arXiv subjects

Marek Potemski

Publications and source records attributed to Marek Potemski.

53 records · Page 3Linked to original sources

arXiv2017

Magnetic field induced polarization enhancement in monolayers of tungsten dichalcogenides: Effects of temperature

Optical orientation of localized/bound excitons is shown to be effectively enhanced by the application of magnetic fields as low as 20 mT in monolayer WS$_2$. At low temperatures, the evolution of the polarization degree of different emission lines of monolayer WS$_2$ with increasing magnetic fields is analyzed and compared to similar results obtained on a WSe$_2$ monolayer. We study the temperature dependence of this effect up to $T=60$ K for both materials, focusing on the dynamics of the valley pseudospin relaxation. A rate equation model is used to analyze our data and from the analysis of the width of the polarization deep in magnetic field we conclude that the competition between the dark exciton pseudospin relaxation and the decay of the dark exciton population into the localized states are rather different in these two materials which are representative of the two extreme cases for the ratio of relaxation rate and depolarization rate.

cond-mat.mes-hall↗

arXiv2016

Magnetic-field-induced abrupt spin state transition in a quantum dot containing magnetic ions

We present the results of a comprehensive magneto-optical characterization of single CdTe quantum dots containing a few Mn2+ ions. We find that some quantum dots exhibit an unexpected evolution of excitonic photoluminescence spectrum with the magnetic field. At a certain value of the magnetic field, specific for every quantum dot, each of the broad spectral lines related to the recombination of various excitonic complexes confined inside the dot transforms into a pair of narrow lines split by several meV. We interpret this abrupt change in the character of excitonic emission spectrum as a consequence of a transition from a non-polarized state of the Mn2+ spins in a low field regime to a highly (almost fully) polarized state above the critical magnetic field. Various optical experiments, including polarization-resolved studies, investigation of different excitation regimes and time-resolved measurements corroborate this scenario. However, these measurements indicate also that the observed effect is not related or influenced by the photo-created charge carriers, but it is rather originating from unusual spin configuration in the cluster of Mn2+ ions.

cond-mat.mes-hall↗

arXiv2016

Radiatively limited dephasing and exciton dynamics in MoSe$_2$ monolayers

By implementing four-wave mixing (FWM) micro-spectroscopy we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe$_2$. We reveal their dephasing times T$_2$ and radiative lifetime T$_1$ in a sub-picosecond (ps) range, approaching T$_2$=2T$_1$, and thus indicating radiatively limited dephasing at a temperature of 6$\,$K. We elucidate the dephasing mechanisms by varying the temperature and by probing various locations on the flake exhibiting a different local disorder. At a nanosecond range, we observe the residual FWM produced by the incoherent excitons, which initially disperse towards the dark states, but then relax back to the optically active states within the light cone. By introducing polarization-resolved excitation, we infer inter-valley exciton dynamics, showing an initial polarization degree of around 30$\,\%$, constant during the initial sub-picosecond decay, followed by the depolarization on a picosecond timescale. The FWM hyperspectral imaging reveals the doped and undoped areas of the sample, allowing to investigate the neutral exciton, the charged one or both transitions at the same time. In the latter case, we observe the exciton-trion beating in the coherence evolution indicating their coherent coupling.

cond-mat.mes-hall↗

arXiv2015

Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

We present the micro-photoluminescence ($μ$PL) and micro-reflectance contrast spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard formalisms previously developed for semiconductors. A peculiar shape of the optical response of the ground state (A) exciton in monolayer MoSe2 is tentatively attributed to the appearance of Fano-type resonance. Rather trivial and clearly decaying PL spectra of monolayer MoSe2 with temperature confirm that the ground state exciton in this material is optically bright in contrast to a dark exciton ground state in monolayer WSe2.

cond-mat.mes-hall↗

arXiv2015

Indirect-to-direct band-gap crossover in few-layer MoTe$_2$

We study the evolution of the band-gap structure in few-layer MoTe$_2$ crystals, by means of low-temperature micro-reflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that, in complete analogy with other semiconducting transition metal dichalchogenides (TMDs), the dominant PL emission peaks originate from direct transitions associated to recombination of excitons and trions. When we follow the evolution of the PL intensity as a function of layer thickness, however, we observe that MoTe$_2$ behaves differently from other semiconducting TMDs investigated earlier. Specifically, the exciton PL yield (integrated PL intensity) is identical for mono and bilayer and it starts decreasing for trilayers. A quantitative analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe$_2$ being direct band-gap semiconductors, with tetralayer MoTe$_2$ being an indirect gap semiconductor, and with trilayers having nearly identical direct and indirect gaps.This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides, for which only monolayers are found to be direct band-gap semiconductors, with thicker layers having indirect band gaps that are significantly smaller, by hundreds of meV, than the direct gap. We discuss the relevance of our findings for experiments of fundamental interest and possible future device applications.

cond-mat.mes-hall↗

arXiv2015

SU(4) symmetry breaking revealed by magneto-optical spectroscopy in epitaxial graphene

Refined infrared magnetotransmission experiments have been performed in magnetic fields B up to 35 T on a series of multilayer epitaxial graphene samples. Following the main optical transition involving the n=0 Landau level (LL), we observe a new absorption transition increasing in intensity with magnetic fields B>26 T. Our analysis shows that this is a signature of the breaking of the SU(4) symmetry of the n=0 LL. Using a quantitative model, we show that the only symmetry-breaking scheme consistent with our experiments is a charge density wave (CDW).

cond-mat.str-el↗

arXiv2015

Excitonic resonances in thin films of WSe2: From monolayer to bulk material

We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strength of Coulomb interaction as well. The observed temperature-activated energy shift and broadening of the fundamental direct exciton are well accounted for by standard formalisms used for conventional semiconductors. A large increase of the photoluminescence yield with temperature is observed in WSe2 monolayer, indicating the existence of competing radiative channels. The observation of absorption-type resonances due to both neutral and charged excitons in WSe2 monolayer is reported and the effect of the transfer of oscillator strength from charged to neutral exciton upon increase of temperature is demonstrated.

cond-mat.mes-hall↗

arXiv2015

Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene

The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap at charge neutrality, turning the system into an insulator, as observed experimentally. In mono and (Bernal-stacked) trilayers, interactions, although still important, do not have an equally drastic effect, and these systems remain conducting at low temperature. It may be expected that interaction effects become weaker for thicker multilayers, whose behavior should eventually converge to that of graphite. Here we show that this expectation does not correspond to reality by investigating the case of Bernal-stacked tetralayer graphene (4LG). We reveal the occurrence of a robust insulating state in a narrow range of carrier densities around charge neutrality, incompatible with the behavior expected from the single-particle band structure. The phenomenology resembles that observed in bilayers, but the stronger conductance suppression makes the insulating state in 4LG visible at higher temperature. To account for our findings, we suggest a natural generalization of the interaction-driven, symmetry-broken states proposed for bilayers. This generalization also explains the systematic even-odd effect of interactions in Bernal-stacked layers of different thickness that is emerging from experiments, and has implications for the multilayer-to-graphite crossover.

cond-mat.mes-hall↗

arXiv2014

Probing electronic excitations in mono- to pentalayer graphene by micro-magneto-Raman spectroscopy

We probe electronic excitations between Landau levels in freestanding $N-$layer graphene over a broad energy range, with unprecedented spectral and spatial resolution, using micro-magneto Raman scattering spectroscopy. A characteristic evolution of electronic bands in up to five Bernal-stacked graphene layers is evidenced and shown to remarkably follow a simple theoretical approach, based on an effective bilayer model. $(N>3)$-layer graphene appear as appealing candidates in the quest for novel phenomena, particularly in the quantum Hall effect regime. Our work paves the way towards minimally-invasive investigations of magneto-excitons in other emerging low-dimensional systems, with a spatial resolution down to 1$~μ$m.

cond-mat.mes-hall↗

arXiv2012

Magneto-absorption spectra of hydrogen-like yellow exciton series in cuprous oxide: excitons in strong magnetic fields

We study the absorption spectra of the yellow excitons in Cu$_2$O in high magnetic fields using polarization-resolved optical absorption measurements with a high frequency resolution. We show that the symmetry of the yellow exciton results in unusual selection rules for the optical absorption of polarized light and that the mixing of ortho- and para- excitons in magnetic field is important. Our calculation of the energies of the yellow exciton series in an arbitrary magnetic field gives an excellent fit to experimental data and allows us to understand the complex structure of excitonic levels and their magnetic field dependence, which resolves the old-standing disagreement between the results of optical absorption and cyclotron resonance measurements.

cond-mat.mtrl-sci↗

arXiv2012

Carrier dynamics in epitaxial graphene close to the Dirac point

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical phonon frequency, however, owing to the presence of hot carriers, optical phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.

cond-mat.mtrl-sci↗

arXiv2010

Epitaxial Graphene Electronic Structure And Transport

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.

cond-mat.mes-hall↗

arXiv2008

Approaching the Dirac point in high mobility multi-layer epitaxial graphene

Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low temperature in magnetic fields below 50 mT, allowing thus to probe the nearest vicinity of the Dirac point and to estimate the conductivity in nearly undoped graphene. The carrier mobility is found to exceed 250,000 cm$^2$/(V.s). In the limit of high temperatures, the well-defined Landau level (LL) quantization is observed up to room temperature at magnetic fields below 1 T, a phenomenon unique in solid state systems. A negligible increase in the width of the cyclotron resonance lines with increasing temperature indicates that no important scattering mechanism is thermally activated, supporting recent expectations of high room-temperature mobilities in graphene.

cond-mat.other↗

arXiv2007

Epitaxial graphene

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties which may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material.Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nanoelectronics.

cond-mat.mes-hall↗

arXiv2006

Magneto-optical probing of weak disorder in a two-dimensional hole gas

In two-beam magneto-photoluminescence spectra of a two-dimensional valence hole gas we identify the three-level energy spectrum of a free positive trion with a field-induced singlet-triplet transition. The recombination spectrum of acceptor-bound trions is also detected, including a cyclotron replica corresponding to the hole shake-up process. The emergence of a shake-up peak at low temperature is shown to be a sensitive probe of the presence of a small number of impurities inside the high-mobility quantum well, and its relative position is directly related to the hole cyclotron mass.

cond-mat.mes-hall↗

arXiv2006

Evidence for excitonic polarons in InAs/GaAs quantum dots

We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons.

cond-mat.mtrl-sci↗

arXiv2006

Effect of free carriers and impurities on density of states and optical spectra of two-dimensional magneto-excitons

Density of states (DOS) and absorption spectrum of weakly doped, narrow quantum wells in high magnetic fields are calculated by realistic exact diagonalization. The systems containing an electron--hole pair with and without an additional, second electron are compared. In DOS, the exciton--electron interaction is shown to fill the gaps between Landau levels and to yield additional discrete peaks corresponding to bound trion states. In absorption, interaction with the additional free electron causes no shift or renormalization of main, excitonic peaks. However, it results in additional, weaker peaks associated with bound trions in the lowest or higher Landau levels. The calculation is supplemented with experimental photoluminescence and photoluminescence-excitation studies of two-dimensional holes and electrons in high magnetic fields.

cond-mat.mes-hall↗