arXiv subjects

Mao-Hua Du

Publications and source records attributed to Mao-Hua Du.

At least 19 recordsLinked to original sources

arXiv2025

Theoretical investigations of the origin of persistent luminescence in spinel oxides MgGa2O4 and MgAl2O4

MgGa2O4 and MgAl2O4 have attracted significant interest due to their unique intrinsic persistent luminescence, offering promising potential for various applications. In this paper, from the perspective of defect physics, we systemically investigate the origin of persistent luminescence phenomena in pristine MgGa2O4 and MgAl2O4, employing accurate hybrid functional calculations. Our results show that vacancies and antisite defects involving the two cations are the dominant point defects in both materials. Our calculated optical excitation and emission peaks associated with the MgGa defect agree well with the experimentally observed blue luminescence peak at about 2.9 eV in MgGa2O4. In MgAl2O4, the intradefect optical transition within the VO-MgAl donor-acceptor defect complex is identified as a likely origin for the observed 2.7 eV emission peak. Furthermore, the calculated radiative recombination coefficients of MgGa and VO-MgAl are significantly higher than their nonradiative counterparts, supporting their roles as efficient luminescent centers. Our results regarding the optical processes of oxygen vacancy VO in MgGa2O4 and MgAl2O4 are also in good agreement with experimental results. Based on the calculated defect thermodynamic transition levels, the intrinsic persistent luminescence in MgGa2O4 and MgAl2O4 may be attributed to electron traps, GaMg and VO, in the former and a hole trap, MgAl, in the latter. Donor-acceptor defect complexes (VO+VMg and VO+VGa) are also found to serve as effective carrier trapping centers in MgGa2O4. The calculated trap depths are also consistent with thermoluminescence spectroscopy measurements.

cond-mat.mtrl-sci↗

arXiv2023

Procedures for assessing the stability of proposed topological materials

We investigate the stability of MnPb$_{2}$Bi$_{2}$Te$_{6}$ (MPBT), which is predicted to be a magnetic topological insulator (TI), using density functional theory calculations. Our analysis includes various measures such as enthalpies of formation, Helmholtz free energies, defect formation energies, and dynamical stability. Our thermodynamic analysis shows that the phonon contribution to the energy gain from finite temperature is estimated to be less than 10~meV/atom, which may not be sufficient to stabilize MPBT at high temperatures, even with the most favorable reactions starting from binaries. While MPBT is generally robust against the formation of various defects, we find that anti-site defect formation of $\text{Mn}_{\text{Pb}}$ is the most likely to occur, with corresponding energy less than 60~meV. This can be attributed to the significant energy cost from compressive strain at the PbTe layer. Our findings suggest that MPBT is on the brink of stability in terms of thermodynamics and defect formation, underscoring the importance of conducting systematic analyses of the stability of proposed TIs, including MPBT, for their practical utilization. This study offers valuable insights into the design and synthesis of desirable magnetic TI materials with robust stabilities.

cond-mat.mtrl-sci↗

arXiv2022

Non-volatile Electric Control of Magnetic and Topological Properties of MnBi2Te4 Thin Films

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi2Te4 on ferroelectric In2Se3 or In2Te3, where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi2Te4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.

cond-mat.mtrl-sci↗

arXiv2022

Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films

Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.

cond-mat.mtrl-sci↗

arXiv2022

Correlative nanoscale imaging of strained hBN spin defects

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.

cond-mat.mes-hall↗

arXiv2021

Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution

In order to tune the magnetic properties of the cleavable high-Curie temperature ferromagnet Fe$_{5-x}$GeTe$_2$, the effect of increasing the electron count through arsenic substitution has been investigated. Small additions of arsenic (2.5 and 5%) seemingly enhance ferromagnetic order in polycrystalline samples by quenching fluctuations on one of the three magnetic sublattices, whereas larger As concentrations decrease the ferromagnetic Curie temperature ($T_{\rm C}$) and saturation magnetization. This work also describes the growth and characterization of Fe$_{4.8}$AsTe$_2$ single crystals that are structurally analogous to Fe$_{5-x}$GeTe$_2$ but with some phase stability complications. Magnetization measurements reveal dominant antiferromagnetic behavior in Fe$_{4.8}$AsTe$_2$ with a Néel temperature of $T_{\rm N}$ $\approx$42K. A field-induced spin-flop below $T_{\rm N}$ results in a switch from negative to positive magnetoresistance, with significant hysteresis causing butterfly-shaped resistance loops. In addition to reporting the properties of Fe$_{4.8}$AsTe$_2$, this work shows the importance of manipulating the individual magnetic sublattices in Fe$_{5-x}$GeTe$_2$ and motivates further efforts to control the magnetic properties in related materials by fine tuning of the Fermi energy or crystal chemistry.

cond-mat.mtrl-sci↗

arXiv2021

Magnetic properties of the Shastry-Sutherland lattice material BaNd$_2$ZnO$_5$

We investigate the physical properties of the Shastry-Sutherland lattice material BaNd$_2$ZnO$_5$. Neutron diffraction, magnetic susceptibility, and specific heat measurements reveal antiferromagnetic order below 1.65 K. The magnetic order is found to be a 2-$\boldsymbol{Q}$ magnetic structure with the magnetic moments lying in the Shastry-Sutherland lattice planes comprising the tetragonal crystal structure of BaNd$_2$ZnO$_5$. The ordered moment for this structure is 1.9(1) $μ_B$ per Nd ion. Inelastic neutron scattering measurements reveal that the crystal field ground state doublet is well separated from the first excited state at 8 meV. The crystal field Hamiltonian is determined through simultaneous refinement of models with both the LS coupling and intermediate coupling approximations to the inelastic neutron scattering and magnetic susceptibility data. The ground state doublet indicates that the magnetic moments lie primarily in the basal plane with magnitude consistent with the size of the determined ordered moment.

cond-mat.str-el↗

arXiv2021

Hierarchical excitations from correlated spin tetrahedra on the breathing pyrochlore lattice

The hierarchy of the coupling strengths in a physical system often engenders an effective model at low energies where the decoupled high-energy modes are integrated out. Here, using neutron scattering, we show that the spin excitations in the breathing pyrochlore lattice compound CuInCr$_4$S$_8$ are hierarchical and can be approximated by an effective model of correlated tetrahedra at low energies. At higher energies, intra-tetrahedron excitations together with strong magnon-phonon couplings are observed, which suggests the possible role of the lattice degree of freedom in stabilizing the spin tetrahedra. Our work illustrates the spin dynamics in CuInCr$_4$S$_8$ and demonstrates a general effective-cluster approach to understand the dynamics on the breathing-type lattices.

cond-mat.str-el↗

arXiv2020

Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism

We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0 4.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic transitions around 25 K, and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2020

Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$.

cond-mat.mtrl-sci↗

arXiv2020

Tuning Magnetic Order in the van der Waals Metal Fe5GeTe2 by Cobalt Substitution

Fe5-xGeTe2 is a van der Waals material with one of the highest reported bulk Curie temperatures, $T_C$ ~ 310K. In this study, theoretical calculations and experiments are utilized to demonstrate that the magnetic ground state is highly sensitive to local atomic arrangements and the interlayer stacking. Cobalt substitution is found to be an effective way to manipulate the magnetic properties while also increasing the ordering temperature. In particular, cobalt substitution up to 30% enhances $T_C$ and changes the magnetic anisotropy, while approximately 50% cobalt substitution yields an antiferromagnetic state. Single crystal x-ray diffraction evidences a structural change upon increasing the cobalt concentration, with a rhombohedral cell observed in the parent material and a primitive cell observed for ~46% cobalt content relative to iron. First principles calculations demonstrate that it is a combination of high cobalt content and the concomitant change to primitive layer stacking that produces antiferromagnetic order. These results illustrate the sensitivity of magnetism in Fe5-xGeTe2 to composition and structure, and emphasize the important role of structural order/disorder and layer stacking in cleavable magnetic materials.

cond-mat.mtrl-sci↗

arXiv2020

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4; such strain is further enhanced in MnBi4Te7, giving rise to even higher BiMn density. The abundance of intrinsic BiMn donors results in degenerate n-type conductivity under the Te-poor growth condition. Our calculations suggest that growths in a Te-rich condition can lower the Fermi level, which is supported by our transport measurements. We further show that the internal strain can also enable efficient doping by large-size-mismatched substitutional NaMn acceptors, which can compensate BiMn donors and lower the Fermi level. Na doping may pin the Fermi level inside the bulk band gap even at the Te-poor limit in MnBi2Te4. Furthermore, facile defect formation in MnSb2Te4 and its implication in Sb doping in MnBi2Te4 as well as the defect segregation in MnBi4Te7 are discussed. The defect engineering and doping strategies proposed in this paper will stimulate further studies for improving synthesis and for manipulating magnetic and topological properties in MnBi2Te4, MnBi4Te7, and related compounds.

cond-mat.mtrl-sci↗

arXiv2020

Fantastic flat bands and where to find them: The CoSn-type compounds

Quantum interference on the kagome lattice generates electronic bands with narrow bandwidth, called flat bands. Crystal structures incorporating this lattice can host strong electron correlations with non-standard ingredients, but only if these bands lie at the Fermi level. In the six compounds with the CoSn structure type (FeGe, FeSn, CoSn, NiIn, RhPb, and PtTl) the transition metals form a kagome lattice. The two iron variants are robust antiferromagnets so we focus on the latter four and investigate their thermodynamic and transport properties. We consider these results and calculated band structures to locate and characterize the flat bands in these materials. We propose that CoSn and RhPb deserve the community's attention for exploring flat band physics.

cond-mat.str-el↗

arXiv2020

Robust ferromagnetism in highly strained SrCoO3 thin films

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

cond-mat.str-el↗

arXiv2019

Deciphering the Effect of Traps on Electronic Charge Transport Properties of Methylammonium Lead Tribromide

Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP devices. Yet, the parameters of defects and their interplay with free charge carriers remain unclear. In this study we explore the dynamics of free holes in methylammonium lead tribromide (MAPbBr3) single crystals using the time of flight (ToF) current spectroscopy. By combining the current waveform (CWF) ToF spectroscopy and the Monte Carlo (MC) simulation, three energy states were detected in the band gap of MAPbBr3. Additionally, we found the trapping and detrapping rates of free holes ranging from a few us to hundreds of us and, contrary to previous studies, a strong detrapping activity was revealed. It was shown that these traps have a significant impact on the transport properties of MAPbBr3 single crystal devices, including drift mobility and mobility-lifetime product. To demonstrate the impact of traps on the delay of free carriers, we developed a new model of the effective mobility valid for the case of multiple traps in a semiconductor. Our results provide a new insight on charge transport properties of OMHP semiconductors, which is required for further development of this class of optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2019

A Class of Compounds Featuring Frustrated Triangular Magnetic Lattice CsRESe$_2$ (RE=La-Lu): Quantum Spin-Liquid Candidates

A triangular lattice selenide series of rare earth (RE), CsRESe2, were synthesized as large single crystals using a flux growth method. This series stabilized in either trigonal (R-3m) or hexagonal (P63/mmc) crystal systems. Physical properties of CsRESe2 were explored by magnetic susceptibility and heat capacity measurements down to 0.4 K. Antiferromagnetic interaction was observed in all magnetic compounds, while no long-range magnetic order was found, indicating the frustrated magnetism. CsDySe2 presents spin freezing at 0.7 K, revealing a spin-glass state. CsCeSe2 and CsYbSe2 present broad peaks at 0.7 K and 1.5 K in the magnetization, respectively, suggesting the short-range interactions between magnetic rare earth ions. The lack of signature for long-range magnetic order and spin freezing down to 0.4 K in these compounds (RE = Ce, Yb) implies their candidacy for quantum spin liquid state.

cond-mat.mtrl-sci↗

arXiv2019

Impact of Metal ns2 Lone Pair on Luminescence Efficiency in Low-Dimensional Halide Perovskites

Based on first-principles calculations, we show that chemically active metal ns2 lone pairs play an important role in exciton relaxation and dissociation in low-dimensional halide perovskites. We studied excited-state properties of several recently discovered luminescent all-inorganic and hybrid organic-inorganic zero-dimensional (0D) Sn and Pb halides. The results show that, despite the similarity in ground-state electronic structure between Sn and Pb halide perovskites, the chemically more active Sn2+ lone pair leads to stronger excited-state structural distortion and larger Stokes shift in Sn halides. The enhanced Stokes shift hinders excitation energy transport, which reduces energy loss to defects and increases the photoluminescence quantum efficiency (PLQE). The presence of the ns2 metal cations in the 0D halide perovskites also promotes the exciton dissociation into electron and hole polarons especially in all-inorganic compounds, in which the coupling between metal-halide clusters is significant.

cond-mat.mtrl-sci↗

arXiv2018

Intrinsic defect properties in halide double perovskites for optoelectronic applications

Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi level pinning. We reveal the ideal growth conditions to grow p-type Cs$_2$AgInCl$_6$ and Cs$_2$AgBiCl$_6$ as well as semi-insulating Cs$_2$AgBiBr$_6$ with low trap density for targeted photovoltaic or visible-light/radiation detection application.

cond-mat.mtrl-sci↗