arXiv subjects

Marco Bianchi

Publications and source records attributed to Marco Bianchi.

At least 19 recordsLinked to original sources

arXiv2026

Interfacial Oxidation Enables Charge-Transfer Contacts and Degenerate n-Doping in Monolayer MoS$_2$

High contact resistance remains a central obstacle to the integration of two-dimensional (2D) semiconductors in electronic devices. Recent advances have demonstrated that contact performance can be dramatically improved through interface engineering, including the use of group-V semimetals and charge-transfer contacts based on strong interfacial doping. Here, we show that controlled interfacial oxidation provides an effective route to convert a semimetal contact into a charge-transfer contact that degenerately $n$-dopes single layer MoS$_2$. Using a combination of angle-resolved photoemission spectroscopy, X-ray photoelectron diffraction, low-energy electron diffraction and scanning tunnelling spectroscopy, we demonstrate that putting single layer MoS$_2$ in contact with a pristine Bi layer merely results in weak doping, whereas oxidation of the Bi layer leads to a pronounced occupation of the MoS$_2$ conduction band with an electron density on the order of $10^{13}$~cm$^{-2}$. The cause of this strong electron doping is the fact that an ultrathin $\beta$-Bi$_2$O$_3$ layer forms below the MoS$_2$ and that this has a particularly low work function, thereby acting as an efficient electron donor to MoS$_2$. Interfacial oxidation thus emerges as a powerful design knob for engineering charge-transfer contacts to 2D semiconductors.

cond-mat.mtrl-sci↗

arXiv2026

The rise and fall of an oxide: growth and evolution of Bismuth Oxide on Au(111)

We report a comprehensive, multi-technique study of bismuth oxide growth on Au(111) under different conditions such as temperature and exposure to molecular oxygen. By combining synchrotron-based X-ray photoelectron spectroscopy and diffraction with low-energy electron diffraction and scanning tunneling microscopy, we elucidate the structural evolution of the system during controlled oxidation and subsequent annealing. We find that Bi deposition induces well-defined surface reconstructions, whereas oxidation triggers the formation of a complex sequence of bismuth oxide domains. High-resolution spectroscopic and diffraction data enable us to pinpoint the structure of the oxide consistent with the $(201)$ surface of $\beta$-Bi$_2$O$_3$. In addition, angle resolved photoemission experiments and work function measurements reveal substantial electronic modifications triggered by a complex interplay of segregation of Bi and Au. Notably, a work function of 3.4 eV is achieved for oxidation at 423 K. These results provide benchmark structural and electronic insights into the Bi oxide/Au(111) system and establish a framework for integrating Bi$_2$O$_3$ as a contact material in devices using two-dimensional semiconductors, where it can enable low contact resistance.

cond-mat.mtrl-sci↗

arXiv2025

From strong to weak correlations in breathing-mode kagome van der Waals materials: Nb$_3$(F,Cl,Br,I)$_8$ as a robust and versatile platform for many-body engineering

By combining ab initio downfolding with cluster dynamical mean-field theory, we study the degree of correlations in monolayer, bilayer and bulk breathing-mode kagome van der Waals materials Nb$_3$(F,Cl,Br,I)$_8$. Our new material-specific many-body model library shows that in low-temperature bulk structures the Coulomb correlation strength steadily increases from I to F, allowing us to identify Nb$_3$I$_8$ as a weakly correlated insulator, Nb$_3$Br$_8$ and Nb$_3$Cl$_8$ as strongly correlated insulators, and Nb$_3$F$_8$ as a prototypical bulk Mott-insulator. Angle-resolved photoemission spectroscopy measurements comparing Nb$_3$Br$_8$ and Nb$_3$I$_8$ allow us to experimentally confirm these findings by revealing spectroscopic footprints of the degree of correlation. Our calculations uncover how the thickness and the stacking affect the degree of correlations and predict that the entire material family can be tuned into correlated charge-transfer or Mott-insulating phases upon doping. Our magnetic property analysis based on our model parameter library additionally confirms that inter-layer magnetic interactions drive the lattice phase transition to the low-temperature structures. The accompanying bilayer hybridization through inter-layer dimerization yields magnetic singlet-like ground states in the Cl, Br, and I compounds. We further prove that all low-temperature compounds are dynamically stable and that electron-phonon coupling to the low-energy subspace is suppressed. Our findings establish Nb$_3$X$_8$ as a robust, versatile, and tunable class for van der Waals-based Coulomb and Mott engineering with a rich phase diagram and allow us to speculate on the symmetry-breaking effects necessary for the recently observed Josephson diode effect in NbSe$_2$/Nb$_3$Br$_8$/NbSe$_2$ heterostructures.

cond-mat.str-el↗

arXiv2024

Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

cond-mat.mtrl-sci↗

arXiv2024

Mixed-valence state in the dilute-impurity regime of La-substituted SmB$_6$

Homogeneous mixed-valence (MV) behaviour is one of the most intriguing phenomena of $f$-electron systems. Despite extensive efforts, a fundamental aspect which remains unsettled is the determination of the limiting cases for which MV emerges. Here we address this question for SmB$_6$, a prototypical MV system characterized by two nearly-degenerate Sm$^{2+}$ and Sm$^{3+}$ configurations. By combining angle resolved photoemission spectroscopy (ARPES) and x-ray absorption spectroscopy (XAS), we track the evolution of the mean Sm valence, $v_{Sm}$, in the Sm$_x$La$_{1-x}$B$_6$ series. Upon substitution of Sm ions with trivalent La, we observe a linear decrease of valence fluctuations to an almost complete suppression at $x$$\,$=$\,$0.2, with $v_{Sm}$$\,$$\sim$$\,$2; surprisingly, by further reducing $x$, a re-entrant increase of $v_{Sm}$ develops, approaching the value of $v_{imp}$$\,$$\sim$$\,$2.35 in the dilute-impurity limit. Such observation departs from a monotonic evolution of $v_{Sm}$ across the whole series, as well as from the expectation of its convergence to an integer value for $x$$\,$$\rightarrow$$\,$0. Our ARPES and XAS results, complemented by a phenomenological model, demonstrate an unconventional evolution of the MV character in the Sm$_x$La$_{1-x}$B$_6$ series, paving the way to further theoretical and experimental considerations on the concept of MV itself, and its influence on the macroscopic properties of rare-earth compounds in the dilute-to-intermediate impurity regime.

cond-mat.str-el↗

arXiv2024

A Metastable Pentagonal 2D Material Synthesized by Symmetry-Driven Epitaxy

Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe2, are lower in energy in pentagonal phases and exhibit pentagons as building blocks. While theory has predicted a large number of pentagonal 2D materials, many of them are metastable and their experimental realization is difficult. Here we report the successful synthesis of a metastable pentagonal 2D material, the monolayer pentagonal PdTe2, by symmetry-driven epitaxy. Scanning tunneling microscopy and complementary spectroscopy measurements are used to characterize the monolayer pentagonal PdTe2, which demonstrates well-ordered low-symmetry atomic arrangements and is stabilized by lattice matching with the underlying Pd(100) substrate. Theoretical calculations, along with angle-resolved photoemission spectroscopy, reveal monolayer pentagonal PdTe2 is a semiconductor with an indirect bandgap of 1.05 eV. Our work opens an avenue for the synthesis of pentagon-based 2D materials and gives opportunities to explore their applications such as multifunctional nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2024

An autoencoder for compressing angle-resolved photoemission spectroscopy data

Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique to determine the electronic structure of solids. Advances in light sources for ARPES experiments are currently leading to a vast increase of data acquisition rates and data quantity. On the other hand, access time to the most advanced ARPES instruments remains strictly limited, calling for fast, effective, and on-the-fly data analysis tools to exploit this time. In response to this need, we introduce ARPESNet, a versatile autoencoder network that efficiently summmarises and compresses ARPES datasets. We train ARPESNet on a large and varied dataset of 2-dimensional ARPES data extracted by cutting standard 3-dimensional ARPES datasets along random directions in $\mathbf{k}$. To test the data representation capacity of ARPESNet, we compare $k$-means clustering quality between data compressed by ARPESNet, data compressed by discrete cosine transform, and raw data, at different noise levels. ARPESNet data excels in clustering quality despite its high compression ratio.

cond-mat.mtrl-sci↗

arXiv2024

Kramers nodal line in the charge density wave state of YTe$_3$ and the influence of twin domains

Recent studies have focused on the relationship between charge density wave (CDW) collective electronic ground states and nontrivial topological states. Using angle-resolved photoemission and density functional theory, we establish that YTe$_3$ is a CDW-induced Kramers nodal line (KNL) metal, a newly proposed topological state of matter. YTe$_3$ is a non-magnetic quasi-2D chalcogenide with a CDW wave vector ($q_{\rm cdw}$) of 0.2907c$^*$. Scanning tunneling microscopy and low energy electron diffraction revealed two orthogonal CDW domains, each with a unidirectional CDW and similar YTe$_3$. The effective band structure (EBS) computations, using DFT-calculated folded bands, show excellent agreement with ARPES because a realistic x-ray crystal structure and twin domains are considered in the calculations. The Fermi surface and ARPES intensity plots show weak shadow bands displaced by $q_{\rm cdw}$ from the main bands. These are linked to CDW modulation, as the EBS calculation confirms. Bilayer split main and shadow bands suggest the existence of crossings, according to theory and experiment. DFT bands, including spin-orbit coupling, indicate a nodal line along the $\Sigma$ line from multiple band crossings perpendicular to the KNL. Additionally, doubly degenerate bands are only found along the KNL at all energies, with some bands dispersing through the Fermi level.

cond-mat.mtrl-sci↗

arXiv2023

Charge transfer-induced Lifshitz transition and magnetic symmetry breaking in ultrathin CrSBr crystals

Ultrathin CrSBr flakes are exfoliated \emph{in situ} on Au(111) and Ag(111) and their electronic structure is studied by angle-resolved photoemission spectroscopy. The thin flakes' electronic properties are drastically different from those of the bulk material and also substrate-dependent. For both substrates, a strong charge transfer to the flakes is observed, partly populating the conduction band and giving rise to a highly anisotropic Fermi contour with an Ohmic contact to the substrate. The fundamental CrSBr band gap is strongly renormalized compared to the bulk. The charge transfer to the CrSBr flake is substantially larger for Ag(111) than for Au(111), but a rigid energy shift of the chemical potential is insufficient to describe the observed band structure modifications. In particular, the Fermi contour shows a Lifshitz transition, the fundamental band gap undergoes a transition from direct on Au(111) to indirect on Ag(111) and a doping-induced symmetry breaking between the intra-layer Cr magnetic moments further modifies the band structure. Electronic structure calculations can account for non-rigid Lifshitz-type band structure changes in thin CrSBr as a function of doping and strain. In contrast to undoped bulk band structure calculations that require self-consistent $GW$ theory, the doped thin film properties are well-approximated by density functional theory if local Coulomb interactions are taken into account on the mean-field level and the charge transfer is considered.

cond-mat.str-el↗

arXiv2023

Paramagnetic Electronic Structure of CrSBr: Comparison between Ab Initio GW Theory and Angle-Resolved Photoemission Spectroscopy

We explore the electronic structure of paramagnetic CrSBr by comparative first principles calculations and angle-resolved photoemission spectroscopy. We theoretically approximate the paramagnetic phase using a supercell hosting spin configurations with broken long-range order and applying quasiparticle self-consistent $GW$ theory, without and with the inclusion of excitonic vertex corrections to the screened Coulomb interaction (QS$GW$ and QS$G\hat{W}$, respectively). Comparing the quasi-particle band structure calculations to angle-resolved photoemission data collected at 200 K results in excellent agreement. This allows us to qualitatively explain the significant broadening of some bands as arising from the broken magnetic long-range order and/or electronic dispersion perpendicular to the quasi two-dimensional layers of the crystal structure. The experimental band gap at 200 K is found to be at least 1.51 eV at 200 K. At lower temperature, no photoemission data can be collected as a result of charging effects, pointing towards a significantly larger gap, which is consistent with the calculated band gap of $\approx$ 2.1 eV.

cond-mat.str-el↗

arXiv2023

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases.

cond-mat.str-el↗

arXiv2022

Charge density wave induced nodal lines in LaTe$_3$

LaTe$_3$ is a noncentrosymmetric (NC) material with time reversal (TR) symmetry in which the charge density wave (CDW) is hosted by the Te bilayers. Here, we show that LaTe$_3$ hosts a Kramers nodal line (KNL), a twofold degenerate nodal line that connects the TR invariant momenta in NC achiral systems, using angle resolved photoemission spectroscopy (ARPES), density functional theory (DFT), effective band structure (EBS) calculated by band unfolding, and symmetry arguments. DFT incorporating spin-orbit coupling (SOC) reveals that the KNL -- protected by the TR and lattice symmetries -- imposes gapless crossings between the bilayer-split CDW-induced shadow bands and the main bands. In excellent agreement with the EBS, ARPES data corroborate the presence of the KNL and show that the crossings traverse the Fermi level. Furthermore, spinless nodal lines - entirely gapped out by the SOC - are formed by the linear crossings of the shadow and main bands with a high Fermi velocity.

cond-mat.mtrl-sci↗

arXiv2022

In-situ exfoliation method of large-area 2D materials

The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in unveiling new properties of 2D materials but it requires samples to be free of adsorbates. The technique that most easily and readily yields 2dmaterials of highest quality is indubitably mechanical exfoliation from bulk grown samples, however as this technique is traditionally done in dedicated environment, the transfer of these samples into UHV setups requires some form of surface cleaning that tempers with the sample quality. In this article, we report on a simple and general method of \textit{in-situ} mechanical exfoliation directly in UHV that yields large-area single-layered films. By employing standard UHV cleaning techniques and by purpusedly exploiting the chemical affinity between the substrate and the sample we could yield large area exfoliation of transition metal dichalcogenides. Multiple transition metal dichalcogenides, both metallic and semiconducting, are exfoliated \textit{in-situ} onto Au and Ag, and Ge. Exfoliated flakes are found to be sub-milimeter size with excellent crystallinity and purity, as evidenced by angle-resolved photoemission spectroscopy, atomic force microscopy and low-energy electron diffraction. In addition, we demonstrate exfoliation of air-sensitive 2D materials and possibility of controlling the substrate-2D material twist angle.

cond-mat.mtrl-sci↗

arXiv2022

Charge density wave-generated Fermi surfaces in NdTe$_3$

The electronic structure of NdTe$_3$ in the charge density wave phase (CDW) is investigated by angle-resolved photoemission spectroscopy. The combination of high-quality crystals and careful surface preparation reveals subtle and previously unobserved details in the Fermi surface topology, allowing an interpretation of the rich and unexplained quantum oscillations in the rare earth tritellurides RTe$_3$. In particular, several closed Fermi surface elements can be observed that are related to CDW-induced replicas of the original bands, leading to the curious situation in which a CDW does not only remove Fermi surface elements but creates new ones that are observable in transport experiments. Moreover, a large residual Fermi surface is found in the CDW gap, very close to the position of the gapped normal-state Fermi surface. Its area agrees very well with high-frequency quantum oscillations in NdTe$_3$ and its presence is explained by strong electron-phonon coupling combined with the quasi one-dimensional character of the CDW. Finally, we identify the origin of the low-frequency $α$ quantum oscillations ubiquitous for the lighter R elements in the RTe$_3$ family and responsible for the high mobility in these compounds.

cond-mat.str-el↗

arXiv2022

Epitaxial growth of a two-dimensional topological insulator candidate: monolayer Si2Te2

Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth of ML-Si2Te2 films on Sb2Te3 thin film substrates. High-quality (1*1) ML-Si2Te2 films with a coverage as high as 95% were obtained as revealed by scanning tunneling microscopy. X-ray photoelectron spectroscopy confirms the absence of intermixing between Si2Te2 and Sb2Te3 at the interface. By combining scanning tunneling spectroscopy with density functional theory calculations, we demonstrate the semiconducting band structure of ML-Si2Te2 on Sb2Te3. Furthermore, it is theoretically predicted that the system can be driven into the nontrivial phase via reducing the strain by 4.4% using strain engineering. Our results pave the way for in-depth investigations on this 2D topological insulator candidate.

cond-mat.mtrl-sci↗

arXiv2022

One-dimensional electronic states in a natural misfit structure

Misfit compounds are thermodynamically stable stacks of two-dimensional materials, forming a three-dimensional structure that remains incommensurate in one direction parallel to the layers. As a consequence, no true bonding is expected between the layers, with their interaction being dominated by charge transfer. In contrast to this well-established picture, we show that interlayer coupling can strongly influence the electronic properties of one type of layer in a misfit structure, in a similar way to the creation of modified band structures in an artificial moiré structure between two-dimensional materials. Using angle-resolved photoemission spectroscopy with a micron-scale light focus, we selectively probe the electronic properties of hexagonal NbSe$_2$ and square BiSe layers that terminate the surface of the (BiSe)$_{1+δ}$NbSe$_2$ misfit compound. We show that the band structure in the BiSe layers is strongly affected by the presence of the hexagonal NbSe$_2$ layers, leading to quasi one-dimensional electronic features. The electronic structure of the NbSe$_2$ layers, on the other hand, is hardly influenced by the presence of the BiSe. Using density functional theory calculations of the unfolded band structures, we argue that the preferred modification of one type of bands is mainly due to the atomic and orbital character of the states involved, opening a promising way to design novel electronic states that exploit the partially incommensurate character of the misfit compounds.

cond-mat.mtrl-sci↗

arXiv2022

Emergence of non-Fickian transport in truncated pluri-Gaussian permeability fields

We present a numerical simulation study of advective-diffusive scalar transport in three-dimensional high-contrast discontinuous permeability fields, generated with a truncated pluri-Gaussian geostatistical approach. A range of permeability contrasts, correlation lengths, and Péclet numbers are studied to characterise the transition to non-Fickian transport behaviour. This is triggered by high permeability contrasts between different zones and is enhanced by the presence of connected higher permeability channels, which are characterised by high advective flow velocities. In this case, the overall transport behaviour deviate from the macroscopic advection-dispersion model based on a Fickian analogy. The numerical experiments are run with an Eulerian approach using a novel unified numerical framework based on the finite-volume library \of, for i) generating random pluri-Gaussian porous media, ii) solving the steady state Darcy-scale flow, iii) solving the advection diffusion equation, iv) computing post-processing quantities such as first order statistics, spatial probability density functions and breakthrough curves. We identify a hierarchy of non-Fickian transport triggering factors, the strength of permebility contrast being the pivotal driver. The Péclet number and the characteristic length at which facies transitions are observed as secondary factors. Transport remains Fickian when the facies conductivities differ by up to one order of magnitude. Greater permeability contrasts act strengthen the emergence of fast flow channels leading to non-Fickian transport.

physics.geo-ph↗

arXiv2021

Single-crystal graphene on Ir(110)

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).

cond-mat.mtrl-sci↗