arXiv subjects

Maria C. Asensio

Publications and source records attributed to Maria C. Asensio.

14 recordsLinked to original sources

arXiv2025

Spatial Control of Charge Doping in n-Type Topological Insulators

Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H$_2$O on Bi$_2$X$_3$ decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.

cond-mat.mes-hall↗

arXiv2023

Data augmentation for battery materials using lattice scaling

A significant step forward in Lithium-ion batteries (LIBs) developments can only be achieved by proposing mold-breaking research based on selecting the best materials for the cell components, optimizing cell manufacture, anticipating the degradation mechanisms of the LIBs, and consolidating the regeneration processes of damaged batteries. LIBs with longer recycling life, better safety, and the ability to be reused will establish sustainable state-of-the-art batteries with maximum energy efficiency, low costs, and minimal CO2 emissions within a circular economy, promoting sustainability in areas as relevant as electromobility and portable electronics. Recently, there has been increasing interest in applying Artificial Intelligence (AI) techniques and their subclasses to better predict novel materials with designed properties. This collection of methods has already obtained considerable success, having been used to predict numerous physical properties of materials. However, compared to other fields, the materials data are typically much smaller and sometimes more diverse, which undoubtedly affects the construction and effectiveness of AI models. At present, several Data Augmentation (DA) methods have been proposed in materials science based on flipping, rotating, and distorting the unit cells of materials, which have been demonstrated to be very efficient in increasing the size and quality of data. Here we present an even more effective new method of Data Augmentation based on the lattice scaling of crystal structures. In the lattice scaling DA method, the unit cell is perturbed, undergoing an increase and decrease of the unit cell volume in an isotropic or anisotropic way. This transformation is particularly pertinent for battery components since volume changes of up to 5% have been reported for the insertion-based LIBs during cycling.

cond-mat.mtrl-sci↗

arXiv2022

Donor-acceptor discrete optical emission in 2D perovskites

Two-dimensional (2D) van der Waals nanomaterials have attracted considerable attention for potential use in photonic and optoelectronic applications in the nanoscale, due to their outstanding electrical and optical properties, differing from their bulk state. Currently, 2D perovskite belonging to this group of nanomaterials is widely studied for a wide range of optoelectronic applications. Thanks to their excitonic properties, 2D perovskites are also promising materials for photonics and nonlinear devices working at room temperature. Nevertheless, strong excitonic effects can reduce the photocurrent characteristics when using thinner perovskites phases. In this work, we present solid experimental evidence for the presence of single donor-acceptor pair optical transitions in 2D Lead Halide Perovskites, characterized by sub meV linewidths ($\simeq 120 μeV$) and long decay times (5-8 ns). Micro-photoluminescence evidence is supported by detailed Photoemission measurements, and a model simulation. The association of Phenethylammonium with Methylammonium cations, the latter molecule being only present in 2D Halide Perovskites with thicker phases $n \geq 2$, has been identified as the source of the donor-acceptor pair formation, corresponding to the displacement of lead atoms and their replacement by methylamonium. Our seminal study of discrete Donor-Acceptor Pair (DAP) sharp and bright optical transitions in 2D Lead Halide Perovskites opens new routes to implement DAP as the carrier sources for novel designs of optoelectronic devices with 2D perovskites, and will foster the development of future outstanding properties in non-linear quantum technologies.

cond-mat.mes-hall↗

arXiv2021

Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy

Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. Here by using nanometer- and micrometer-spot angle-resolved photoemission spectroscopies (NanoARPES and MicroARPES), we reveal the spatially-resolved electronic structure in the stripe phase of IrTe$_2$. Each separated domain shows two-fold symmetric electronic structure with the mirror axis aligned along 3 equivalent directions, and 6$\times$1 replicas are clearly identified. Moreover, such electronic structure inhomogeneity disappears across the stripe phase transition, suggesting that electronic phase with broken symmetry induced by the 6$\times$1 modulation is directly related to the stripe phase transition of IrTe$_2$. Our work demonstrates the capability of NanoARPES and MicroARPES in elucidating the fundamental physics of phase-separated materials.

cond-mat.mes-hall↗

arXiv2018

Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or magnetic orders. Clean experimental band structure measurements of ABC stacked specimens are missing because the samples are usually too small in size. Here, we directly image the band structure of large multilayer graphene flake containing approximately 14 consecutive ABC layers. Angle-resolved photoemission spectroscopy experiments reveal the flat electronic bands near the K point extends by 0.13 Å-1 at the Fermi level at liquid nitrogen temperature. First-principle calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV.

cond-mat.mtrl-sci↗

arXiv2018

Quasicrystalline 30° Twisted Bilayer Graphene as an Incommensurate Superlattice with Strong Interlayer Coupling

The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in analogy to quasicrystals) are not only rare in nature, but also the interlayer interaction has often been assumed to be negligible due to the lack of phase coherence. Here we report the successful growth of quasicrystalline 30° twisted bilayer graphene (30°-tBLG) which is stabilized by the Pt(111) substrate, and reveal its electronic structure. The 30°-tBLG is confirmed by low energy electron diffraction and the intervalley double-resonance Raman mode at 1383 cm$^{-1}$. Moreover, the emergence of mirrored Dirac cones inside the Brillouin zone of each graphene layer and a gap opening at the zone boundary suggest that these two graphene layers are coupled via a generalized Umklapp scattering mechanism, i.e. scattering of Dirac cone in one graphene layer by the reciprocal lattice vector of the other graphene layer. Our work highlights the important role of interlayer coupling in incommensurate quasicrystalline superlattices, thereby extending band structure engineering to incommensurate superstructures.

cond-mat.mtrl-sci↗

arXiv2018

Black Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy

Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between within the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Herein, we report a rare chemical form of arsenic, called black-arsenic (b-As), as an extremely anisotropic layered semiconductor. We have performed systematic characterization on the structural, electronic, thermal and electrical properties of b-As single crystals, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). Our analysis shows that b-As exhibits higher or comparable electronic, thermal and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies are able to potentially implement novel ideas for scientific research and device applications.

cond-mat.mtrl-sci↗

arXiv2017

Emergence of Frohlich polaron from interlayer electron-phonon coupling in van der Waals heterostructure

Van der Waals heterostructures, vertical stacks of layered materials, offer newopportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-BN valence band maxima, with energy spacing coincident with the highest phonon energy of the heterostructure|an indication of Frohlich polaron formation due to forward scattering electron-phonon coupling. Parabolic fitting of the h-BN bands yields an effective mass enhancement of ~ 2.3, suggesting an intermediate coupling strength. Our theoretical simulations based on Migdal-Eliashberg theory corroborate the experimental results, allowing the extraction of microscopic physical parameters. Moreover,renormalisation of graphene $π$ band is observed due to the hybridisation with the h-BN band. Our work generalises the polaron study from transition metal oxides to Van derWaals heterostructures with higher material exibility, highlighting interlayer coupling as an extra degree of freedom to explore emergent phenomena.

cond-mat.mes-hall↗

arXiv2017

Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy

The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar interaction. However, the degree of inter-layer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. We present a direct determination of the valence band structure of bulk ReS$_2$ using high resolution angle resolved photoemission spectroscopy (ARPES). We find a clear in-plane anisotropy due to the presence of chains of Re atoms, with a strongly directional effective mass which is larger in the direction orthogonal to the Re chains (2.2 $m_e$) than along them (1.6 $m_e$), in good agreement with density functional theory calculations. An appreciable inter-plane interaction results in an experimentally-measured difference of ~100-200 meV between the valence band maxima at the Z point (0,0,1/2) and the $Γ$ point (0,0,0) of the three-dimensional Brillouin zone. This leads to a direct gap at Z and a close-lying but larger gap at $Γ$, implying that bulk ReS2 is marginally indirect. This may account for recent conflicting transport and photoluminescence measurements and the resulting uncertainty about the direct or indirect gap nature of this material.

cond-mat.mtrl-sci↗

arXiv2017

Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy

ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. We find a highly anisotropic in- and out-of-plane electronic structure, with the valence band maxima located away from any particular high-symmetry direction. The effective mass doubles its value perpendicular to the Re chains and the interlayer van der Waals coupling generates significant electronic dispersion normal to the layers. Our density functional theory calculations, including spin-orbit effects, are in excellent agreement with these experimental findings.

cond-mat.mes-hall↗

arXiv2017

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (um or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here by using ARPES with nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings.

cond-mat.mtrl-sci↗

arXiv2017

Angle resolved photoemission spectroscopy reveals spin charge separation in metallic MoSe2 grain boundary

Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density wave transition, whose periodicity is given by kF/π, consistent with scanning tunneling microscopy and angle resolved photoemission measurements. Most importantly, we provide evidence for spin- and charge-separation, the hallmark of one-dimensional quantum liquids. Our studies show that the spectral line splits into distinctive spinon and holon excitations whose dispersions exactly follow the energy-momentum dependence calculated by a Hubbard model with suitable finite-range interactions. Our results also imply that quantum wires and junctions can be isolated in line defects of other transition metal dichalcogenides, which may enable quantum transport measurements and devices.

cond-mat.str-el↗

arXiv2012

ANTARES, a scanning photoemission microscopy beamline at SOLEIL

As one of the latest beamline built at the SOLEIL synchrotron source, ANTARES beamline offers a spectroscopic non-destructive nano-probe to study advanced materials. This innovative scanning photoemission microscopy combines linear and angle sweeps to perform precise electronic band structure determination by Nano Angle Resolved Photoelectron Spectroscopy (nanoARPES) and chemical imaging by core level detection. The beamline integrates effectively insertion devices and a high transmission beamline optics. This photon source has been combined with an advanced microscope, which has precise sample handling abilities. Moreover, it is fully compatible with a high resolution R4000 Scienta hemispherical analyzer and a set of Fresnel Zone Plates (FZP) able to focalize the beam spot up to a few tenths of nanometers, depending on the spatial resolution of the selected FZP. We present here the main conceptual design of the beamline and endstation, together with some of the firsts commissioning results.

physics.ins-det↗

arXiv2012

A chemical imaging and Nano-ARPES study of well-ordered thermally reduced SrTiO3(100)

The structural and electronic properties of thermally reduced SrTiO3(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of Scanning Photoemission Microscopy and Angle Resolved Photoelectron Spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the chemical composition of samples which present reproducible and suitable low-energy electron diffraction patterns after following well-established thermal reduction protocols. At the micrometric scale, Ca-rich areas have been directly imaged using high-energy resolution core level photoemission. Moreover, we have monitored the effect of Ca segregation on different features of the SrTiO3(100) electronic band structure, measuring ARPES inside, outside and at the interface of surface inhomogeneities with the identified Ca-rich areas. In particular, the interaction of Ca with the well-known intragap localized state, previously attributed to oxygen vacancies, has been investigated. Moreover, the combination of direct imaging and spectroscopic techniques with high spatial resolution has clarified the long-standing dilemma related to the bulk or surface character of Ca segregation in SrTiO3. Our results present solid evidence that the penetration depth of Ca segregation is very small. In contrast to what has been previously proposed, the origin of long-range surface reconstructions can unlikely be associated to Ca due to strong local variations of its surface concentration.

cond-mat.mtrl-sci↗