arXiv subjects

Mansun Chan

Publications and source records attributed to Mansun Chan.

6 recordsLinked to original sources

arXiv2026

Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles

A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental improvements. This limitation fundamentally originates from the thickness-constrained switchable polarization and the intrinsic polarization ceiling of HfO2-based ferroelectrics. Here, we propose an all-ALD-grown vertical complementary FeRAM (VCF) architecture, in which the top and bottom stacked FeRAM cells maintain complementary polarization. This complementary dipole configuration converts the readout from a single-layer polarization response into a differential polarization summation, thereby amplifying the effective charge window without increasing the switching field of each individual layer or incurring area overhead. Viewed from top to bottom, an "up-down" polarization pair stores logic '1', whereas a "down-up" pair stores logic '0'. Using a complementary polarization write-read scheme, the VCF achieves an effective differential polarization above 100 uC/cm^2 and retains above 90 uC/cm^2 after 1e10 switching cycles without electrical breakdown. Robust retention (longer than 1e4 s at 85 degC) and strong disturb immunity are demonstrated, with an effective differential polarization above 80 uC/cm^2 under a V/3 scheme after 1e6 disturb pulses. Array-level operation is validated in a 5 x 5 selector-free crosspoint array. The performance enhancement of the VCF arises from the co-optimization of the all-ALD-grown process, device architecture, and operation scheme, enabling high density, a wide memory window, and strong reliability for scalable FeRAM integration.

cond-mat.mtrl-sci↗

arXiv2025

Contactless Modulation of Intralayer and Interlayer Excitons in MoS2/WSe2 heterostructures with Acoustoelectric Fields

This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS2/WSe2 heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties, a capability essential for the realization of next generation optoelectronic, quantum photonic, and excitonic devices. We identify two distinct modulable interlayer excitons in optical communication bands: IX$_{K\Gamma}$ in the O band (around 1300 nm) and IX$_{K\!-\!K}$ in the S band (around 1500 nm); these two excitons display a robust twist-angle-independent energy splitting of 120 meV, in agreement with density functional theory (DFT) calculations. The type-II band alignment induced by the SAW not only promotes efficient exciton dissociation but also enables direct and tunable modulation of photoluminescence via the formation of confined piezoelectric potential wells. Furthermore, by simultaneously generating in-plane and out-of-plane SAW fields, the platform achieves selective manipulation of intralayer and interlayer excitons, inducing quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons. These findings provide new insights into SAWexciton interactions in van der Waals heterostructures, broaden the operational spectral range, and establish pathways toward on-chip acousto-optic and quantum optoelectronic devices with advanced excitonic functionality.

physics.optics↗

arXiv2025

Enhanced Non-Ohmic Drain Resistance of 2DFETs at Cryogenic Temperature

The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic to non-ohmic behavior at cryogenic temperatures. In this work, we demonstrate that the shift is attributed to the asymmetric current reduction at the metal-semiconductor contact at low temperature. Under low drain bias, carriers tunnel from the source to the channel but diffuse to the drain side due to the channel-to-drain barrier, resulting in the current suppression. By studying the property of ohmic metal-semiconductor contact at different temperatures, we analyzed the mechanisms behind this phenomenon and the dependence on metal-to-semiconductor barrier height. The work opens the semiconductor physics of 2D material contact at cryogenic temperature and the importance of contact metal selection in the development of 2DFET at cryogenic temperature.

cond-mat.mes-hall↗

arXiv2019

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗

arXiv2019

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the stress effect. However, the threshold voltage was increased by the induced stress, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗

arXiv2016

Interlayer Conductance of Graphene with Multiple Transfer Process

Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers are observed with resistance variations of more than one order. With Raman spectroscopy we identify that the lattice angle between twisted graphene layers is the key variation source. The angular dependence and temperature dependence of the interlayer conductance suggest that a phonon assistant tunneling mechanism is valid for the interlayer transport of graphene prepared by multiple transfer process. We finally derive that the multi-layer graphene resistance shows an exponential-like distribution due to the random interlayer misalignments.

cond-mat.mes-hall↗