arXiv subjects

Marcelo J. Rozenberg

Publications and source records attributed to Marcelo J. Rozenberg.

At least 19 recordsLinked to original sources

arXiv2026

Magnetoresistivity in the Antiferromagnetic Hubbard Model

We investigate the magnetotransport properties of the half-filled antiferromagnetic (AF) one-band Hubbard model under an external magnetic field using the single-site dynamical mean-field approximation (DMFT). Particular attention is paid to the mechanisms driving the magnetoresistivity behavior. We analyze the dependence of magnetoresistivity on temperature and the strength of the applied magnetic field, providing insights into the interplay between magnetic fluctuations and transport properties in AF systems.

cond-mat.str-el↗

arXiv2025

Enhanced stochasticity in irradiated vanadium oxide oscillators

Insulator-to-metal transition materials are highly sensitive to even minute deviations of stoichiometry, lattice defects, and disorder, which provides opportunities to engineer their electrical switching characteristics. Using V2O3 as a prototypical metal-insulator transition resistive switching material, we demonstrate that localized focused ion beam irradiation can induce stochastic oscillatory dynamics in simple two-terminal switching devices. After irradiating the material, we observed an unusual dynamic regime where the voltage induced metallic state momentarily collapses into an insulating state, which results in a rapid current flickering that is qualitatively different from the conventional current spiking in a Pearson-Anson type oscillatory circuit implemented using the pristine material. Furthermore, the current flickering timing in the irradiated devices becomes progressively more random and more sparse with increasing input voltage, resulting in nonlinear and nondeterministic oscillatory behavior. The irradiation also leads to a dramatic reduction in switching power required to induce the current oscillations. These results are elucidated through random resistor network simulations which indicate that a small number of local sites can control the electrical metal-insulator transition switching properties in large devices with high defect concentration. Our results show that selective focused ion beam irradiation provides exciting prospects for engineering and tuning novel stochastic behaviors in emergent technologies that rely on the intrinsic randomness of physical processes.

cond-mat.dis-nn↗

arXiv2025

A dynamical memory with only one spiking neuron

Common wisdom indicates that to implement a Dynamical Memory with spiking neurons two ingredients are necessary: recurrence and a neuron population. Here we shall show that the second requirement is not needed. We shall demonstrate that under very general assumptions a single recursive spiking neuron can realize a robust model of a dynamical memory. We demonstrate the implementation of a dynamical memory in both, software and hardware. In the former case, we introduce trivial extensions of the popular aQIF and AdEx models. In the latter, we show traces obtained in a circuit model with a recently proposed memristive spiking neuron. We show that the bistability of the theoretical models can be understood in terms of a self-consistent problem that can be represented geometrically. Our minimal dynamical memory model provides a simplest implementation of an important neuro-computational primitive, which can be useful in navigation system models based on purely spiking dynamics. A one neuron dynamical memory may also provides a natural explanation to the surprising recent observation that the excitation bump in Drosophila's ellipsoidal body is made by just a handful of neurons.

q-bio.NC↗

arXiv2024

Charge gain via solid-state gating of an oxide Mott system

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal to insulator transition (MIT) offers prospects of substantial modulation of the free carriers and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials towards novel Mott transistors requires the realization of their charge gain prospects in a solid-state device. In this study, we present gate-control of electron correlation using a solid-state device utilizing the oxide Mott system $La_{1-x}Sr_xVO_3$ as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework, suggesting at least $\times100$ charge gain originating from the correlated behavior. These preliminary results pave the way towards the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

cond-mat.str-el↗

arXiv2023

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. Here, we present control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. We illustrate how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated $SrVO_3$ model system. We show how tensile and compressive biaxial strain oppositely affect the $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. We derive and explain the spectral weight redistribution under strain and illustrate how high tensile strain drives the system towards a Mott insulating state. Implementation of such concepts will drive correlated electron phenomena closer towards new solid state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer towards practical realization.

cond-mat.str-el↗

arXiv2023

Solid State Neuroscience: Spiking Neural Networks as Time Matter

We aim at building a bridge between to {\it a priori} disconnected fields: Neuroscience and Material Science. We construct an analogy based on identifying spikes events in time with the positions of particles of matter. We show that one may think of the dynamical states of spiking neurons and spiking neural networks as {\it time-matter}. Namely, a structure of spike-events in time having analogue properties to that of ordinary matter. We can define for neural systems notions equivalent to the equations of state, phase diagrams and their phase transitions. For instance, the familiar Ideal Gas Law relation (P$v$ = constant) emerges as analogue of the Ideal Integrate and Fire neuron model relation ($I_{in}$ISI = constant). We define the neural analogue of the spatial structure correlation function, that can characterize spiking states with temporal long-range order, such as regular tonic spiking. We also define the ``neuro-compressibility'' response function in analogy to the lattice compressibility. We show that similarly to the case of ordinary matter, the anomalous behavior of the neuro-compressibility is a precursor effect that signals the onset of changes in spiking states. We propose that the notion of neuro-compressibility may open the way to develop novel medical tools for the early diagnose of diseases. It may allow to predict impending anomalous neural states, such as Parkinson's tremors, epileptic seizures, electric cardiopathies, and perhaps may even serve as a predictor of the likelihood of regaining consciousness.

q-bio.NC↗

arXiv2023

Characteristic lengthscales of the electrically-induced insulator-to-metal transition

Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its characteristic lengths: what sets the size of these filaments, and how does this impact resistive switching properties. Here we use a combination of wide-field and scattering-type scanning near-field optical microscopies to characterize filament formation in NdNiO3 and SmNiO3 thin films. We find a clear trend: smaller filaments increase the current density, yielding sharper switching and a larger resistive drop. With the aid of numerical simulations, we discuss the parameters controlling the filament width and, hence, the switching properties.

cond-mat.mtrl-sci↗

arXiv2022

Phenomenological classification of metals based on resistivity

Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering rates, can be used to provide a phenomenological description of the electrical resistivity in all metals, where these two contributions are shown to correspond to the two first terms of a Taylor expansion of the resistivity, detached of their physics origin, and thus, valid for any metal. Here we show that the different metallic classes are then determined by the relative magnitude of these two components and the magnitude of the extrapolated residual resistivity. These two parameters allow to categorize a few systems that are notoriously hard to ascribe to one of the currently accepted metallic classes. This approach also reveals that the T-linear term has a common origin in all cases, strengthening the arguments that propose the universal character of the Planckian dissipation bound.

cond-mat.str-el↗

arXiv2022

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

cond-mat.str-el↗

arXiv2020

Odd-frequency superconductivity in dilute magnetic superconductors

We show that dilute magnetic impurities in a conventional superconductor give origin to an odd-frequency component of superconductivity, manifesting itself in Yu-Shiba-Rusinov bands forming within the bulk superconducting gap. Our results are obtained in a general model solved within the dynamical mean field theory. By exploiting a disorder analysis and the limit to a single impurity, we are able to provide general expressions that can be used to extract explicitly the odd-frequency superconducting function from scanning tunneling measurements.

cond-mat.supr-con↗

arXiv2020

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Persistent Gap Across the Disorder-localized-to-Mott-localized Transition

We show that Nanoparticle (NP) solids are an exciting platform to seek new insights into the disordered Mott-Hubbard physics. We developed a "Hierarchical Nanoparticle Transport Simulator" (HINTS), which builds from localized states to describe the Disorder-localized and Mott-localized phases, and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multi-orbital Hubbard model at and away from integer filling by Dynamical Mean Field Theory. This approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios and phase diagrams produced by the two methods are strikingly similar, and account for the mobilities measured in NP solids.

cond-mat.mes-hall↗

arXiv2018

Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing

This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. We discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain.

physics.app-ph↗

arXiv2017

Resolving the VO$_2$ controversy: Mott mechanism dominates the insulator-to-metal transition

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO$_2$ is compatible with a Mott electronic mechanism, providing fresh insight to a long standing "chicken-and-egg" debate and calling for further research of "Mottronics" applications of this system.

cond-mat.str-el↗

arXiv2016

Magnetism, spin texture and in-gap states: Atomic specialization at the surface of oxygen-deficient SrTiO$_3$

Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements performed on the two-dimensional electronic states confined near the (001) surface of SrTiO$_3$ in the presence of oxygen vacancies, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is in- cluded, bands become spin-split with an energy difference ~100 meV at the $Γ$ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t$_{2g}$ itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface.

cond-mat.str-el↗

arXiv2013

Enhanced and continuous electrostatic carrier doping on the SrTiO$_{3}$ surface

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.

cond-mat.mtrl-sci↗

arXiv2007

Impurity scattering in strongly correlated metals close to the Mott transition

This work explores a simple approximation to describe isolated impurity scattering in a strongly correlated metal. The approximation combines conventional one electron scattering theory and the Dynamic Mean Field Theory to describe strong correlations in the host. It becomes exact in several limits, including those of very weak and very strong impurity potentials. Original electronic structure appears at the impurity site when the impurity potential strength is moderate and the host is close to the Mott transition. Our results may provide useful guidance for interpretation of scanning tunneling microscopy experiments in strongly correlated systems.

cond-mat.str-el↗

arXiv2005

Quantum Monte Carlo method for models of molecular nanodevices

We introduce a quantum Monte Carlo technique to calculate exactly at finite temperatures the Green function of a fermionic quantum impurity coupled to a bosonic field. While the algorithm is general, we focus on the single impurity Anderson model coupled to a Holstein phonon as a schematic model for a molecular transistor. We compute the density of states at the impurity in a large range of parameters, to demonstrate the accuracy and efficiency of the method. We also obtain the conductance of the impurity model and analyze different regimes. The results show that even in the case when the effective attractive phonon interaction is larger than the Coulomb repulsion, a Kondo-like conductance behavior might be observed.

cond-mat.mes-hall↗

arXiv2004

Quantum Magnets with Anisotropic Infinite Range Random Interactions

Using exact diagonalization techniques we study the dynamical response of the anisotropic disordered Heisenberg model for systems of S=1/2 spins with infinite range random exchange interactions at temperature T=0. The model can be considered as a generalization, to the quantum case, of the well known Sherrington-Kirkpatrick classical spin-glass model. We also compute and study the behavior of the Edwards Anderson order parameter and energy per spin as the anisotropy evolves from the Ising to the Heisenberg limits.

cond-mat.dis-nn↗