arXiv subjects

Marc A. Kastner

Publications and source records attributed to Marc A. Kastner.

24 records · Page 2Linked to original sources

arXiv2016

Competing ν= 5/2 fractional quantum Hall states in confined geometry

Some theories predict that the filling factor 5/2 fractional quantum Hall state can exhibit non-Abelian statistics, which makes it a candidate for fault-tolerant topological quantum computation. Although the non-Abelian Pfaffian state and its particle-hole conjugate, the anti-Pfaffian state, are the most plausible wave functions for the 5/2 state, there are a number of alternatives with either Abelian or non-Abelian statistics. Recent experiments suggest that the tunneling exponents are more consistent with an Abelian state rather than a non-Abelian state. Here, we present edge-current-tunneling experiments in geometrically confined quantum point contacts, which indicate that Abelian and non-Abelian states compete at filling factor 5/2. Our results are consistent with a transition from an Abelian state to a non-Abelian state in a single quantum point contact when the confinement is tuned. Our observation suggests that there is an intrinsic non-Abelian 5/2 ground state, but that the appropriate confinement is necessary to maintain it. This observation is important not only for understanding the physics of the 5/2 state, but also for the design of future topological quantum computation devices.

cond-mat.mes-hall↗

arXiv2015

Conductance noise in nano-patterned PbS quantum dot arrays

We report unexpectedly large noise in the current from nanopatterned PbS quantum dot films. The noise is proportional to the current when the latter is varied by changing the source-drain bias, gate voltage or temperature. The spectral density of the noise is given by a power law in frequency at room temperature, but remarkably, we observe a transition to telegraph noise at lower temperatures. The probability distribution of the off-times follows a power law, reminiscent of fluorescence blinking in colloidal quantum dot systems. Our results are understood simply in terms of conductance fluctuations in a quasi-one dimensional percolation path, and more rigorously in terms of a model in which charge through the film is transmitted in discrete time intervals, with the distribution of intervals completely described by Levy statistics.

cond-mat.mes-hall↗

arXiv2014

Electric-field driven insulating to conducting transition in a mesoscopic quantum dot lattice

We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an insulating state at low bias voltages to a conducting state at high bias voltages. The insulating state shows simply activated temperature dependence, with strongly gate voltage dependent activation energy. At low temperatures the transition between the insulating and conducting states becomes very abrupt and shows strong hysteresis. The high-bias behavior suggests underdamped transport through a periodic washboard potential resulting from collective motion.

cond-mat.mes-hall↗

arXiv2010

The Effect of Electrostatic Screening on a Nanometer Scale Electrometer

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We show that despite this screening effect, the electrometer is still very sensitive to its electrostatic environment, even at room temperature.

cond-mat.mes-hall↗

arXiv2005

Multi-island single-electron devices from self-assembled colloidal nanocrystal chains

We report the fabrication of multi-island single-electron devices made by lithographic contacting of self-assembled alkanethiol-coated gold nanocrystals. The advantages of this method, which bridges the dimensional gap between lithographic and NC sizes, are (1) that all tunnel junctions are defined by self-assembly rather than lithography and (2) that the ratio of gate capacitance to total capacitance is high. The rich electronic behavior of a double-island device, measured at 4.2 K, is predicted in detail by combining finite element and Monte Carlo simulations with the standard theory of Coulomb blockade with very few adjustable parameters.

cond-mat.other↗

arXiv2002

Electronic transport in films of colloidal CdSe nanocrystals

We present results for electronic transport measurements on large three-dimensional arrays of CdSe nanocrystals. In response to a step in the applied voltage, we observe a power-law decay of the current over five orders of magnitude in time. Furthermore, we observe no steady-state dark current for fields up to 10^6 V/cm and times as long as 2x10^4 seconds. Although the power-law form of the decay is quite general, there are quantitative variations with temperature, applied field, sample history, and the material parameters of the array. Despite evidence that the charge injected into the film during the measurement causes the decay of current, we find field-scaling of the current at all times. The observation of extremely long-lived current transients suggests the importance of long-range Coulomb interactions between charges on different nanocrystals.

cond-mat.mes-hall↗