arXiv subjects

Maria Barbara Maccioni

Publications and source records attributed to Maria Barbara Maccioni.

8 recordsLinked to original sources

arXiv2026

Magnetic interactions and spin orders in Cr$_8$ and V$_8$ ring-shaped molecular magnets from non-collinear ab initio calculations

We employ density functional theory within a non-collinear framework to investigate the magnetic properties of the octanuclear molecular rings Cr$_8$ and V$_8$. Our aim is to generalize the evaluation of the effective magnetic interactions by explicitly including non-collinear spin configurations, thereby refining our understanding of their dependence upon the underlying electronic structure and molecular geometry. By analyzing the energetics of a variety of magnetic configurations, particularly non-collinear arrangements with neighboring spins oriented along different directions, we move beyond the exchange-only Heisenberg Hamiltonian describing the low-energy sector of the excitation spectrum. This approach enables us to distinguish between in-plane and out-of-plane exchange interactions, and to incorporate biquadratic coupling terms into the effective spin Hamiltonian. We reveal significant antisymmetric exchange interactions of the Dzyaloshinskii-Moriya (DM) type whose dependence on the curvature of the annular structure is clarified by a comparison with the results obtained from linear chains of equal composition. Our work demonstrates that interactions beyond conventional exchange, particularly biquadratic anisotropic terms, in the spin Hamiltonian are essential for accurately capturing the low-energy excitations of these systems. The closest quantitative agreement with experimental results (particularly for the case of Cr$_8$) is achieved when extended Hubbard functionals are used for the evaluation of the effective magnetic couplings.

cond-mat.mtrl-sci↗

arXiv2025

Magnetic properties of Cr$_8$ and V$_8$ molecular rings from ab initio calculations

Molecular nanomagnets are systems with a vast phenomenology and are very promising for a variety of technological applications, most notably spintronics and quantum information. Their low-energy spectrum and magnetic properties can be modeled using effective spin Hamiltonians, once the exchange coupling parameters between the localized magnetic moments are determined. In this work we employ density functional theory (DFT) to compute the exchange parameters between the atomic spins for two representative ring-shaped molecules containing eight transition-metal magnetic ions: Cr$_8$ and V$_8$. Considering a set of properly chosen spin configurations and mapping their DFT energies on the corresponding expressions from a Heisenberg Hamiltonian, we compute the exchange couplings between magnetic ions which are first, second and further neighbors on the rings. In spite of their chemical and structural similarities the two systems exhibit very different ground states: antiferromagnetic for Cr$_8$, ferromagnetic for V$_8$, which also features non-negligible couplings between second nearest neighbors. A rationalization of these results is proposed that is based on a multi-band Hubbard model with less-than-half filled shells on magnetic ions.

cond-mat.mtrl-sci↗

arXiv2019

High thermoelectric figure of merit and thermopower in layered perovskite oxides

We predict high thermoelectric efficiency in the layered perovskite La$_2$Ti$_2$O$_7$, based on calculations (mostly ab-initio) of the electronic structure, transport coefficients, and thermal conductivity in a wide temperature range. The figure of merit $ZT$ computed with a temperature-dependent relaxation time increases monotonically from just above 1 at room temperature to over 2.5 at 1200 K, at an optimal carrier density of around 10$^{20}$ cm$^{-3}$. The Seebeck thermopower coefficient is between 200 and 300 $μ$V/K at optimal doping, but can reach nearly 1 mV/K at low doping. Much of the potential of this material is due to its lattice thermal conductivity of order 1 W/(K m); using a model based on ab initio anharmonic calculations, we interpret this low value as due to effective phonon confinement within the layered-structure blocks.

cond-mat.mtrl-sci↗

arXiv2018

Theory of thermoelectricity in Mg$_3$Sb$_2$ with an energy- and temperature-dependent relaxation time

We study the electronic transport coefficients and the thermoelectric figure of merit ZT in $n$-doped Mg$_3$Sb$_2$ based on density-functional electronic structure and Bloch-Boltzmann transport theory with an energy- and temperature-dependent relaxation time. Both the lattice and electronic thermal conductivities affect the final ZT significantly, hence we include the lattice thermal conductivity calculated ab initio. Where applicable, our results are in good agreement with existing experiments, thanks to the treatment of lattice thermal conductivity and the improved description of electronic scattering. ZT increases monotonically in our T range (300 to 700 K), reaching a value of 1.6 at 700 K; it peaks as a function of doping at about 3$\times$10$^{19}$ cm$^{-3}$. At this doping, ZT$>$1 for T$>$500 K.

cond-mat.mtrl-sci↗

arXiv2018

Ab initio thermal conductivity of thermoelectric Mg$_3$Sb$_2$: evidence for dominant extrinsic effects

The lattice thermal conductivity of the candidate thermoelectric material Mg$_3$Sb$_2$ is studied from first principles, with the inclusion of anharmonic, isotope, and boundary scattering processes, and via an accurate solution of the Boltzmann equation. We find that the anomalously low observed conductivity is due to grain-boundary scattering of phonons, whereas the purely anharmonic conductivity is an order of magnitude larger. Mass disorder due to alloying and off-stoichiometry is also found to contribute significantly to its decrease. Combining ab initio values vs sample size with measured grain-size distributions, we obtain an estimate of $κ$ vs T in nano-polycrystalline material in good agreement with typical experiments, and compute the ZT figure of merit in the various cases.

cond-mat.mtrl-sci↗

arXiv2015

Phase diagram and polarization of stable phases of (Ga$_{1-x}$In$_x$)$_2$O$_3$

Using density-functional ab initio calculations, we provide a revised phase diagram of (Ga$_{1-x}$In$_{x})_2$O$_3$. Three phases --monoclinic, hexagonal, cubic bixbyite-- compete for the ground state. In particular, in the $x$$\sim$0.5 region we expect coexistence of hexagonal, $β$, and bixbyite (the latter separating into binary components). Over the whole $x$ range, mixing occurs in three disconnected regions, and non-mixing in two additional distinct regions. We then explore the permanent polarization of the various phases, finding that none of them is polar at any concentration, despite the possible symmetry reductions induced by alloying. On the other hand, we find that the $\varepsilon$ phase of Ga$_2$O$_3$ stabilized in recent growth experiments is pyroelectric --i.e. locked in a non-switchable polarized structure-- with ferroelectric-grade polarization and respectable piezoelectric coupling. We suggest that this phase could be used profitably to produce high-density electron gases in transistor structures.

cond-mat.mtrl-sci↗

arXiv2015

Properties of (Ga$_{1-x}$In$_x$)$_2$O$_3$ over the whole $x$ range

Using density-functional ab initio theoretical techniques, we study (Ga$_{1-x}$In$_x$)$_2$O$_3$ in both its equilibrium structures (monoclinic $β$ and bixbyite) and over the whole range of composition. We establish that the alloy exhibits a large and temperature-independent miscibility gap. On the low-$x$ side, the favored phase is isostructural with $β$-Ga$_2$O$_3$; on the high-$x$ side, it is isostructural with bixbyite In$_2$O$_3$. The miscibility gap opens between approximately 15\% and 55\% In content for the bixbyite alloy grown epitaxially on In$_2$O$_3$, and 15\% and 85\% In content for the free-standing bixbyite alloy. The gap, volume and band offsets to the parent compound also exhibit anomalies as function of $x$. Specifically, the offsets in epitaxial conditions are predominantly type-B staggered, but have opposite signs in the two end-of-range phases.

cond-mat.mtrl-sci↗

arXiv2014

Low In solubility and band offsets in the small-$x$ $β$-Ga$_2$O$_3$/(Ga$_{1-x}$In$_x$)$_2$O$_3$ system

Based on first-principles calculations, we show that the maximum reachable concentration $x$ in the (Ga$_{1-x}$In$_x$)$_2$O$_3$ alloy in the low-$x$ regime (i.e. In solubility in $β$-Ga$_2$O$_3$) is around 10%. We then calculate the band alignment at the (100) interface between $β$-Ga$_2$O$_3$ and (Ga$_{1-x}$In$_x$)$_2$O$_3$ at 12%, the nearest computationally treatable concentration. The alignment is strongly strain-dependent: it is of type-B staggered when the alloy is epitaxial on Ga$_2$O$_3$, and type-A straddling in a free-standing superlattice. Our results suggest a limited range of applicability of low-In-content GaInO alloys.

cond-mat.mtrl-sci↗