arXiv subjects

Marcus V. O. Moutinho

Publications and source records attributed to Marcus V. O. Moutinho.

5 recordsLinked to original sources

arXiv2026

Surface lone-pair polarization probed by quantum-geometric transport in tellurium

Stereochemically active lone pairs are ubiquitous microscopic sources of polarity in molecules and solids, but their collective behavior in crystals is often hidden by symmetry or confined to surfaces. Here we show that quantum-geometry transport provides a sensitive probe of surface lone-pair polarization in trigonal tellurium. This surface polarization appears microscopically as an inversion-odd dipolar component of the crystal potential, which shifts the center of mass of Bloch wavepackets and produces quantum-geometric corrections to their velocity. We describe this lone-pair polar texture through a minimal three-component lattice model, and we show that the resulting linear and nonlinear transport coefficients probe, respectively, the second and first moments of the net polarization field. Because rectified voltages in tellurium flakes are directly proportional to the surface lone-pair polarization, our results provide a microscopic route to understanding and engineering polarization-driven, quantum-geometric electronic devices based on tellurium allotropes.

cond-mat.mes-hall↗

arXiv2026

Polar unidirectional magnetotransport in $p-$type tellurene from quantum geometry

Unidirectional magnetoresistance, or electric magnetochiral anisotropy (eMChA), is a nonlinear magnetotransport phenomenon that arises in noncentrosymmetric conductors , where changes in resistance $R(B)$ are: (i) chiral, $ΔR(B)/R(0)=2\,χ\, {\bf I}\cdot{\bf B}$, or (ii) polar, $ΔR(B)/R(0)=2\,γ\, {\bf I}\cdot({\bf P}\times{\bf B})$, with eMChA coefficients $χ$ and $γ$. In [Phys. Rev. Lett. 135, 106602 (2025)], we showed that the eMChA in the conduction band of tellurene is polar ($χ=0$, $γ\neq 0$) and emerges from the quantum metric dipole due to its Weyl node and from the lone pair polarization ${\bf P}$. Here, we extend our work to the valence band of tellurene, where the eMChA is usually said to be chiral ($χ\neq 0, γ= 0$). We show that also a polar coefficient $γ\neq 0$ emerges naturally through a downfolding procedure, in which remote Weyl-node containing bands induce momentum-space gradients of the quantum metric in the low-energy levels, activating finite metric dipoles. Combining semiclassical Boltzmann transport with a ${\bf k}\cdot{\bf p}$ description of tellurene, our numerical calculations agree quantitatively with doping ($μ$) dependent second-harmonic measurements of the longitudinal voltage $V^{2ω}_\parallel(μ)$ in perpendicular field. The combined chiral and polar characters ($χ\neq0, γ\neq 0)$ of the eMChA in tellurene also explains the shift in the angular ($ϕ$) dependence of $V^{2ω}_\parallel(ϕ)$ for in plane fields. Our results demonstrate that the polar eMChA can arise in topologically trivial bands through multiband effects and establishes tellurene as a platform for quantum-geometric rectification in both electron and hole regimes.

cond-mat.mes-hall↗

arXiv2025

Gate-Tunable Giant Negative Magnetoresistance in Tellurene Driven by Quantum Geometry

Negative magnetoresistance in conventional two-dimensional electron gases is a well-known phenomenon, but its origin in complex and topological materials, especially those endowed with quantum geometry, remains largely elusive. Here, we report the discovery of a giant negative magnetoresistance, reaching a remarkable $- 90\%$ of the resistance at zero magnetic field, $R_0$, in $n$-type tellurene films. This record-breaking effect persists over a wide magnetic field range (measured up to $35$ T) at cryogenic temperatures and is suppressed when the chemical potential shifts away from the Weyl node in the conduction band, strongly suggesting a quantum geometric origin. We propose two novel mechanisms for this phenomenon: a quantum geometric enhancement of diffusion and a magnetoelectric spin interaction that locks the spin of a Weyl fermion, in cyclotron motion under crossed electric $\boldsymbol{\cal E}$ and magnetic ${\bf B}$ fields, to its guiding-center drift, $(\boldsymbol{\cal E}\times{\bf B})\cdotσ$. We show that the time integral of the velocity auto-correlations promoted by the quantum metric between the spin-split conduction bands enhance diffusion, thereby reducing the resistance. This mechanism is experimentally confirmed by its unique magnetoelectric dependence, $ΔR_{zz}(\boldsymbol{\cal E},{\bf B})/R_0=-β_{g}(\boldsymbol{\cal E}\times{\bf B})^2$, with $β_{g}$ determined by the quantum metric. Our findings establish a new, quantum geometric and non-Markovian memory effect in magnetotransport, paving the way for controlling electronic transport in complex and topological matter.

cond-mat.mes-hall↗

arXiv2025

Quantum geometry and the electric magnetochiral anisotropy in noncentrosymmetric polar media

The electric magnetochiral anisotropy is a nonreciprocal phenomenon accessible via second harmonic transport in noncentrosymmetric, time-reversal invariant materials, in which the rectification of current, ${\bf I}$, can be controlled by an external magnetic field, ${\bf B}$. Quantum geometry, which characterizes the topology of Bloch electrons in a Hilbert space, provides a powerful description of the nonlinear dynamics in topological materials. Here, we demonstrate that the electric magnetochiral anisotropy in noncentrosymmetric polar media owes its existence to the quantum metric, arising from the spin-orbit coupling, and to large Born effective charges. In this context, the reciprocal magnetoresistance $β{\bf B}^2$ is modified to $R( I,P,B)=R_0[1+βB^2 + γ^{\pm}{\bf I}\cdot({\bf P}\times{\bf B})]$, where the chirality dependent $γ^{\pm}$ is determined by the quantum metric dipole and the polarization ${\bf P}$. We predict a universal scaling $γ^{\pm}(V)\sim V^{-5/2}$ which we verified by phase sensitive, second harmonic transport measurements on hydrothermally grown 2D tellurium films under applied gate voltage, $V$. The control of rectification by varying ${\bf I}$, ${\bf P}$, ${\bf B}$, and $V$, demonstrated in this work, opens up new avenues for the building of ultra-scaled CMOS circuits.

cond-mat.mes-hall↗

arXiv2021

Angle-tunable intersubband photoabsorption and enhanced photobleaching in twisted bilayer graphene

Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer twist angle has opened new possibilities for tailoring the optoelectronic properties of these heterostructures. Twisted bilayer graphene with a strong interlayer coupling is a prototype of twisted heterostructure inheriting the intriguing electronic properties of graphene. Understanding the effects of the twist angle on its out-of-equilibrium optical properties is crucial for devising optoelectronic applications. With this aim, we here combine excitation-resolved hot photoluminescence with femtosecond transient absorption microscopy. The hot charge carrier distribution induced by photo-excitation results in peaked absorption bleaching and photo-induced absorption bands, both with pronounced twist angle dependence. Theoretical simulations of the electronic band structure and of the joint density of states enable to assign these bands to the blocking of interband transitions at the van Hove singularities and to photo-activated intersubband transitions. The tens of picoseconds relaxation dynamics of the observed bands is attributed to the angle-dependence of electron and phonon heat capacities of twisted bilayer graphene.

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