arXiv subjects

Marc Vila

Publications and source records attributed to Marc Vila.

At least 19 recordsLinked to original sources

arXiv2026

Relativistic and nonrelativistic spin splitting above and below the Fermi level in a $g$-wave altermagnet

Nonrelativistic spin splitting (NRSS) challenges conventional wisdom about antiferromagnets by allowing spin-split electronic bands even in collinear orders with zero net magnetization. This sub-class of antiferromagnets, recently dubbed "altermagnets," enforces distinctive spin textures via spin-group symmetries in the crystal. However, direct experimental evidence for such symmetry-driven magnetism remains scarce, and distinguishing it from relativistic spin splitting presents additional challenges. Here, we combine first-principles calculations, symmetry analysis, and two spin-resolved spectroscopies--angle-resolved photoemission (spin-ARPES) and our newly developed spin- and angle-resolved electron reflection spectroscopy (spin-ARRES)--to achieve the first complete momentum-resolved mapping of relativistic (RSS) and nonrelastivistic (NRSS) spin splitting in CoNb$_4$Se$_8$. By probing both the occupied (spin-ARPES) and unoccupied (spin-ARRES) electronic states in a single experiment, we uncover a series of momentum-dependent spin splitting phenomena each of which switch sign under sixfold rotations and persists far above and below the Fermi level. Crucially, distinct nodal planes in momentum space distinguish NRSS from RSS features. Additionally, the observed collapse of NRSS and the persistence of RSS above the Néel temperature, distinguishes a genuine magnetic phase transition from inversion symmetry breaking. Our work demonstrates, for the first time, the combined power of spin-ARPES and spin-ARRES in capturing the full spin texture across an extended energy range, positioning CoNb$_4$Se$_8$ as a prototype for exploring spin-group-based phenomena. These findings open new routes for engineering spin-based functionalities ranging from neuromorphic computing to unconventional superconductivity in layered antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Twin-boundary-induced nonrelativistic spin splitting

Nonrelativistic spin splitting (NRSS) in compensated magnetic materials is drawing considerable attention due to its potential impact in next-generation spintronic devices. While NRSS is typically restricted to materials with particular symmetry constraints, here we demonstrate, using density functional theory (DFT) and tight-binding transport calculations, that twin boundaries can induce NRSS in magnetic systems where it is otherwise forbidden. We focus on two representative material systems: the tetragonal perovskite oxide BiCoO$_3$ with $90^{\circ}$ ferroelastic domain walls, and the rhombohedral layered delafossite-type oxide CoO$_2$, supporting $71^{\circ}$, $109^{\circ}$, and $135^{\circ}$ twin boundaries. Our results reveal that, if these boundaries coexist with ferromagnetic domain walls, they consistently produce NRSS similar to that of d-wave altermagnets, with nodal surfaces dictated by the underlying symmetry of the supercell containing the twin boundary. Tight-binding models further elucidate how the NRSS and derived transport properties scale with domain size and density. Our results put forward twin boundary engineering as a versatile route to realize and control spin splitting in a broader class of materials.

cond-mat.mtrl-sci↗

arXiv2025

Odd-parity altermagnetism through sublattice currents: From Haldane-Hubbard model to general bipartite lattices

We propose the sublattice currents in a compensated collinear magnetic system as a feasible route to odd-parity altermagnetism (ALM), where nonrelativistic collinear spin splitting occurs in the bands as an odd function of momentum. In contrast to previously classified ALMs, the sublattice currents break the time-reversal symmetry in the nonmagnetic crystal structure and allow for such odd-parity spin splitting. A representative example is the Haldane-Hubbard model at half filling. Although the compensated collinear magnetic ground state was previously recognized as antiferromagnetism, we show that it is actually an odd-parity ALM. Interestingly, its topological version serves as an example of an ALM Chern insulator. We further generalize the Haldane-Hubbard model to common two- and three-dimensional bipartite lattices. With spin splitting allowed by sublattice currents, the compensated collinear magnetic ground states at half filling are generally odd-parity ALM.

cond-mat.str-el↗

arXiv2024

Controlling topology through targeted composite symmetry manipulation in magnetic systems

The possibility of selecting magnetic space groups by orienting the magnetization direction or tuning magnetic orders offers a vast playground for engineering symmetry protected topological phases in magnetic materials. In this work, we study how selective tuning of symmetry and magnetism can influence and control the resulting topology in a 2D magnetic system, and illustrate such procedure in the ferromagnetic monolayer MnPSe$_3$. Density functional theory calculations reveals a symmetry-protected accidental semimetalic (SM) phase for out-of-plane magnetization which becomes an insulator when the magnetization is tilted in-plane, reaching band gap values close to $100$ meV. We identify an order-two composite antiunitary symmetry and threefold rotational symmetry that induce the band crossing and classify the possible topological phases using symmetry analysis, which we support with tight-binding and $\mathbf{k}\cdot\mathbf{p}$ models. Breaking of inversion symmetry opens a gap in the SM phase, giving rise to a Chern insulator. We demonstrate this explicitly in the isostructural Janus compound Mn$_2$P$_2$S$_3$Se$_3$, which naturally exhibits Rashba spin-orbit coupling that breaks inversion symmetry. Our results map out the phase space of topological properties of ferromagnetic transition metal phosphorus trichalcogenides and demonstrate the potential of the magnetization-dependent metal-to-insulator transition as a spin switch in integrated two-dimensional electronics.

cond-mat.mes-hall↗

arXiv2024

Orbital-spin Locking and its Optical Signatures in Altermagnets

Altermagnets, magnetic materials with zero magnetization and spin-split band structure, have gained tremendous attention recently for their rich physics and potential applications. Here, we report on a microscopic tight-binding model that unveils a unique coupling between orbitals and spins in $d$-wave altermagnets which gives rise to momentum-dependent and spin-selective optical absorption. This coupling promotes the controlled optical excitation of up or down spins depending on the polarization direction of linearly polarized light. Such an effect originates from the coupling of orbitals to the sublattice degree of freedom through the crystal field, which is then coupled to spins through the antiferromagnetic interaction. Our crystal field analysis, which is general to any type of altermagnet, helps understand the onset of altermagnetism from a microscopic point of view, and we use our results to propose clear magneto-optical signatures of our predictions. Our findings shine light on the interplay between orbitals and spins in altermagnets, thus paving the way towards novel orbitronic and opto-spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Electrical control of spin and valley in spin-orbit coupled graphene multilayers

Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated van der Waals heterostructures as a promising platform for spintronics and valleytronics.

cond-mat.str-el↗

arXiv2023

Converting Non-Equilibrium Charge Density into Spin Current

The interconversion between charge and spin degrees of freedom is of both fundamental and technological relevance in spintronics. While a non-equilibrium spin density and a charge current are related by the well known Rashba-Edelstein effect, here we theoretically model the generation of a time-dependent spin current due to a periodic modulation of the charge density, for example by a gate. By using the Boltzmann transport equation, we show that when the chemical potential is varied, a spin current is generated in the time scale it takes for the system to re-equilibrate in the new chemical potential. The effect is ubiquitous in many systems with spin-momentum locking; we compute the strength of the effect in four examples and propose a simple device scheme to measure the spin accumulation resulting from such time-dependent spin currents. Our findings test fundamental theoretical questions about charge-to-spin conversion mechanisms and provide an all-electrical way to generate spin currents without the need for charge currents, magnetic materials or optical methods.

cond-mat.mes-hall↗

arXiv2023

Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here we predict an extremely large resistance switching based on the relative spin-orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance of up to $10^6 \%$ when the relative alignment of TMDs goes from $0^{\circ}$ to $60^{\circ}$ and when the angle is kept fixed at $60^{\circ}$ and the Fermi level is varied. By creating vacancies, we evaluate how inter-valley scattering affects the efficiency and find that the resistance switching remains large ($10^4 \%$) for typical values of vacancy concentration. Not only this resistance switching should be observed at room temperature due to the large spin splitting, but our results show how twist angle engineering and control of van der Waals heterostructures could be used for next-generation memory and electronic applications.

cond-mat.mes-hall↗

arXiv2023

Linear magneto-conductivity as a DC probe of time-reversal symmetry breaking

Several optical experiments have shown that in magnetic materials the principal axes of response tensors can rotate in a magnetic field. Here we offer a microscopic explanation of this effect, and propose a closely related DC transport phenomenon -- an off-diagonal \emph{symmetric} conductivity linear in a magnetic field, which we refer to as linear magneto-conductivity (LMC). Although LMC has the same functional dependence on magnetic field as the Hall effect, its origin is fundamentally different: LMC requires time-reversal symmetry to be broken even before a magnetic field is applied, and is therefore a sensitive probe of magnetism. We demonstrate LMC in three different ways: via a tight-binding toy model, density functional theory calculations on MnPSe$_3$, and a semiclassical calculation. The third approach additionally identifies two distinct mechanisms yielding LMC: momentum-dependent band magnetization and Berry curvature. Finally, we propose an experimental geometry suitable for detecting LMC, and demonstrate its applicability using Landauer-Büttiker simulations. Our results emphasize the importance of measuring the full conductivity tensor in magnetic materials, and introduce LMC as a new transport probe of symmetry.

cond-mat.mes-hall↗

arXiv2023

Giant Spin Transport Anisotropy in Magnetic Topological Insulators

We report on exceptionally long spin transport and giant spin lifetime anisotropy in the gapped surface states of three-dimensional (3D) magnetic topological insulators (MTIs). We examine the properties of these states using the Fu-Kane-Mele Hamiltonian in presence of a magnetic exchange field. The corresponding spin textures of surface states, which are well reproduced by an effective two-band model, hint at a considerable enhancement of the lifetime of out-of-plane spins compared to in-plane spins. This is confirmed by large-scale spin transport simulations for 3D MTIs with disorder. The energy dependence of the spin lifetime anisotropy arises directly from the nontrivial spin texture of the surface states, and is correlated with the onset of the quantum anomalous Hall phase. Our findings suggest novel spin filtering capabilities of the gapped surface MTI states, which could be explored by Hanle spin precession measurements.

cond-mat.mes-hall↗

arXiv2022

Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect

Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices.

cond-mat.mes-hall↗

arXiv2022

Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers

The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted} spin Hall effect, characterized by concurrent in-plane and out-of-plane spin polarizations. Here, through quantum transport calculations on realistic device geometries, including disorder, we predict a very large gate-tunable SHE figure of merit $λ_sθ_{xy}\sim 1\text{--}50$ nm in ${\rm MoTe}_2$ and ${\rm WTe}_2$ monolayers that significantly exceeds values of conventional SHE materials. This stems from a concurrent long spin diffusion length ($λ_s$) and charge-to-spin interconversion efficiency as large as $θ_{xy} \approx 80$\%, originating from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour, respectively. Generalization to other materials and specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and electronic topology can govern the intrinsic SHE and spin relaxation, and how they may be exploited to broaden the range and efficiency of spintronic materials and functionalities.

cond-mat.mes-hall↗

arXiv2021

Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects

Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by reversing the sign of the exchange interaction. By performing quantum transport calculations in disordered systems, the chirality and resilience of the valley-polarized edge state are demonstrated. Our findings provide a promising route to engineer a topological phase that could enable low-power electronic devices and valleytronic applications.

cond-mat.mes-hall↗

arXiv2020

Canted Spin Texture and Quantum Spin Hall Effect in WTe2

We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multi-probe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials.

cond-mat.mes-hall↗

arXiv2020

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices.

cond-mat.mes-hall↗

arXiv2019

Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene

Engineering two-dimensional material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The perpendicular magnetic anisotropy of Cr2Ge2Te6 results in significant modification of the spin transport and precession in graphene, which is ascribed to the proximity-induced exchange interaction. Furthermore, the observation of a larger lifetime for perpendicular spins in comparison to the in-plane counterpart suggests the creation of a proximity-induced anisotropic spin texture in graphene. Our experimental results and density functional theory calculations open up opportunities for the realization of proximity-induced magnetic interactions and spin filters in 2D material heterostructures and can form the basic building blocks for future spintronic and topological quantum devices.

cond-mat.mes-hall↗

arXiv2019

Tunable Circular Dichroism and Valley Polarization in the Modified Haldane Model

We study the polarization dependence of optical absorption for the modified Haldane model, which exhibits antichiral edge modes in presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or Weyl semimetals. A rich optical phase diagram is unveiled, in which the correlations between perfect circular dichroism, pseudospin and valley polarization can be tuned independently upon varying the Fermi energy. Importantly, perfect circular dichroism and valley polarization are achieved simultaneously. This unprecedented combination of optical properties suggests some interesting novel photonic device functionality (e.g. light polarizer) which could be combined with valleytronics applications (e.g. generation of valley currents).

cond-mat.mes-hall↗

arXiv2018

Room temperature spin Hall effect in graphene/MoS$_2$ van der Waals heterostructures

Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS$_2$ proximity and for varying temperature up to room temperature. The fact that spin transport and spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Remarkably for a single graphene/MoS$_2$ heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS$_2$. By comparing our results to theoretical calculations, the latter scenario is found the most plausible one. Our findings pave the way towards the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.

cond-mat.mes-hall↗