ^{-1} \sim k_{B}T/\hbar$. The combination of non-trivial electrical transport and violation of Mott relation provides compelling evidence of NFL physics intrinsic to tBLG, at small twist angle and half-filling.

cond-mat.mes-hall↗

arXiv2018

High-Temperature Photocurrent Mechanism of \b{eta}-Ga2O3 Based MSM Solar-Blind Photodetectors

High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited \b{eta}-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo current to dark current (PDCR) ratio of about 7100 was observed at room temperature (RT) while it had a value 2.3 at 250 °C at 10 V applied bias. A decline in photocurrent was observed from RT to 150 °C and then it increased with temperature up to 250 °C. The suppression of the blue band was also observed from 150 °C temperature which indicated that self-trapped holes in Ga2O3 became unstable. Temperature-dependent rise and decay times of carriers were analyzed to understand the photocurrent mechanism and persistence photocurrent at high temperatures. Coupled electron-phonon interaction with holes was found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of \b{eta}-Ga2O3 MSM deep UV photodetectors.

physics.app-ph↗