arXiv subjects

Maohai Xie

Publications and source records attributed to Maohai Xie.

15 recordsLinked to original sources

arXiv2024

Broadband measurement of Feibelman's quantum surface response functions

The Feibelman $d$-parameter, a mesoscopic complement to the local bulk permittivity, describes quantum optical surface responses for interfaces, including nonlocality, spill-in and-out, and surface-enabled Landau damping. It has been incorporated into the macroscopic Maxwellian framework for convenient modeling and understanding of nanoscale electromagnetic phenomena, calling for the compilation of a $d$-parameter database for interfaces of interest in nano-optics. However, accurate first-principles calculations of $d$-parameters face computational challenges, whereas existing measurements of $d$-parameters are scarce and restricted to narrow spectral windows. We demonstrate a general broadband ellipsometric approach to measure $d$-parameters at a gold--air interface across the visible--ultraviolet regimes. Gold is found to spill in and spill out at different frequencies. We also observe gold's Bennett mode, a surface-dipole resonance associated with a pole of the $d$-parameter, around 2.5 eV. Our measurements give rise to and are further validated by the passivity and Kramers--Kronig causality analysis of $d$-parameters. Our work advances the understanding of quantum surface response and may enable applications like enhanced electron field emission.

physics.optics↗

arXiv2024

Prediction of topotactic transition from black to blue phosphorus induced by surface Br adsorption

Based on first-principles calculations, we propose a potential access to the yet unrealized freestanding blue phosphorus (blueP) through transformation of black phosphorus (blackP) induced by surface bromine (Br) adsorption. Formation of the Br-P bonds disrupts the original sp3 configurations in blackP, generates unpaired pz electrons and induces a structural transformation that results in blueP formation by re-pairing the pz orbitals. Ab initio molecular dynamics simulations confirm that randomly adsorbed Br adatoms on bilayer blackP spontaneously diffuse into specific patterns to render the emergence of the blueP phase. The expected obtainment Br-passivated blueP nanoribbons exhibit tunable band gaps in a wide range and high carrier mobilities of the order of 1000 cm2V-1s-1. This study provides an opportunity to fabricate blueP through the conversion from blackP by tuning its surface chemistry.

cond-mat.mtrl-sci↗

arXiv2020

Distinct Topological Surface States on the Two Terminations of MnBi$_4$Te$_7$

The recent discovered intrinsic magnetic topological insulator MnBi2Te4 have been met with unusual success in hosting emergent phenomena such as the quantum anomalous Hall effect and the axion insulator states. However, the surface-bulk correspondence of the Mn-Bi-Te family, composed by the superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3 ...) layered structure, remains intriguing but elusive. Here, by using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) techniques, we unambiguously assign the two distinct surface states of MnBi4Te7 (n = 1) to the quintuple-layer (QL) Bi2Te3 termination and the septuple-layer (SL) MnBi2Te4 termination, respectively. A comparison of the experimental observations with theoretical calculations reveals the diverging topological behaviors, especially the hybridization effect between magnetic and nonmagnetic layers, on the two terminations: a gap on the QL termination originating from the topological surface states of the QL hybridizing with the bands of the beneath SL, and a gapless Dirac-cone band structure on the SL termination with time-reversal symmetry. The quasi-particle interference patterns further confirm the topological nature of the surface states for both terminations, continuing far above the Fermi energy. The QL termination carries a spin-helical Dirac state with hexagonal warping, while at the SL termination, a strongly canted helical state from the surface lies between a pair of Rashba-split states from its neighboring layer. Our work elucidates an unprecedented hybridization effect between the building blocks of the topological surface states, and also reveals the termination-dependent time-reversal symmetry breaking in a magnetic topological insulator, rendering an ideal platform to realize the half-integer quantum Hall effect and relevant quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2020

Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers

Mirror twin boundary (MTB) brings unique 1D physics and properties into two-dimensional transition metal dichalcogenides (TMDCs), but they were rarely observed in non-Mo-based TMDCs. Herein, by post-growth Nb doping, high density 4|4E-W and 4|4P-Se MTBs were introduced into molecular beam epitaxy (MBE) grown WSe2 monolayers. Of them, 4|4E-W MTB with a novel structure was discovered experimentally for the first time, while 4|4P-Se MTBs present a random permutations of W and Nb, forming a 1D alloy system. Comparison between the doped and non-doped WSe2 confirmed that Nb dopants are essential for MTB formation. Furthermore, quantitative statistics reveal the areal density of MTBs is directly proportional to the concentration of Nb dopants. To unravel the injection pathway of Nb dopants, first-principles calculations about a set of formation energies for excess Nb atoms with different configurations were conducted, based on which a model explaining the origin of MTBs introduced by excess metal was built. We conclude that the formation of MTBs is mainly driven by the collective evolution of excess Nb atoms introduced into the lattice of host WSe2 crystal and subsequent displacement of metal atoms (W or Nb). This study provides a novel way to tailor the MTBs in 2D TMDC materials via proper metal doping and presents a new opportunities for exploring the intriguing properties.

cond-mat.mtrl-sci↗

arXiv2019

Quantum Confined Tomonaga-Luttinger Liquid in MoSe2 Twin Domain Boundaries

There have been conflicting reports on the electronic properties of twin domain boundaries (DBs) in MoSe2 monolayer, including the quantum well states, charge density wave, and Tomonaga-Luttinger liquid (TLL). Here we employ low-temperature scanning tunneling spectroscopy to reveal both the quantum confinement effect and signatures of TLL in the one-dimensional DBs. The data do not support the CDW at temperatures down to ~5 K.

cond-mat.mes-hall↗

arXiv2017

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2

Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in hetero-structures with continuously varied stacking orders, which obscure the revelation of the intrinsic role of a certain stacking order in its physical properties. Here, we introduce inversion-domain-boundaries into molecular-beam-epitaxy grown MoSe2 homo-bilayers, which induce unusual-fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences. Unusual low-symmetric stacking orders were observed using transmission electron microscopy and detailed geometries were identified by density functional theory. A linear relation was also revealed between interlayer distance and stacking energy. These stacking sequences yield various energy alignments between the valence states at Γ and K, showing stacking dependent bandgaps and valence band tail states in the measured scanning tunneling spectroscopy. These results may benefit the design of two-dimensional multilayers with manipulable stacking orders.

cond-mat.mtrl-sci↗

arXiv2017

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor showing superior transport and optical properties. Few-layer or SL black phosphorus has been successfully isolated by exfoliation from bulk crystals and extensively studied thereof for its electronic and optical properties. Blue phosphorus (blueP), an allotrope of black phosphorus where atoms are arranged in a more flat atomic configuration, has been recently suggested by theory to exist in the SL form on some substrates. In this work, we report the formation of a blueP-like epilayer on Au(111) by molecular-beam epitaxy. In particular, we uncover by scanning tunneling microscopy (STM) one-dimensional (1D) atomic chains at low coverage, which develop into more compact islands or patches of $(\sqrt{3}\times\sqrt{3})R30^\circ$ structure with increasing coverage before blueP-like islands nucleate and grow. We also note an interesting growth characteristic where the $(\sqrt{3}\times\sqrt{3})R30^\circ$ surface at intermediate coverage tends to phase-separate into locally low-coverage 1D chain and high-coverage blueP-like structures, respectively. This experiment thus not only lends a support of the recently proposed half-layer by half-layer (HLBHL) growth mechanism but also reveals the kinetic details of blueP growth processes.

cond-mat.mes-hall↗

arXiv2017

Ultrathin layers of beta-tellurene grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

Monolayer Tellurium (Te) or tellurene has been suggested by a recent theory as a new two-dimensional (2D) system with great electronic and optoelectronic promises. Here we present an experimental study of epitaxial Te deposited on highly oriented pyrolytic graphite (HOPG) substrate by molecular-beam epitaxy. Scanning tunneling microscopy of ultrathin layers of Te reveals rectangular surface cells with the cell size consistent with the theoretically predicted beta-tellurene, whereas for thicker films, the cell size is more consistent with that of the (10-10) surface of bulk Te crystal. Scanning tunneling spectroscopy measurements show the films are semiconductors with the energy bandgaps decreasing with increasing film thickness, and the gap narrowing occurs predominantly at the valance-band maximum (VBM). The latter is understood by strong coupling of states at the VBM but a weak coupling at conduction band minimum (CBM) as revealed by density functional theory calculations.

cond-mat.mtrl-sci↗

arXiv2016

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as the hexagonal (2H) and distorted octahedral or monoclinic (1T') phases. The different structures show vastly different properties. For example, the 2H MoTe2 ML is a direct-gap semiconductor while 1T' MoTe2 is a semi-metal. It has been suggested that the formation energies between 2H and 1T' MoTe2 differ very little, so there is a high chance to tune the structures of MoTe2 and thereby to bring in new applications such as phase-change electronics. In this work, we report growth of both 2H and 1T' MoTe2 ML by molecular-beam epitaxy (MBE). We demonstrate the tunability of the structural domains in epitaxial MoTe2 by changing the growth conditions of MBE and by annealing. We present experimental and theoretical evidences showing the important role of Te surface adsorption in promoting and stabilizing the otherwise metastable 1T'-MoTe2 during MBE.

cond-mat.mtrl-sci↗

arXiv2016

Induced robust topological order on an ordinary insulator hetero-structured with a strong topological insulator

Topological states of matter originate from distinct topological electronic structures of materials. As for strong topological insulators (STIs), the topological surface (interface) is a direct consequence of electronic structure transition between materials categorized to different topological genus. Therefore, it is fundamentally interesting if such topological character can be manipulated. Besides tuning the crystal field and the strength of spin-orbital coupling (e.g., by external strain, or chemical doping), there is currently rare report on topological state induced in ordinary insulators (OIs) by the heterostructure of OI/STI. Here we report the observation of a Dirac cone topological surface state (TSS) induced on the Sb2Se3 layer up to 15 nm thick in the OI/STI heterostructure, in sharp contrast with the OI/OI heterostructure where no sign of TSS can be observed. This is evident for an induced topological state in an OI by heterostructure.

cond-mat.mtrl-sci↗

arXiv2015

Observation of intervalley quantum interference in epitaxial monolayer WSe2

Monolayer (ML) transition metal dichalcogenides (TMDs) have been attracting great research attentions lately for their extraordinary properties, in particular the exotic spin-valley coupled electronic structures that promise future spintronic and valleytronic applications1-3. The energy bands of ML TMDs have well separated valleys that constitute effectively an extra internal degree of freedom for low energy carriers3-12. The large spin-orbit coupling in the TMDs makes the spin index locked to the valley index, which has some interesting consequences such as the magnetoelectric effects in 2H bilayers13. A direct experimental characterization of the spin-valley coupled electronic structure can be of great interests for both fundamental physics and device applications. In this work, we report the first experimental observation of the quasi-particle interference (QPI) patterns in ML WSe2 using low-temperature (LT) scanning tunneling microscopy/spectroscopy (STM/S). We observe intervalley quantum interference involving the Q-valleys in the conduction band due to spin-conserved scattering processes, while spin-flip intervalley scattering is absent. This experiment establishes unequivocally the presence of spin-valley coupling and affirms the large spin-splitting at the Q valleys. Importantly, the inefficient spin-flip intervalley scattering implies long valley and spin lifetime in ML WSe2, which represents a key figure of merit for valley-spintronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy

Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer (ML) films, networks of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other. There are also isolated ones in the bottom layer without companion in the top-layer and are detected by STM/S through quantum tunneling of the defect states through the barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML film reveals some common features as well as differences. Quantum confinement of the defect states is indicated. Point defects in BL MoSe2 are also observed by STM/S, where ionization of the donor defect by the tip-induced electric field is evidenced. These results are of great fundamental interests as well as practical relevance of devices made of MoSe2 ultrathin layers.

cond-mat.mtrl-sci↗

arXiv2014

Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations

We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe2 grown by molecular-beam epitaxy. High-resolution transmission electron microscopy and scanning tunneling microscopy and spectroscopy (STM/STS) studies show these 1D modes are mid-gap states at inversion domain boundaries. STM/STS measurements further reveal intensity undulations of the metallic modes, presumably arising from the superlattice potentials due to moire pattern and the quantum confinement effect. A dense network of the metallic modes with high density of states is of great potential for heterocatalysis applications. The interconnection of such mid-gap 1D conducting channels may also imply new transport behaviors distinct from the 2D bulk.

cond-mat.mtrl-sci↗

arXiv2011

Interplay between topological insulators and superconductors

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films contacted by superconducting (In, Al and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi2Se3 film strongly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are the consequence of the interplay between the Cooper pairs of the electrodes and the spin polarized current of the surface states in Bi2Se3.

cond-mat.mtrl-sci↗

arXiv2011

Current induced anisotropic magnetoresistance in topological insulator films

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurement, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Measurements under in-plane magnetic field, along and perpendicular to the bias current show opposite magnetoresistance. We argue that this contrasting behavior is related to the locking of the spin and current direction providing evidence for helical spin structure of the topological surface states.

cond-mat.mtrl-sci↗