arXiv subjects

Marika Schleberger

Publications and source records attributed to Marika Schleberger.

At least 37 records · Page 2Linked to original sources

arXiv2019

Molybdenum Disulphide Nanoflakes Grown by Chemical Vapour Deposition on Graphite: Nucleation, Orientation, and Charge Transfer

Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimentally and by density-functional-theory calculations, that molybdenum disulphide flakes grow in two orientations. One of the orientations is energetically preferred, the other one is rotated by 30 degree. Because of a high energy barrier confirmed by our calculations both orientations are stable at room temperature and their switching can only be forced by external stimuli, i.e. by a scanning tunneling microscope tip. Combined Kelvin probe microscopy and Raman spectroscopy measurements show that the flakes with a typical size of a few hundred nanometers are less doped than the often studied exfoliated molybdenum disulphide single layer.

cond-mat.mtrl-sci↗

arXiv2019

Perforating freestanding molybdenum disulfide monolayers with highly charged ions

Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.

cond-mat.mtrl-sci↗

arXiv2018

Tunable quantum interference in bilayer graphene in double-resonant Raman scattering

The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-resonant Raman scattering processes in bilayer graphene on the electronic broadening parameter $γ$. We demonstrate that the ratio between symmetric and anti-symmetric scattering processes sensitively depends on the lifetime of the electronic states, explaining the experimentally observed variation of the complex $2D$-mode line shape.

cond-mat.mes-hall↗

arXiv2017

Hysteresis in the transfer characteristics of MoS2 transistors

We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trapping, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.

cond-mat.mes-hall↗

arXiv2017

Monitoring ion track formation using in situ RBS/c and ERDA

The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2 and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged.

cond-mat.mtrl-sci↗

arXiv2017

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10^4 s, due to photo-charge trapping at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 kΩ/μm, ON current as high as 1.25 nA/μm, 10^5 ON-OFF ratio, mobility of 1 cm^2/Vs and photoresponsivity R=1 A/W.

cond-mat.mes-hall↗

arXiv2016

On the threshold of ion track formation in CaF2

There is ongoing debate regarding the mechanism of swift heavy ion track formation in CaF2. The objective of this study is to shed light on this important topic using a range of complimentary experimental techniques. Evidence of the threshold for ion track formation being below 3 keV/nm is provided by both transmission electron microscopy and Rutherford backscattering spectroscopy in the channeling mode which has direct consequences for the validity of models describing the response of CaF2 to swift heavy ion irradiation. Advances in the TEM and RBS/c analyses presented here pave the way for better understanding of the ion track formation.

cond-mat.mtrl-sci↗

arXiv2015

SHIPS: A new setup for the investigation of swift heavy ion induced particle emission and surface modifications

The irradiation with fast ions with kinetic energies of > 10 MeV leads to the deposition of a high amount of energy along their trajectory (up to several ten keV/nm). The energy is mainly transferred to the electronic subsystem and induces different secondary processes of excitations which result in significant material modifications. A new setup to study these ion induced effects on surfaces will be described in this paper. The setup combines a variable irradiation chamber with different techniques of surface characterizations like scanning probe microscopy, time-of-flight secondary ion and neutral mass spectrometry, as well as low energy electron diffraction under ultra high vacuum conditions, and is mounted at a beamline of the universal linear accelerator (UNILAC) of the GSI facility in Darmstadt, Germany. Here, samples can be irradiated with high-energy ions with a total kinetic energy up to several GeVs under different angles of incidence. Our setup enables the preparation and in-situ analysis of different types of sample systems ranging from metals to insulators. Time-of-flight secondary ion mass spectrometry enables us to study the chemical composition of the surface, while scanning probe microscopy allows a detailed view into the local electrical and morphological conditions of the sample surface down to atomic scales. With the new setup particle emission during irradiation as well as persistent modifications of the surface after irradiation can thus be studied. We present first data obtained with the new setup, including a novel measuring protocol for time-of-flight mass spectrometry with the GSI UNILAC accelerator.

physics.ins-det↗

arXiv2015

Splitting of the monolayer out-of-plane A'1 Raman mode in few-layer WS2

We present Raman measurements of mono- and few-layer WS2. We study the monolayer A'1 mode around 420 cm(-1) and its evolution with the number of layers. We show that with increasing layer number there is an increasing number of possible vibrational patterns for the out-of-plane Raman mode: in N-layer WS2 there are N Gamma-point phonons evolving from the A'1 monolayer mode. For an excitation energy close to resonance with the excitonic transition energy we were able to observe all of these N components, irrespective of their Raman activity. Density functional theory calculations support the experimental findings and make it possible to attribute the modes to their respective symmetries. The findings described here are of general importance for all other phonon modes in WS2 and other layered transition metal dichalcogenide systems in the few layer regime.

cond-mat.mes-hall↗

arXiv2014

Double-resonant LA phonon scattering in defective graphene and carbon nanotubes

We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal acoustic (LA) phonons with defects. We investigate its dependence on laser excitation energy, on the number of graphene layers and on the carbon nanotube diameter. We assign this Raman mode to so-called 'inner' processes with resonant phonons mainly from the $Γ-K$ high-symmetry direction. The asymmetry of the $D''$ mode is explained by additional contributions from phonons next to the $Γ-K$ line. Our results demonstrate the importance of inner contributions in the double-resonance scattering process and add a fast method to investigate acoustic phonons in graphene and carbon nanotubes by optical spectroscopy.

cond-mat.mtrl-sci↗

arXiv2014

Photoluminescence of freestanding single- and few-layer MoS2

We present a photoluminescence study of freestanding and Si/SiO2 supported single- and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The photoluminescence of supported single-layer MoS2 is instead originating from the A- (trion) peak as the MoS2 is n-type doped from the substrate. In bilayer MoS2, the van der Waals interaction with the substrate is decreasing the indirect band gap energy by up to ~ 80 meV. Furthermore, the photoluminescence spectra of suspended MoS2 can be influenced by interference effects.

cond-mat.mtrl-sci↗

arXiv2009

Energy threshold for nanodot creation by swift heavy ions

We present theoretical and experimental data on the threshold behaviour of nanodot creation with swift heavy ions. A model calculation based on a two-temperature model taking the spatially resolved electron density into account gives a threshold of 12 keV/nm below which the energy density at the end of the track is no longer high enough to melt the material. In the corresponding experiments we irradiated SrTiO$_3$ surfaces under grazing incidence with swift heavy ions. The resulting chains of nanodots were analyzed by atomic force microscopy. In addition, samples irradiated under normal incidence were analyzed by transmission electron microscopy. Both experiments show two thresholds, connected to the appearance of tracks and to the creation of fully developed tracks, respectively. The threshold values are similar for surface and bulk tracks, suggesting that the same processes occur at glancing and normal incidence. The experimental threshold for the formation of fully developed tracks compares well to the value obtained by the theoretical description.

cond-mat.mtrl-sci↗

arXiv2008

HICS: Highly charged ion collisions with surfaces

The layout of a new instrument designed to study the interaction of highly charged ions with surfaces, which consists of an ion source, a beamline including charge separation and a target chamber, is presented here. By varying the charge state and impact velocity of the projectiles separately, the dissipation of potential and kinetic energy at or below the surface can be studied independently. The target chamber offers the use of tunable metal-insulator-metal devices as detectors for internal electronic excitation, a timeof-flight system to study the impact induced particle emission and the possibility to transfer samples in situ to a UHV scanning probe microscope. Samples and detectors can be prepared in situ as well. As a first example data on graphene layers on SrTiO3 which have been irradiated with Xe36+ are presented. Key words: highly charged ions, sputtering, AFM, graphene

physics.ins-det↗

arXiv2008

Conductive nanodots on the surface of irradiated CaF2

CaF2(111) single crystal surfaces have been irradiated with swift heavy ions under oblique angles resulting in chains of nanosized hillocks. In order to characterize these nanodots with respect to their conductivity we have applied non-contact atomic force microscopy using a magnetic tip. Measurements in UHV as well as under ambient conditions reveal a clearly enhanced electromagnetic interaction between the magnetic tip and the nanodots. The dissipated energy per cycle is comparable to the value found for metals, indicating that the interaction of the ion with the target material leads to the creation of metallic Ca nanodots on the surface.

physics.atom-ph↗

arXiv2008

Distance dependence of the phase signal in eddy current microscopy

Atomic force microscopy using a magnetic tip is a promising tool for investigating conductivity on the nano-scale. By the oscillating magnetic tip eddy currents are induced in the conducting parts of the sample which can be detected in the phase signal of the cantilever. However, the origin of the phase signal is still controversial because theoretical calculations using a monopole appoximation for taking the electromagnetic forces acting on the tip into account yield an effect which is too small by more than two orders of magnitude. In order to determine the origin of the signal we used especially prepared gold nano patterns embedded in a non-conducting polycarbonate matrix and measured the distance dependence of the phase signal. Our data clearly shows that the interacting forces are long ranged and therefore, are likely due to the electromagnetic interaction between the magnetic tip and the conducting parts of the surface. Due to the long range character of the interaction a change in conductivity of $Δσ=4,5\cdot10^{7} (Ω$m$)^{-1}$ can be detected far away from the surface without any interference from the topography.

physics.atom-ph↗

arXiv2008

Temperature dependence of the energy dissipation in dynamic force microscopy

The dissipation of energy in dynamic force microscopy is usually described in terms of an adhesion hysteresis mechanism. This mechanism should become less efficient with increasing temperature. To verify this prediction we have measured topography and dissipation data with dynamic force microscopy in the temperature range from 100 K up to 300 K. We used 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) grown on KBr(001), both materials exhibiting a strong dissipation signal at large frequency shifts. At room temperature, the energy dissipated into the sample (or tip) is 1.9 eV/cycle for PTCDA and 2.7 eV/cycle for KBr, respectively, and is in good agreement with an adhesion hysteresis mechanism. The energy dissipation over the PTCDA surface decreases with increasing temperature yielding a negative temperature coefficient. For the KBr substrate, we find the opposite behaviour: an increase of dissipated energy with increasing temperature. While the negative temperature coefficient in case of PTCDA agrees rather well with the adhesion hysteresis model, the positive slope found for KBr points to a hitherto unknown dissipation mechanism.

physics.atom-ph↗

arXiv2008

Swift heavy ion irradiation of SrTiO$_3$ under grazing incidence

The irradiation of SrTiO$_3$ single crystals with swift heavy ions leads to modifications of the surface. The details of the morphology of these modifications depends strongly on the angle of incidence and can be characterized by atomic force microscopy. At glancing angles, discontinuous chains of nanosized hillocks appear on the surface. The latent track radius can be determined from the variation of the length of the chains with the angle of incidence. This radius is material specific and allows the calculation of the electron-phonon-coupling constant for SrTiO$_3$. We show that a theoretical description of the nanodot creation is possible within a two-temperature model if the spatial electron density is taken into account. The appearance of discontinuous features can be explained easily within this model, but it turns out that the electronic excitation dissipates on a femtosecond time scale and thus too rapidly to feed sufficient energy into the phonon system in order to induce a thermal melting process. We demonstrate that this can be solved if the temperature dependent diffusion coefficient is introduced into the model.

cond-mat.mtrl-sci↗

arXiv2007

Hot electrons induced by (rather) cold ions

Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of potential energy of multiply charged ions impinging on a polycrystalline metal surface. The ion-metal interaction leads to excited electrons and holes within the top layer. A substantial fraction of these charge carriers is transported inwards and can be measured as an internal current in the thin film tunnel junction. In Ag-AlOX-Al junctions, yields of typically 0.1-1 electrons per impinging ion are detected in the bottom Al layer. The separate effects of potential and kinetic energy on the tunneling yield are investigated by varying the charges state of the Ar projectile ions from 2+ to 9+ for kinetic energies in the range from 1 to 12 keV. The tunneling yield is found to scale linearly with the potential energy of the projectile.

cond-mat.mtrl-sci↗