arXiv subjects

Manoj Settipalli

Publications and source records attributed to Manoj Settipalli.

5 recordsLinked to original sources

arXiv2023

Investigation of Phonon Lifetimes and Magnon-Phonon Coupling in YIG/GGG Hybrid Magnonic Systems in the Diffraction Limited Regime

Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are one of the most attractive candidates for quantum memories because of their long lifetime and high operating frequency. In this work, we establish a modeling approach that can be broadly used to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, where BAW phonons are excited in a gadolinium iron garnet (GGG) thick film via coupling with magnons in a patterned yttrium iron garnet (YIG) thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and their coupling strengths to magnons in planar and confocal YIG/GGG HBAR structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and discuss the effectiveness of the two methods to predict the HBAR phonons. We discuss strategies to improve the phonon lifetimes, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high, diffraction-limited, cooperativities and phonon lifetimes on the order of ~10^5 and ~10 milliseconds, respectively, could be achieved using a CHBAR structure with 10mum lateral YIG dimension. Additionally, the confocal HBAR structure will offer more than 100-fold improvement of integration density. A high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices.

cond-mat.mes-hall↗

arXiv2023

FluxGAN: A Physics-Aware Generative Adversarial Network Model for Generating Microstructures That Maintain Target Heat Flux

We propose a physics-aware generative adversarial network model, FluxGAN, capable of simultaneously generating high-quality images of large microstructures and description of their thermal properties. During the training phase, the model learns about the relationship between the local structural features and the physical processes, such as the heat flux in the microstructures, due to external temperature gradients. Once trained, the model generates new structural and associated heat flux environments, bypassing the computationally expensive modeling. Our model provides a cost effective and efficient approach over conventional modeling techniques, such as the finite element method (FEM), for describing the thermal properties of microstructures. The conventional approach requires computational modeling that scales with the size of the microstructure model, therefore limiting the simulation to a given size, resolution, and complexity of the model. In contrast, the FluxGAN model uses synthesis-by-part approach and generates arbitrary large size images at low computational cost. We demonstrate that the model can be utilized to generate designs of thermal sprayed coatings that satisfies target thermal properties. Furthermore, the model is capable of generating coating microstructures and physical processes in three-dimensional (3D) domain after being trained on two-dimensional (2D) examples. Our approach has the potential to transform the design and optimization of thermal sprayed coatings for various applications, including high-temperature and long-duration operation of gas turbines for aircraft or ground-based power generators.

cond-mat.dis-nn↗

arXiv2021

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

cond-mat.mtrl-sci↗

arXiv2019

Theoretical Prediction of Enhanced Thermopower in n-doped Si/Ge Superlattices using Effective Mass Approximation

We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based EMA has been employed so far to investigate the electronic properties of these superlattices, that does not accurately predict transport properties. We use the Boltzmann transport equation framework in combination with the EMA band analysis, and predict that significant improvement of the thermopower of n-doped Si/Ge superlattices can be achieved by controlling the lattice strain environment in these heterostructured materials. We illustrate that a remarkable degree of tunability in the Seebeck coefficient can be attained by growing the superlattices on various substrates, and varying the periods, and the compositions. Our calculations show up to ~3.2-fold Seebeck enhancement in Si/Ge [001] superlattices over bulk silicon, in the high-doping regime, breaking the Pisarenko relation. The thermopower modulations lead to an increase of power factor by up to 20%. Our approach is generically applicable to other superlattice systems, e.g., to investigate dimensional effects on electronic transport in two-dimensional nanowire and three dimensional nanodot superlattices. A material with high S potentially improves the energy conversion efficiency of thermoelectric applications and additionally, is highly valuable in various Seebeck metrology techniques including thermal, flow, radiation, and chemical sensing applications. We anticipate that the ideas presented here will have a strong impact in controlling electronic transport in various thermoelectric, opto-electronic, and quantum-enhanced materials applications.

cond-mat.mtrl-sci↗

arXiv2019

Modulation of Semiconductor Superlattice Thermopower Through Symmetry and Strain

In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlattices (SLs) beyond this relation. Using two independent theoretical modeling approaches, we show that new bands form due to the structural symmetry, and, the SL bands are highly tunable with epitaxial substrate strain. The band shifts lead to a modulated thermopower, with a peak $\sim$5-fold enhancement in strained Si/Ge SLs in the high doping regime.

cond-mat.mtrl-sci↗