arXiv subjects

Mario Amado

Publications and source records attributed to Mario Amado.

18 recordsLinked to original sources

arXiv2026

Graphene Electric Double-Layer Transistors for Enhanced-Sensitivity Label-Free Detection of Human Serum Albumin

Accurate detection of human serum albumin (HSA) is essential for the early diagnosis and monitoring of renal and hepatic disorders. We present a graphene-based electrolyte-gated field-effect transistor (EGFET) for label-free, real-time quantification of HSA under non-Faradaic operation. Devices exploit the high interfacial capacitance of the electric double layer (EDL) to transduce electrostatic perturbations induced by albumin adsorption into measurable conductance modulation. Negatively charged HSA molecules induce systematic modulation of the graphene channel, producing a concentration-dependent displacement of the Dirac voltage consistent with p-type doping. To establish a molecular-level interpretation of the sensing response, Brownian Dynamics simulations show that HSA adsorbs onto graphene through multiple adsorption orientations associated with heterogeneous interfacial charge distributions and variable dipole alignments relative to the surface. Adsorption is energetically stabilized by van der Waals interactions. Analysis of transfer characteristics across concentrations ranging from 0.01 to 30mgmL-1 reveals a correlation between surface charge density and carrier transport modulation within the electric double layer. Optimized devices exhibit a limit of detection of 0.0087 mg mL-1 and a linear dynamic range extending to 10 mg mL-1. The response remains non-Faradaic under sub-volt operation with reversible and reproducible behavior. The use of an inverse-mobility analytical metric highlights the role of disorder-enhanced carrier scattering in signal amplification, enabling sensitive electrostatic detection while preserving reversible device operation. These results establish liquid-gated graphene EGFETs as a promising platform for quantitative protein sensing and provide insight into disorder-mediated transport mechanisms in graphene bioelectronic devices.

cond-mat.mes-hall↗

arXiv2026

Cubic edge dispersion in a semi-Dirac Chern insulator

Topological edge states in Chern insulators are typically characterized by a linear dispersion relation inherited from the Dirac structure of the bulk Hamiltonian. Here we show that this paradigm can be fundamentally altered in systems with anisotropic semi-Dirac band structures. We introduce a minimal two-band lattice model realizing a semi-Dirac Chern insulator and determine its topological phase diagram analytically. Using a mass-domain-wall approach in a semi-infinite geometry, we derive an explicit expression for the chiral edge states and find that their low-energy dispersion scales cubically with momentum, $E(k)\propto k^3$. Numerical diagonalization of the corresponding tight-binding ribbon confirms the analytical prediction. Our results demonstrate that unconventional bulk band structures can produce qualitatively different boundary excitations, providing a route to engineering nonstandard chiral edge dynamics in topological materials and synthetic quantum systems.

cond-mat.mes-hall↗

arXiv2025

Spin-dependent transport through edge states in 2D semi-Dirac materials with Rashba spin-orbit coupling and band inversion

We investigate the bulk-boundary correspondence in two-dimensional type-I semi-Dirac materials with band inversion and Rashba spin-orbit coupling. Employing a dimensional reduction framework, we identify the Zak phase along the quadratically dispersing direction as a topological invariant that captures the presence of edge states. In the non-trivial topological regime, systems with finite width exhibit energy-dependent edge states that are topologically protected only at specific momenta. At kx equal to zero, symmetry-protected edge states emerge, analogous to the Rashba-free case. At finite kx, the interplay of spin-orbit coupling and band structure gives rise to spin-dependent edge states, localized on specific edges based on its spin and particle-hole character. We compute spin-resolved conductance through these edge channels and observe robust, tunable oscillations attributable to spin precession induced by the effective Rashba magnetic field. These results reveal how spin-orbit interactions enrich the edge physics of semi-Dirac systems and provide a platform for spintronic control in anisotropic topological materials.

cond-mat.mes-hall↗

arXiv2025

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the two-dimensional (2D) limit. Here, we demonstrate that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few-layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature-dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the N\'eel temperature by ~10K. Our experimental results are fully supported by first-principles calculations, which link the observed effects to a strain-driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine-tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices.

cond-mat.mtrl-sci↗

arXiv2024

Superballistic conduction in hydrodynamic antidot graphene superlattices

Viscous electron flow exhibits exotic signatures such as superballistic conduction. In order to observe hydrodynamics effects, a 2D device where the current flow is as inhomogeneous as possible is desirable. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superballistic effect, suggesting the effectiveness of the geometry at bending the electron flow. In addition, superballistic conduction, which is related to a transition from a non-collective to a collective regime of transport, behaves non-monotonically with the magnetic field. We also analyze the device resistance as a function of the size of the antidot superlattice to find characteristic scaling laws describing the different transport regimes. We prove that the antidot superlattice is a convenient geometry for realizing hydrodynamic flow and provide valuable explanations for the technologically relevant effects of superballistic conduction and scaling laws.

cond-mat.mes-hall↗

arXiv2024

High order momentum topological insulator in 2D semi-Dirac materials

Semi-Dirac materials in 2D present an anisotropic dispersion relation, linear along one direction and quadratic along the perpendicular one. This study explores the topological properties and the influence of disorder in a 2D semi-Dirac Hamiltonian. Anisotropic edge states appear only in one direction. Their topological protection can be rigorously founded on the Zak phase of the one-dimensional reduction of the semi-Dirac Hamiltonian, parametrically depending on one of the momenta. In general, only a single value of the momentum is topologically protected so these systems can be considered as high order momentum topological insulators. We explore the dependence on the disorder of the edge states and the robustness of the topological protection in these materials. We also explore the consequences of the high order topological protection in momentum space for the transport properties in a two-terminal configuration.

cond-mat.mes-hall↗

arXiv2022

Effect of the external fields in high Chern number quantum anomalous Hall insulators

A quantum anomalous Hall state with high Chern number has so far been realized in multiplayer structures consisting of alternating magnetic and undoped topological insulator layers. However, in previous proposals, the Chern number can be only tuned by varying the doping concentration or the width of the magnetic topological insulator layers. This drawback largely restrict the applications of dissipationless chiral edge currents in electronics since the number of conducting channels remains fixed. In this work, we propose a way of varying the Chern number at will in these multilayered structures by means of an external electric field applied along the stacking direction. In the presence of an electric field in the stacking direction, the inverted bands of the unbiased structure coalesce and hybridize, generating new inverted bands and collapsing the previously inverted ones. In this way, the number of Chern states can be tuned externally in the sample, without the need of modifying the number and width of the layers or the doping level. We showed that this effect can be uncovered by the variation of the transverse conductance as a function of the electric field at constant injection energy at the Fermi level.

cond-mat.mes-hall↗

arXiv2022

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy

Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material.

cond-mat.mtrl-sci↗

arXiv2022

Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect

Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices.

cond-mat.mes-hall↗

arXiv2020

Topological valley currents via ballistic edge modes in graphene superlattices near the primary Dirac point

Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but below 60 K approaches the value of $h/2e^{2}$ in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 $μ$m. Furthermore, nonlocal transport transmission probabilities based on the Landauer-Büttiker formalism show evidence for spin-degenerate ballistic valley-helical edge modes, which are key for the development of valleytronics

cond-mat.mes-hall↗

arXiv2019

Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2$e^{2}/h$ quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions.

cond-mat.mes-hall↗

arXiv2018

Large spin-mixing conductance in highly Bi-doped Cu thin films

Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In this sense, giant Spin Hall Effect has been recently reported in Cu doped with 0.5 % Bi grown by sputtering and larger values are expected for larger Bi doping, according to first principles calculations. In this work we demonstrate the possibility of doping Cu with up to 10 % of Bi atoms without evidences of Bi surface segregation or cluster formation, as studied by different microscopic and spectroscopic techniques. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures. These results reflects the potentiality of these new materials in spintronics devices.

cond-mat.mtrl-sci↗

arXiv2018

Synthetic antiferromagnetic coupling between ultra-thin insulating garnets

The use of magnetic insulators is attracting a lot of interest due to a rich variety of spin-dependent phenomena with potential applications to spintronic devices. Here we report ultra-thin yttrium iron garnet (YIG) / gadolinium iron garnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG). From spin Hall magnetoresistance (SMR) and X-ray magnetic circular dichroism measurements, we show that the YIG and GdIG magnetically couple antiparallel even in moderate in-plane magnetic fields. The results demonstrate an all-insulating equivalent of a synthetic antiferromagnet in a garnet-based thin film heterostructure and could open new venues for insulators in magnetic devices. As an example, we demonstrate a memory element with orthogonal magnetization switching that can be read by SMR.

cond-mat.mtrl-sci↗

arXiv2018

Radio-frequency capacitive gate-based sensing

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $μ$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $μ$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.

physics.app-ph↗

arXiv2017

Magnetization-control and transfer of spin-polarized Cooper pairs into a half-metal manganite

The pairing state and critical temperature (T$_c$) of a thin s-wave superconductor (S) on two or more ferromagnets (F) are controllable through the magnetization-alignment of the F layers. Magnetization misalignment can lead to spin-polarized triplet pair creation, and since such triplets are compatible with spin-polarized materials they are able to pass deeply into the F layers and so, cause a decrease in T$_c$. Various experiments on S/F$_1$/F$_2$ "triplet spin-valves" have been performed with the most pronounced suppression of T$_c$ reported in devices containing the half-metal ferromagnet (HMF) CrO$_2$ (F$_2$) albeit using out-of-plane magnetic fields to tune magnetic non-collinearity [Singh et al., Phys. Rev. X 5, 021019 (2015)]. Routine transfer of spin-polarized triplets to HMFs is a major goal for superconducting spintronics so as to maximize triplet-state spin-polarization. However, CrO$_2$ is chemically unstable and out-of-plane fields are undesirable for superconductivity. Here, we demonstrate magnetization-tuneable pair conversion and transfer of spin-polarized triplet pairs to the chemically stable mixed valence manganite La$_{2/3}$Ca$_{1/3}$MnO$_3$ in a pseudo spin-valve device using in-plane magnetic fields. The results match microscopic theory and offer full control over the pairing state.

cond-mat.supr-con↗

arXiv2017

p-wave triggered superconductivity in single layer graphene on an electron-doped oxide superconductor

Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing single layer graphene on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in single layer graphene. The realization of unconventional superconductivity in single layer graphene offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.

cond-mat.supr-con↗

arXiv2016

Intrinsic Paramagnetic Meissner Effect due to s-wave Odd-Frequency Superconductivity

In 1933, Meissner and Ochsenfeld reported the expulsion of magnetic flux, the diamagnetic Meissner effect, from the interior of superconducting lead. This discovery was crucial in formulating the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In exotic superconducting systems BCS theory does not strictly apply. A classical example is a superconductor-magnet hybrid system where magnetic ordering breaks time-reversal symmetry of the superconducting condensate and results in the stabilisation of an odd-frequency superconducting state. It has been predicted that under appropriate conditions, odd-frequency superconductivity should manifest in the Meissner state as fluctuations in the sign of the magnetic susceptibility meaning that the superconductivity can either repel (diamagnetic) or attract (paramagnetic) external magnetic flux. Here we report local probe measurements of faint magnetic fields in a Au/Ho/Nb trilayer system using low energy muons, where antiferromagnetic Ho (4.5 nm) breaks time-reversal symmetry of the proximity induced pair correlations in Au. From depth-resolved measurements below the superconducting transition of Nb we observe a local enhancement of the magnetic field in Au that exceeds the externally applied field, thus proving the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state.

cond-mat.supr-con↗

arXiv2012

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices.

cond-mat.mes-hall↗