arXiv subjects

Marek Korkusinski

Publications and source records attributed to Marek Korkusinski.

At least 37 records · Page 2Linked to original sources

arXiv2020

Optimizing lateral quantum dot geometries for reduced exchange noise

For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise.

cond-mat.mes-hall↗

arXiv2020

Accurate and efficient description of interacting carriers in quantum nanostructures by selected configuration interaction and perturbation theory

We present a method to calculate many-body states of interacting carriers in million atom quantum nanostructures based on atomistic tight-binding calculations and a combination of iterative selection of configurations and perturbation theory. This method enables investigations of large excitonic complexes and multi-electron systems with near full configuration interaction accuracy, even though only a small subspace of the full many-body Hilbert space is sampled, thus saving orders of magnitudes in computational resources. Important advantages of this method are that the convergence is controlled by a single parameter, the threshold, and that ground and excited states can be treated on an equal footing. We demonstrate the extreme efficiency of the method by numerical studies of complexes composed of up to 13 excitons, which requires filling of states up to the fourth electronic shell. We find that the method generally converges fast as a function of the threshold, profiting from a significant enhancement due to the perturbative corrections. The role of the choice of single-particle basis states is discussed. It is found that the algorithm converges faster in the Hartree-Fock basis only for highly charged systems, where Coulomb repulsion dominates. Finally, based on the observation that second order perturbative energy corrections only depend on off-diagonal elements of the many-body Hamiltonian, we present a way to accurately calculate many-body states that requires only a relatively small number of Coulomb matrix elements.

cond-mat.mes-hall↗

arXiv2019

Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots

We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle states and excitonic, biexcitonic and trion complexes as well as emission spectra as a function of the quantum dot height, diameter and As versus P concentration. The atomistic tight-binding parameters for InAs and InP in the wurtzite crystal phase were obtained by ab initio methods corrected by empirical band gaps. The low energy electron and hole states form electronic shells similar to parabolic or cylindrical quantum confinement, only weakly affected by hexagonal symmetry and As fluctuations. The relative alignment of the emission lines from excitons, trions and biexcitons agrees with that for InAs/InP dots in the zincblende phase in that biexcitons and positive trions are only weakly bound. The random distribution of As atoms leads to dot-to-dot fluctuations of a few meV for the single-particle states and the spectral lines. Due to the high symmetry of hexagonal InAsP nanowire quantum dots the exciton fine structure splitting is found to be small, of the order a few $μ$eV with significant random fluctuations in accordance with experiments.

cond-mat.mes-hall↗

arXiv2019

Theory of atomic scale quantum dots in silicon: dangling bond quantum dots on silicon surface

We present here a theory and a computational tool, Silicon-{\sc Qnano}, to describe atomic scale quantum dots in Silicon. The methodology is applied to model dangling bond quantum dots (DBQDs) created on a passivated H:Si-(100)-(2$\times$1) surface by removal of a Hydrogen atom. The electronic properties of DBQD are computed by embedding it in a computational box of Silicon atoms. The surfaces of the computational box were constructed by using DFT as implemented in {\sc Abinit} program. The top layer was reconstructed by the formation of Si dimers passivated with H atoms while the bottom layer remained unreconstructed and fully saturated with H atoms. The computational box Hamiltonian was approximated by a tight-binding (TB) Hamiltonian by expanding the electron wave functions as a Linear Combination of Atomic Orbitals and fitting the bandstructure to {\it ab-initio} results. The parametrized TB Hamiltonian was used to model large finite Si(100) boxes (slabs) with number of atoms exceeding present capabilities of {\it ab-initio} calculations. The removal of one hydrogen atom from the reconstructed surface resulted in a DBQD state with wave function strongly localized around the Si atom and energy in the silicon bandgap. The DBQD could be charged with zero, one and two electrons. The Coulomb matrix elements were calculated and the charging energy of a two electron complex in a DBQD obtained.

cond-mat.mtrl-sci↗

arXiv2018

Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

cond-mat.mes-hall↗

arXiv2017

Landau-Zener-Stuckelberg-Majorana interferometry of a single hole

We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flipping interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flipping, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

cond-mat.mes-hall↗

arXiv2015

Electron-Electron interactions, topological phase and optical properties of a charged artificial benzene ring

We present a theory of the electronic and optical properties of a charged artificial benzene ring (ABR). The ABR is described by the extended Hubbard model solved using exact diagonalization methods in both real and Fourier space as a function of tunneling matrix element t, Hubbard on-site repulsion U and inter-dot interaction V. In the strongly interacting case we present exact analytical results for the spectrum of the hole in a half-filled ABR dressed by spin excitations of remaining electrons. The spectrum is interpreted in terms of the appearance of a topological phase associated with an effective gauge field piercing through the ring. We show that the maximally spin polarized (S=5/2) and maximally spin depolarised (S=1/2) states are the lowest energy, orbitally non degenerate, states. We discuss the evolution of the phase diagram and level crossings as interactions are switched off and the ground state becomes spin non-degenerate but orbitally degenerate S=1/2. We present a theory of optical absorption spectra and show that the evolution of the ground and excited states, level crossings and presence of artificial gauge can be detected optically.

cond-mat.mes-hall↗

arXiv2014

Electron-electron interaction mediated indirect coupling of electron and magnetic ion or nuclear spins in self-assembled quantum dots

We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins of electrons occupying the zero angular momentum states couple directly to the localized spin. We show that when the electron-electron interactions are included, the electrons occupying finite angular momentum orbitals interact with the localized spin. This effective interaction is obtained using exact diagonalization of the microscopic Hamiltonian as a function of the number of electronic shells, shell spacing, and anisotropy of the electron-Mn exchange interaction. The effective interaction can be engineered to be either ferromagnetic or antiferromagnetic by tuning the parameters of the quantum dot.

cond-mat.mes-hall↗

arXiv2014

Quantum strain sensor with a topological insulator HgTe quantum dot

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.

cond-mat.mes-hall↗

arXiv2012

Spin textures in strongly coupled electron spin and magnetic or nuclear spin systems in quantum dots

Controlling electron spins strongly coupled to magnetic and nuclear spins in solid state systems is an important challenege in the field of spintronics and quantum computation. We show here that electron droplets with no net spin in semiconductor quantum dots strongly coupled with magnetic ion/nuclear spin systems break down at low temperature and form a non-trivial anti-ferromagnetic spatially ordered spin-texture of magneto-polarons. The spatially ordered combined electron-magnetic ion spin-texture, associated with spontaneous symmetry-breaking in the parity of electronic charge density and magnetization of magnetic ions, emerge from both ab-initio density functional approach to the electronic system coupled with mean-field approximation for the magnetic/nuclear spin system and fully mircoscopic exact diagonalization of small systems. The predicted phase diagram determines the critical temperature as a function of coupling strength and identifies possible phases of the strongly coupled spin system. This prediction may arrest fluctuations in spin system and open the way to control, manipulate and prepare magnetic and nuclear spin ensembles in semiconductor nanostructures.

cond-mat.mes-hall↗

arXiv2011

Theory of highly excited semiconductor nanostructures including Auger coupling: exciton-bi-exciton mixing in CdSe nanocrystals

We present a theory of highly excited interacting carriers confined in a semiconductor nanostructure, incorporating Auger coupling between excited states with different number of excitations. The Coulomb matrix elements connecting exciton, bi-exciton and tri-exciton complexes are derived and an intuitive picture of breaking neutral multi-exction complexes into positively and negatively charged multi-exciton complexes is given. The general approach is illustrated by analyzing the coupling of biexciton and exciton in CdSe spherical nanocrystals. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting and surface passivation. For each number of electron-hole pairs the many-body spectrum is computed in the configuration-interaction approach. The low-energy correlated biexciton levels are broken into charged complexes: a hole and a negatively charged trion and an electron and a positively charged trion. Out of a highly excited exciton spectrum a subspace coupled to bi-exciton levels via Auger processes is identified. The interaction between correlated bi-exciton and exciton states is treated using exact diagonalization techniques. This allows to extract the spectral function of the biexciton and relate its characteristic width and amplitude to the characteristic amplitude and timescale of the coherent time evolution of the coupled system. It is shown that this process can be described by the Fermi's Golden Rule only if a fast relaxation of the excitonic subsystem is accounted for.

cond-mat.mes-hall↗

arXiv2010

Fine structure and size dependence of exciton and bi-exciton optical spectra in CdSe nanocrystals

Theory of electronic and optical properties of exciton and bi-exciton complexes confined in CdSe spherical nanocrystals is presented. The electron and hole states are computed using atomistic $sp^3d^5s^*$ tight binding Hamiltonian including an effective crystal field splitting, spin-orbit interactions, and model surface passivation. The optically excited states are expanded in electron-hole configurations and the many-body spectrum is computed in the configuration-interaction approach. Results demonstrate that the low-energy electron spectrum is organized in shells ($s$, $p$, ...), whilst the valence hole spectrum is composed of four low-lying, doubly degenerate states separated from the rest by a gap. As a result, the bi-exciton and exciton spectrum is composed of a manifold of closely lying states, resulting in a fine structure of exciton and bi-exciton spectra. The quasi-degenerate nature of the hole spectrum results in a correlated bi-exciton state, which makes it slowly convergent with basis size. We carry out a systematic study of the exciton and bi-exciton emission spectra as a function of the nanocrystal diameter and find that the interplay of repulsion between constituent excitons and correlation effects results in a change of the sign of bi-exciton binding energy from negative to positive at a critical nanocrystal size.

cond-mat.mes-hall↗

arXiv2010

Valence holes as Luttinger spinor based qubits in quantum dots

We present a theory of valence holes as Luttinger spinor based qubits in p-doped self-assembled quantum dots within the 4-band $k\cdot p$ formalism. The two qubit levels are identified with the two chiralities of the doubly degenerate ground state. We show that single qubit operations can be implemented with static magnetic field applied along the $z$ and $x$ directions, acting analogously to the $\hatσ_z$ and $\hatσ_x$ operators in the qubit subspace respectively. The coupling of two dots and hence the double qubit operations are shown to be sensitive to the orientation of the two quantum dots. For vertical qubit arrays, there exists an optimal qubit separation suitable for the voltage control of qubit-qubit interactions.

cond-mat.str-el↗

arXiv2009

Multimillion Atom Simulations with NEMO 3-D

The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representation of the underlying material become important. The variety of geometries, materials, and doping configurations in semiconductor devices at the nanoscale suggests that a general nanoelectronic modeling tool is needed. The Nanoelectronic Modeling tool (NEMO 3-D) has been developed to address these needs. Based on the atomistic valence-force field (VFF) method and a variety of nearest-neighbor tight-binding models, NEMO 3-D enables the computation of strain for over 64 million atoms and of electronic structure for over 52 million atoms, corresponding to volumes of (110nmx110nmx110nm) and (101nmx101nmx101nm), respectively. This article discusses the theoretical models, essential algorithmic and computational components, and optimization methods that have been used in the development and the deployment of NEMO 3-D. Also, successful applications of NEMO 3-D are demonstrated in the atomistic calculation of single-particle electronic states of (1) self-assembled quantum dots including long-range strain and piezoelectricity; (2) stacked quantum dots ; (3) Phosphorus impurities in Silicon used in quantum computation; (4) Si on SiGe quantum wells (QWs); and (5) SiGe nanowires.

physics.comp-ph↗

arXiv2008

Stability Diagram of a Few-Electron Triple Dot

Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models.

cond-mat.mes-hall↗

arXiv2007

Voltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot

Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry.

quant-ph↗

arXiv2007

LCHO-CI method for the voltage control of exchange interaction in gated lateral quantum dot networks

We present a computational LCHO-CI approach allowing for the simulation of exchange interactions in gated lateral quantum dot networks. The approach is based on single-particle states calculated using a linear combination of harmonic orbitals (LCHO) of each of the dots, and a configuration interaction (CI) approach to the interacting electron problem. The LCHO-CI method is applied to a network of three quantum dots with one electron spin per dot, and a Heisenberg spin Hamiltonian is derived. The manipulation of spin states of a three-spin molecule by applying bias to one of the dots is demonstrated and related to the bias dependence of effective exchange interaction parameters.

cond-mat.mes-hall↗

arXiv2007

Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device.

cond-mat.mes-hall↗