arXiv subjects

Mario Alia

Publications and source records attributed to Mario Alia.

2 recordsLinked to original sources

arXiv2025

Atomic-scale Origin of Interfacial Dzyaloshinskii--Moriya Interaction in Pt/Fe/Au

Recent results show remarkable interfacial--Dzyaloshinskii--Moriya interaction (i-DMI) in magnetic heterostructures composed of relatively thick Fe thin films ($\gg 1$ nm). To investigate its origin, we present a thorough magnetic characterization of the SiO$_2$/${}^{57}\mathrm{Fe}$($t$)/Au and SiO$_2$/Pt/${}^{57}\mathrm{Fe}$($t$)/Au heterostructures ($t = 1.6$ - $2.2$ nm). An i-DMI constant of $D_s^{\mathrm{Pt}} = 0.43\,\mathrm{mJ\,m^{-2}}$ is extracted for the Pt/Fe/Au system, as probed by wavevector-resolved Brillouin light scattering spectroscopy. Ferromagnetic resonance and conversion electron M\"ossbauer spectroscopy indicate that significant surface anisotropy is present in Pt/Fe/Au, and that an interfacial Fe fraction ($\sim18$) exhibits tilted magnetization ($\sim25^\circ$ out of plane) and an enhanced hyperfine field, correlating with the stronger i-DMI.

cond-mat.mtrl-sci↗

arXiv2021

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length {\lambda}IEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.

cond-mat.mtrl-sci↗