arXiv subjects

Manuel C. C. Pace

Publications and source records attributed to Manuel C. C. Pace.

4 recordsLinked to original sources

arXiv2026

A K-band Kinetic Inductance Parametric Amplifier Near the Quantum Limit

Advancing superconducting quantum devices to higher operating frequencies broadens their functionality and enables operation at elevated temperatures, but it also requires near-quantum-limited amplifiers beyond the few-gigahertz regime. Here we present a junction-free, kinetic-inductance parametric amplifier based on thin-film niobium nitride (NbN) operating at 23 GHz in the microwave K-band, achieving a gain up to 40 dB, a 100 MHz gain-bandwidth product, a 1 dB saturation input power of -85 dBm with 23 dB gain, and added noise no greater than 1.4 quanta for phase-preserving amplification. Leveraging the large superconducting gap of NbN, this architecture can be extended to even higher frequencies, supporting applications such as high-fidelity readout of millimeter-wave superconducting qubits and axion searches over an expanded mass window.

quant-ph↗

arXiv2025

All-nitride superconducting qubits based on atomic layer deposition

The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly being adopted as an industrial standard for thin-film growth, particularly in applications requiring precise control over layer thickness and composition. Here, we report superconducting qubits based on NbN/AlN/NbN trilayers deposited entirely by ALD. By varying the number of ALD cycles used to form the AlN barrier, we achieve Josephson tunneling through barriers of different thicknesses, with critical current density spanning seven orders of magnitude, demonstrating the uniformity and versatility of the process. Owing to the high critical temperature of NbN, transmon qubits based on these all-nitride trilayers exhibit microsecond-scale relaxation times, even at temperatures above 300 mK. These results establish ALD as a viable low-temperature deposition technique for superconducting quantum circuits and position all-nitride ALD qubits as a promising platform for operation at elevated temperatures.

quant-ph↗

arXiv2025

Fast Recovery of Niobium-based Superconducting Resonators after Laser Illumination

Interfacing superconducting microwave resonators with optical systems enables sensitive photon detectors, quantum transducers, and related quantum technologies. Achieving high optical pulse repetition is crucial for maximizing the device throughput. However, light-induced deterioration, such as quasiparticle poisoning, pair-breaking-phonon generation, and elevated temperature, hinders the rapid recovery of superconducting circuits, limiting their ability to sustain high optical pulse repetition rates. Understanding these loss mechanisms and enabling fast circuit recovery are therefore critical. In this work, we investigate the impact of optical illumination on niobium nitride and niobium microwave resonators by immersing them in superfluid helium-4 and demonstrate a three-order-of-magnitude faster resonance recovery compared to vacuum. By analyzing transient resonance responses, we provide insights into light-induced dynamics in these superconductors, highlighting the advantages of niobium-based superconductors and superfluid helium for rapid circuit recovery in superconducting quantum systems integrated with optical fields.

quant-ph↗

arXiv2022

Unifying Sørensen-Mølmer gate and Milburn gate with an optomechanical example

Sørensen-Mølmer gate and Milburn gate are two geometric phase gates, generating nonlinear self-interaction of a target mode via its interaction with an auxiliary mechanical mode, in the continuous and pulsed interaction regime, respectively. In this paper, we aim at unifying the two gates by demonstrating that Sørensen-Mølmer gate is the continuous limit of Milburn gate, emphasising the geometrical interpretation in the mechanical phase space. We explicitly consider imperfect gate parameters, focusing on relative errors in time for Sørensen-Mølmer gate and in phase angle increment for Milburn gate. We find that, although the purities of the final states increase for the two gates upon reducing the interaction strength together with traversing the mechanical phase space multiple times, the fidelities behave differently. We point out that, the difference exists because the interaction strength depends on the relative error when taking the continuous limit from the pulsed regime, thereby unifying the mathematical framework of the two gates. We demonstrate this unification in the example of an optomechanical system, where mechanical dissipation is also considered. We highlight that, the unified framework facilitates the new method of deriving the dynamics of the continuous interaction regime without solving differential equations.

quant-ph↗