arXiv subjects

Marc Tornow

Publications and source records attributed to Marc Tornow.

11 recordsLinked to original sources

arXiv2026

Substrate-metal interface engineering enhances TaN/Ta thin film superconducting resonator performance

Tantalum has been demonstrated as a promising material for superconducting qubits. However, comparatively little attention has been given to its nitrides. Tantalum nitride exhibits a range of stoichiometries, resulting in a variety of material properties, including both superconducting and non-superconducting phases. Owing to this versatility, tantalum nitrides can serve multiple purposes in superconducting qubits: as seed layers for alpha-Ta growth, as a superconducting base material and as a non-superconducting barrier in the Josephson junction. In this study, we explore the performance of superconducting TaN and Ta thin film combinations on silicon substrates in terms of internal quality factor Qi. We find that standalone TaN films exhibit Qi values of about 1.5x10^5 at 100mK in the single-photon regime. Surprisingly, a resonator made from Ta grown on a few-nanometers-thick TaN seed layer yields largely the same performance. However, adding an additional, few-nanometers-thick Ta buffer layer between the Si substrate and this TaN seed layer enhances Qi significantly up to 5.9x10^5. Supporting transmission electron microscopy measurements reveal nitrogen accumulation and structural disorder at the TaN-Si interface, while this interfacial modification is suppressed when the Ta buffer layer is introduced. The observed improvement in resonator performance is consistent with a reduction of interface-related two-level system losses and strongly supports the hypothesis that controlling the substrate-metal interface is pivotal for the performance of superconducting qubit circuitry.

cond-mat.mtrl-sci↗

arXiv2026

Interfacial Strain and Structural Defects Govern the Performance of Tantalum Superconducting Waveguide Resonators

Tantalum (Ta) is a promising material for reaching long coherence times in superconducting qubits. A detailed understanding of the underlying structure-property relationship remains elusive though. In the present study, we sputter-deposited 200 nm thick Ta films on high-resistivity silicon (100) substrates at temperatures ranging from T = 20{\deg}C to 600{\deg}C, as well as on different seed layers (Nb, TiN and TaN). Alpha-Ta thin films were readily obtained at temperatures above 500{\deg}C and on all seed layers. The films were characterized in terms of surface morphology, residual-resistance ratio, crystal phase composition and superconducting transition temperature, as well as RF-performance using coplanar waveguide resonators. Internal quality factors of up to 1.5 million were measured at 100 mK in the single-photon regime. Despite similar bulk material properties, alpha-Ta films on different seed layers exhibit markedly different RF-performance, which we attribute to dissimilar strain and structural defects at the substrate-metal interfaces. Williamson-Hall analysis of XRD data reveals a clear correlation between decreasing microstrain and increasing quality factor. Cross-sectional HR-TEM further supports this interpretation by directly resolving interfacial disorder. Our results highlight the critical role of interface engineering in optimizing superconducting thin films for low-loss quantum computing circuitry.

cond-mat.mtrl-sci↗

arXiv2026

Enhanced Tantalum Superconducting Resonator Performance via All-Surface Organic Monolayer Passivation

Tantalum is a promising platform for superconducting quantum circuits, yet coherence times remain limited by dielectric losses from interfacial two-level systems (TLS), exacerbated by native oxide regrowth. Here, we implement molecular surface passivation using self-assembled organic monolayers on freshly etched tantalum and silicon in coplanar waveguide resonators. Surface characterization by contact angle, XPS, FTIR and TEM confirm the formation of ordered, nanometer-thick films that suppress oxide formation. Microwave measurements in the ~5-9 GHz range reveal internal quality factors up to 1.8x10^6 in the single-photon regime at 100 mK, representing a ~140% improvement over untreated devices with native oxide. Power and temperature dependent measurements attribute this enhancement to reduced TLS-induced losses. These results demonstrate that molecular passivation effectively engineers low-loss interfaces and provides a scalable route toward high-coherence superconducting quantum devices.

cond-mat.mtrl-sci↗

arXiv2026

Chiral-Induced Spin Selectivity Effect in a 1 nm Thin 1,1'-Binaphthyl-2,2'-diyl Hydrogenphosphate Self-Assembled Monolayer on Nickel Oxide

The chiral-induced spin selectivity (CISS) effect describes an observed correlation between the orientation of an electron spin transported or transferred through a molecule and that molecule's chirality. Suitable molecules are usually arranged as self-assembled monolayers (SAMs), and the primary CISS systems are based on multiple nanometer-long biomolecules exhibiting helical chirality. Aside from these typically thiolate-anchored molecules, phosphonic and phosphoric acid SAMs may well become significant for those CISS applications that require a more robust molecular coupling to metal oxide surfaces. In this work, we report on our studies, employing the aromatic, low-molecular-mass, axially chiral organophosphoric acid derivative 1,1'-binaphthyl-2,2'-diyl hydrogenphosphate (BNP). Grown as a roughly 1 nm thin SAM on top of a NiOx/Ni substrate, a strong circular dichroism signal indicates that the thin films preserved chirality. The CISS response exhibits a high magnetoresistance with a spin polarization of 50-80% when measured using magnetic-conductive atomic force microscopy. For biases above 0.5 V, the magnetoresistance curves could be well fitted to the Fowler-Nordheim (FN) tunneling model. Using a minimal FN model, we determined that, depending on the magnetization direction and the handedness of the molecules, electrons of a certain spin direction face an effective tunneling barrier at high bias, which is either 80 % higher or 40 % lower compared to the barrier for electrons of the opposite spin direction. Due to the small size of the molecules, their compatibility with oxide materials, and their commercial availability, they are excellent candidates for the realization of novel (nanoscale) organic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Optimizing CMOS-compatible, superconducting titanium nitride resonators: Deposition conditions and structuring processes

We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically investigate how deposition conditions, dry-etch power and in-situ resist strip temperature affect morphology, superconducting properties and dielectric losses. By tuning reactive sputtering conditions, three distinct preferred out-of-plane crystal orientations - (111), (200), and a mix of both are achieved. Our results demonstrate that all films exhibit similar minimal two-level system (TLS) losses, with TiN111 exhibiting the lowest median TLS losses $\tilde{\delta}_\mathrm{TLS}$, and greater robustness against reoxidation. The applied structuring process, in contrast, has a far greater influence on the TLS loss than the crystal orientation of the TiN film and, consequently, the intrinsic material properties of the superconducting layer. The lowest TLS losses for all TiN depositions were achieved with a low power etch and low temperature resist strip. An additional buffered oxide etch (BOE) treatment could remove high-loss interfacial oxides at the metal-air (MA) and substrate-air (SA) interface and recover the etch-induced TLS losses. Consequently, TiN resonators exhibiting $\tilde{\delta}_\mathrm{TLS}$ values as low as $9.67 \times 10^{-7}$ were realized. The corresponding median low-power loss, $\tilde{\delta}_\mathrm{LP}$, amounts to $11.04 \times 10^{-7}$, which translates to an internal quality factor approaching one million. These findings highlight the critical role of process induced oxide formation at the MA and SA interfaces in limiting the performance of TiN resonators and provide a scalable, low-loss process compatible with industry-grade 200\,mm CMOS qubit fabrication workflows.

quant-ph↗

arXiv2025

Stability studies on subtractively-fabricated CMOS-compatible superconducting transmon qubits

Developing fault-tolerant quantum processors with error correction demands large arrays of physical qubits whose key performance metrics (coherence times, control fidelities) must remain within specifications over both short and long timescales. Here we investigated the temporal stability of subtractively fabricated CMOS-compatible superconducting transmon qubits. During a single cooldown and over a period of 95 hours, we monitored several parameters for 8 qubits, including coherence times $T_1$ and $T_2^*$, which exhibit fluctuations originating primarily from the interaction between two-level system (TLS) defects and the host qubit. We also demonstrate that subtractively-fabricated superconducting quantum devices align with the theoretical predictions that higher mean lifetimes $T_1$ correspond to larger fluctuations. To assess long-term stability, we tracked two representative qubits over 10 cooldown cycles spanning more than one year. We observed an average total downward shift in both qubit transition frequencies of approximately 61 MHz within the thermal cycles considered. In contrast, readout resonator frequencies decreased only marginally. Meanwhile, $T_1$ exhibits fluctuations from cycle to cycle, but maintains a stable baseline value.

quant-ph↗

arXiv2025

High temporal stability of niobium superconducting resonators by surface passivation with organophosphonate self-assembled monolayers

One main limiting factor towards achieving high coherence times in superconducting circuits is two level system (TLS) losses. Mitigating such losses requires controlling the formation of native oxides at the metal-air interface. Here, we report the growth of alkyl-phosphonate self-assembled monolayers (SAMs) on Nb thin films following oxide removal. The impact of passivation was evaluated via the performance of coplanar waveguide resonators at 10mK, in terms of quality factor and resonant frequency, over six days of air exposure. Un-passivated resonators exhibited an ~80% increase in loss at single-photon power levels, whereas SAM-passivated resonators maintained excellent temporal stability, attributed to suppressed oxide regrowth. By employing a two-component TLS model, we discern distinct prominent loss channels for each resonator type and quantified the characteristic TLS loss of the SAMs to be ~5x10^-7. We anticipate our passivation methodology to offer a promising route toward industrial-scale qubit fabrication, particularly where long-term device stability is critical.

cond-mat.mtrl-sci↗

arXiv2024

Development of TiN/AlN-based superconducting qubit components

This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiN / AlN / TiN junctions yielded values ranging from 150 ${\mu}$A to 2 ${\mu}$A, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.

physics.app-ph↗

arXiv2024

Tantalum thin films sputtered on silicon and on different seed layers: material characterization and coplanar waveguide resonator performance

Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AlN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600{\deg}C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors $Q_i$ reaching 1 x $10^6$ in the single-photon regime, measured at $T=100 {\space \rm mK}$.

cond-mat.mtrl-sci↗

arXiv2024

Mono-exponential Current Attenuation with Distance across 16 nm Thick Bacteriorhodopsin Multilayers

The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length-attenuation, as in off-resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self-assembled multilayers of the protein bacteriorhodopsin (bR). About 7.5 nm to 15.5 nm thick bR layers were prepared on conductive titanium nitride (TiN) substrates using aminohexylphosphonic acid and poly-diallyl-dimethylammonium electrostatic linkers. Using conical EGaIn top contacts, an intriguing, mono-exponential conductance attenuation as a function of the bR layer thickness with a small attenuation coefficient $\beta \approx 0.8 \space {\rm nm}^{-1}$ is measured at zero bias. Variable-temperature measurements using evaporated Ti/Au top contacts yield effective energy barriers of about 100 meV from fitting the data to tunneling, hopping, and carrier cascade transport models. The observed temperature-dependence is assigned to the protein-electrode interfaces. The transport length and temperature dependence of the current densities are consistent with tunneling through the protein-protein and protein-electrode interfaces, respectively. Importantly, our results call for new theoretical approaches to find the microscopic mechanism behind the remarkably efficient, long-range electron transport within bR.

physics.bio-ph↗

arXiv2024

Current rectification via Photosystem I monolayers induced by their orientation on hydrophilic self-assembled monolayers on titanium nitride

Photosystem I (PSI) is a photosynthetic protein which evolved to efficiently transfer electrons through the thylakoid membrane. This remarkable process attracted the attention of the biomolecular electronics community, which aims to study and understand the underlying electronic transport through these proteins by contacting ensembles of PSI with solid-state metallic contacts. This paper extends published work of immobilizing monolayers of PSI with a specific orientation, by using organophosphonate self-assembled molecules with hydrophilic heads on ultra-flat titanium nitride. Electrical measurements carried out with eutectic GaIn top contacts showed current rectification ratios of up to ~200. The previously proposed rectification mechanism, relying on the protein's internal electric dipole, was inquired by measuring shifts in the work function. Our straightforward bottom-up fabrication method may allow for further experimental studies on PSI molecules, such as embedding them in solid-state, transparent top contact schemes for optoelectronic measurements.

physics.bio-ph↗