arXiv subjects

Marc-André Dupertuis

Publications and source records attributed to Marc-André Dupertuis.

7 recordsLinked to original sources

arXiv2021

Bell Diagonal and Werner state generation: entanglement, non-locality, steering and discord on the IBM quantum computer

We propose the first correct special-purpose quantum circuits for preparation of Bell-diagonal states (BDS), and implement them on the IBM Quantum computer, characterizing and testing complex aspects of their quantum correlations in the full parameter space. Among the circuits proposed, one involves only two quantum bits but requires adapted quantum tomography routines handling classical bits in parallel. The entire class of Bell-diagonal states is generated, and a number of characteristic indicators, namely entanglement of formation, CHSH non-locality, steering and discord, are experimentally evaluated over the full parameter space and compared with theory. As a by-product of this work we also find a remarkable general inequality between "quantum discord" and "asymmetric relative entropy of discord": the former never exceeds the latter. We also prove that for all BDS the two coincide.

quant-ph↗

arXiv2020

Evidence of the entanglement constraint on wave-particle duality using the IBM Q quantum computer

We experimentally verify the link existing between entanglement and the amount of wave-particle duality in a bipartite quantum system, with superconducting qubits in the IBM Q quantum computer. We consider both pure and mixed states, and study the influence of state purity on the observation of the complementarity "triality" relation of Jakob and Bergou. This work confirms the quantitative completion of local Bohr's complementarity principle by the nonlocal quantum entanglement typical of a truly bipartite quantum system.

quant-ph↗

arXiv2018

Efficient quantum algorithms for $GHZ$ and $W$ states, and implementation on the IBM quantum computer

We propose efficient algorithms with logarithmic step complexities for the generation of entangled $GHZ_N$ and $W_N$ states useful for quantum networks, and we demonstrate an implementation on the IBM quantum computer up to $N=16$. Improved quality is then investigated using full quantum tomography for low-$N$ GHZ and W states. This is completed by parity oscillations and histogram distance for large $N$ GHZ and W states respectively. We are capable to robustly build states with about twice the number of quantum bits which were previously achieved. Finally we attempt quantum error correction on GHZ using recent schemes proposed in the literature, but with the present amount of decoherence they prove detrimental.

quant-ph↗

arXiv2014

Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking

A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in inverted tetrahedral pyramids. The studied QDs reveal signatures of one confined electron level, one heavy-hole-like level and one light-hole-like level. The various heavy-light-hole hybrid exciton complexes formed in these QDs are studied by polarization resolved spectroscopy, excitation power dependence, crystal temperature dependence and temporal single photon correlation measurements. The presented approach, which only requires a minimal theoretical input, enables strict spectral identification of the fine structure patterns including weak and spectrally overlapping emission lines. Furthermore, it allows the involved electron-hole and hole-hole exchange interaction energies to be deduced from measurements. Intricate fine structure patterns are qualitatively understood by group theory and shown to be very sensitive to the exact symmetry of the QD. Emission patterns influenced by hole-hole exchange interactions are found to be particularly useful for identifying QDs with high $C_{3v}$ symmetry and for probing symmetry breaking.

cond-mat.mes-hall↗

arXiv2013

Symmetries and optical transitions of hexagonal quantum dots in GaAs/AlGaAs nanowires

We investigate the properties of electronic states and optical transitions in hexagonal GaAs quantum dots within AlGaAs nanowires. Such dots are particularly interesting due to their high degree of symmetry. A streamlined postsymmetrization technique based on class operators (PTCO) is developed which enables one to benefit in one run from the insight brought by the Maximal symmetrization and reduction of fields (MSRF) approach reported by Dalessi et al. [Phys. Rev. B 81, 125106 (2010)], after having solved the Schrödinger equation. Definite advantages of the PTCO are that it does not require having to modify any existing code for the calculation of the electronic structure, and that it allows to numerically test for elevated symmetries. We show in the frame of a 4-band k.p model that despite the fact that the D6h symmetry of the nanostructure is broken at the microscopic level by the underlying Zinc Blende crystal structure, the effect is quite small. Most of the particularities of the electronic states and their optical emission can be understood by symmetry elevation to D6h and the presence of approximate azimuthal and radial quantum numbers.

cond-mat.mes-hall↗

arXiv2007

Semi-classical Expansion of the Smooth Part of the Density of States, with Application to the Hydrogen Atom in Uniform Magnetic Field

We give a method to compute the smooth part of the density of states in a semi-classical expansion, when the Hamiltonian contains a Coulomb potential and non-cartesian coordinates are appropriate. We apply this method to the case of the hydrogen atom in a magnetic field with fixed $z$-component of the angular momentum. This is then compared with numerical results obtained by a high precision finite element approach. The agreement is excellent especially in the \emph{chaotic} region of the spectrum. The need to go beyond the Thomas-Fermi model is clearly established.

nlin.CD↗

arXiv2006

The carrier ''antibinding'' in quantum dots: a charge separation effect

We show that the carrier ''antibinding'' observed recently in semiconductor quantum dots, i.e., the fact that the ground state energy of two electron-hole pairs goes above twice the ground-state energy of one pair, can entirely be assigned to a charge separation effect, whatever its origin. In the absence of external electric field, this charge separation comes from different ''spreading-out'' of the electron and hole wavefunctions linked to the finite height of the barriers. When the dot size shrinks, the two-pair energy always stays below when the barriers are infinite. On the opposite, because barriers are less efficient for small dots, the energy of two-pairs in a dot with finite barriers, ends by behaving like the one in bulk, i.e., by going above twice the one-pair energy when the pairs get too close. For a full understanding of this ''antibinding'' effect, we have also reconsidered the case of one pair plus one carrier. We find that, while the carriers just have to spread out of the dot differently for the ''antibinding'' of two-pairs to appear, this ''antibinding'' for one pair plus one carrier only appears if this carrier is the one which spreads out the less. In addition a remarkable sum rule exists between the "binding energies" of two pairs and of one pair plus one carrier.

cond-mat.mes-hall↗