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Maria H. Visscher

Publications and source records attributed to Maria H. Visscher.

2 recordsLinked to original sources

Disentangling bulk and surface electronic structure using targeted cleave planes in RuO$_2$

Rutile RuO$_2$ has attracted significant interest due to its putative unconventional electronic and magnetic properties and its proximity to superconductivity. However, the measurement and interpretation of its electronic structure has been complicated by a strongly three-dimensional crystal structure. Here, we demonstrate how the preparation of targeted $(110)$ and $(100)$ surfaces via focused ion beam (FIB)-engineered cleaving allows the acquisition of high-quality measurements of the electronic structure using angle-resolved photoemission spectroscopy. Our results demonstrate that ARPES spectra of RuO$_2$ are, in fact, largely dominated by signatures of distinct surface electronic states. From comparison with density-functional theory, we resolve a surface termination-dependent variation of these, and disentangle them from highly-three-dimensional bulk states and surface resonances. Moreover, we find a marked role of the substantial spin-orbit coupling of the Ru 4$d$ orbitals in the surface region, where a breaking of spatial inversion symmetry leads to significant Rashba-type spin splittings of the surface bands.

cond-mat.str-el

Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe$_2$

TiSe$_2$ has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically be expected, while a lack of "smoking-gun" signatures for the importance of the electron-hole interaction in driving the phase transition has rendered it challenging to distinguish the EI from the conventional charge-density-wave (CDW) phase. Here, we demonstrate a new approach, exploiting the susceptibility of excitons to dielectric screening. We combine mechanical exfoliation with molecular-beam epitaxy to fabricate ultra-clean van der Waals heterostructures of monolayer (ML-)TiSe$_2$/graphite and ML-TiSe$_2$/hBN. We observe how the modified substrate screening environment drives a renormalisation of the quasi-particle band gap of the TiSe$_2$ layer, signifying its susceptibility to Coloumb engineering. The temperature-dependent evolution of its electronic structure, however, remains unaffected, indicating that excitons are not required to drive the CDW transition in TiSe$_2$.

cond-mat.mtrl-sci