arXiv subjects

Marcus Freitag

Publications and source records attributed to Marcus Freitag.

26 records · Page 2Linked to original sources

arXiv2009

Photocurrent imaging and efficient photon detection in a graphene transistor

We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal controlled graphene and bulk graphene channel is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, VDirac, the original p-type graphene channel turns into a p-n-p channel. When light is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are involved in photon detection.

cond-mat.mtrl-sci↗

arXiv2009

Energy dissipation in graphene field-effect transistors

We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm^(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and heating rate, we have to include heat-flow from the graphene to the gate oxide underneath, especially at elevated temperatures, where the graphene thermal conductivity is lowered due to umklapp scattering. Velocity saturation due to phonons with about 50 meV energy is inferred from the measured charge density via shifts in the Raman G-phonon band, suggesting that remote scattering (through field coupling) by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene.

cond-mat.mtrl-sci↗

arXiv2009

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while it increases for bi-layer/tri-layer graphene. This can be explained by the different density of states in mono-layer and bi-layer/tri-layer graphenes. In mono-layer, the mobility also decreases with increasing temperature primarily due to surface polar substrate phonon scattering. In bi-layer/tri-layer graphene, on the other hand, the mobility increases with temperature because the field of the substrate surface phonons is effectively screened by the additional graphene layer(s) and the mobility is dominated by Coulomb scattering. We also find that the temperature dependence of the Hall coefficient in mono-, bi- and tri-layer graphene can be explained by the formation of electron and hole puddles in graphene. This model also explains the temperature dependence of the minimum conductance of mono-, bi- and tri-layer graphene. The electrostatic potential variations across the different graphene samples are extracted.

cond-mat.mes-hall↗

arXiv2009

How does the substrate affect the Raman and excited state spectra of a carbon nanotube?

We study the optical properties of a single, semiconducting single-walled carbon nanotube (CNT) that is partially suspended across a trench and partially supported by a SiO2-substrate. By tuning the laser excitation energy across the E33 excitonic resonance of the suspended CNT segment, the scattering intensities of the principal Raman transitions, the radial breathing mode (RBM), the G-mode and the D-mode show strong resonance enhancement of up to three orders of magnitude. In the supported part of the CNT, despite a loss of Raman scattering intensity of up to two orders of magnitude, we recover the E33 excitonic resonance suffering a substrate-induced red shift of 50 meV. The peak intensity ratio between G-band and D-band is highly sensitive to the presence of the substrate and varies by one order of magnitude, demonstrating the much higher defect density in the supported CNT segments. By comparing the E33 resonance spectra measured by Raman excitation spectroscopy and photoluminescence (PL) excitation spectroscopy in the suspended CNT segment, we observe that the peak energy in the PL excitation spectrum is red-shifted by 40 meV. This shift is associated with the energy difference between the localized exciton dominating the PL excitation spectrum and the free exciton giving rise to the Raman excitation spectrum. High-resolution Raman spectra reveal substrate-induced symmetry breaking, as evidenced by the appearance of additional peaks in the strongly broadened Raman G band. Laser-induced line shifts of RBM and G band measured on the suspended CNT segment are both linear as a function of the laser excitation power. Stokes/anti-Stokes measurements, however, reveal an increase of the G phonon population while the RBM phonon population is rather independent of the laser excitation power.

cond-mat.mtrl-sci↗

arXiv2005

Device modeling of long-channel nanotube electro-optical emitter

We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides.

cond-mat.other↗

arXiv2002

Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.

cond-mat.mes-hall↗

arXiv2002

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode.

cond-mat.mes-hall↗

arXiv2002

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies (SPM). Based on experimental observations, an analytical form for the differential tip-surface capacitance is obtained.

cond-mat.mes-hall↗